• Industrial Engineering and Management Systems
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• v.15 no.3
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• pp.268-277
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• 2016

Load balancing is a significant technique to prolong a network's lifetime in sensor network. This paper introduces a hybrid approach named as Load Distributing Hybrid Routing Protocol (LDHRP) composed with a border node routing protocol (BDRP) and greedy forwarding (GF) strategy which will make the routing effective, especially in mobility scenarios. In an existing solution, because of the high network complexity, the data delivery latency increases. To overcome this limitation, a new approach is proposed in which the source node transmits the data to its respective destination via border nodes or greedily until the complete data is transmitted. In this way, the whole load of a network is evenly distributed among the participating nodes. However, border node is mainly responsible in aggregating data from the source and further forwards it to mobile sink; so there will be fewer chances of energy expenditure in the network. In addition to this, number of hop counts while transmitting the data will be reduced as compared to the existing solutions HRLBP and ZRP. From the simulation results, we conclude that proposed approach outperforms well than existing solutions in terms including end-to-end delay, packet loss rate and so on and thus guarantees enhancement in lifetime.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1376-1382
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• 2016

The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.353-356
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• 2010

InSb thin films with a thickness of approximately 300 nm were prepared using single- and double-source vacuum evaporation methods and their structures and properties were investigated in terms of a heat treatment procedure. The double-source InSb films, prepared by the alternate stacking of In and Sb, were polycrystalline in structure and included small amounts of unreacted In and Sb phases. After annealing at elevated temperatures below the melting point of InSb (525$^{\circ}C$), the films changed into the InSb phase and were found to contain small amounts of unreacted In. The formation capability of the InSb compound was slightly lower for multilayer films than for single-layer films. The electrical and galvanomagnetic properties were found to be strongly related to the microstructures of the films. The maximum value of the Hall mobility and the magnetoresistance were determined to be $4.3{\times}10^3cm^2$/Vs and 70%, respectively, for the single-layer films, while these values for the alternately stacked films were respectively $2.9{\times}10^3cm^2$/Vs and 29% for the $[Sb(2.5)/In(2.5)]_{60}$ films, and $3.1{\times}10^3cm^2$/Vs and 10% for the $[Sb(150)/In(150)]_1$ films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.11A
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• pp.1034-1042
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• 2008

It is very hard, but important to sustain path stability for a reliable communication in mobile ad hoc networks. We propose a novel source routing protocol that establishes a group path with virtual multiple paths to enable a robust communication. The entire mobile nodes form a disjoint set of clusters: Each has its clusterhead as a cluster leader and a unique cluster label to identify itself from other clusters. A group path is a sequence of cluster labels instead of nodes and the nodes with the same label collaborate to deliver packets to a node with next label on the group path. We prove by resorting to simulation that our proposed protocol outperforms the existing key routing protocols, even for a network with a high node mobility and a high traffic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.835-843
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• 2008

We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

• Korean Journal of Soil Science and Fertilizer
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• v.38 no.5
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• pp.259-268
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• 2005

Most of the tailings have been left without any management in their mines and have become the main source of serious environmental problems in nearby groundwater, stream and cultivated lands. To compare fractionation and potential mobility of heavy metals in tailings and paddy soils near abandoned 10-metalliferous mines in Korea, the distribution and chemical fractions of heavy metal and their mobility in relation to chemical compositions were investigated. The pollution index of heavy metal in mine tailing calculated with the permissible levels were in the order Cheongyang>Dogok>Beutdeun>Baegwoul mine, which were considered sufficient to raise environmental problems. The rates of 0.1M-HCl extractable Cd, Cu, Pb, Zn, and Ni to total content in paddy soils were 49.1, 50.7, 26.8, 18.4 and 2.9%, respectively, and their rates of heavy metals in paddy soils were higher than that of mine tailing. Dominant chemical forms of heavy metals in tailings were sulfide and residual form (63-91%), specially, the exchangeable portion of Cd (21%) was relatively higher than that of other metals in paddy soils. The mobility factor of heavy metals in tailings and paddy soils was in the order Cd>Zn>Cu>Pb, and the mobility factor in tailing varied considerably among the mines. The potential mobility of heavy metals in tailings showed significant positive correlation with water-soluble $Al^{3+}$ and $Fe^{3+}$ contents, while in paddy soils, it correlated negatively with soil pH values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.323-324
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• 2009

We investigated the electrical properties of tris-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistors (OTFTs) employing Ni/Ag source/drain electrodes. The gap height between the gate insulator and S/D electrode was controlled by changing the thickness of Ag under-layer(20, 30, 40 and 50nm). After evaporating the Ni under-layer, TIPS pentacene channel material was dropping the gap between the gate insulator and SID electrodes. The electrical proprieties of OTFT such as filed-effect mobility, on/off ratio, threshold voltage and subthreshold slope were significantly influenced by the gap height.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2005.11a
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• pp.403-408
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• 2005

다단계 호핑(multi-hop) 무선 센서네트워크의 라우팅 경로를 설정하는데 있어서 데이터 전송의 요구가 있는 경우에만 경로를 만드는 Demand-Driven 방식의 대표적인 방법이 DSR(Dynamic Source Routing)인데 라우트 레코드를 패킷에 실어 보내기 때문에 이 또한 센서노드들의 수가 많아질수록 패킷이 무거워질 수밖에 없다. 본 논문에서는 DSR 프로토콜을 기반 하면서도 라우팅 테이블을 적절히 이용하여 노드 수 증가에 대해 고정된 패킷크기를 가지도록 하였으며 라우팅 비용함수를 적용하여 각 센서노드들의 전원 소모량, 이동성(Mobility), 네트워크 내에서의 Traffic, 거리(Hop) 등을 복합적으로 고려한 안정적이고 신뢰성 있는 최적의 라우팅 설정 알고리즘을 제안한다.