• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.641-644
• /
• 2009

We demonstrated a solvent-assisted soft-lithographic patterning method for producing patterned structure and patterned ordering with lyotropic liquid crystalline polymer (LCP) film. Experimental results showed that the liquid crystalline ordering of lyotropic film could be controlled by shearing effects of the fluidic solvent though the patterned mold channels. In this work, two types of lyotropic LCPs were used to investigate the effects of the alkyl chain length of the lyotropic LCP on producing liquid crystalline ordering through the solvent-assisted fluidic patterning.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.12 no.1
• /
• pp.72-77
• /
• 2019

The display that provides information to us through the visual sense is a very important information transmission means by intuitively transmitting information, and the liquid crystal display (LCD) is the most widely used information transmission display. In this paper, we studied solvent assisted micromolding as an alternative for the rubbing that is essential to align the liquid crystals in LCD and successfully aligned the liquid crystal molecules by constructing the nanostructures on conventional polyimide alignment layer. When generating the nanostructures on the polyimide film, there was a competitive correlation between the dissolution effect of the polymer by the solvent and the capillary effect of the polyimide molecules into the nanostructures of the mold depending on the process temperature. It was possible to form nanostructures with high step by deriving the optimum temperature. These nanostructures were able to align the liquid crystal molecules uniformly and demonstrated that they could form a desirable pretilt angle.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.410.1-410.1
• /
• 2014

A soft-lithographic top-down approach is combined with an epitaxial layer transfer process to fabricate high quality III-V compound semiconductor nanowires (NWs) and integrate them on Si/SiO2 substrates, using MBE-grown ultrathin InAs as a source wafer. The channel width of the InAs nanowires is controlled by using solvent-assisted nanoscale embossing (SANE), descumming, and etching processes. By optimizing these processes, the NW width is scaled to less than 50 nm, and the InAs NWFETs has ${\sim}1,600cm^2/Vs$ peak electron mobility, which indicates no mobility degradation due to the size.