• 제목/요약/키워드: Solution-process

검색결과 7,468건 처리시간 0.037초

반도체 제조공정의 폐수슬러지로 합성된 Hydroxyapatite를 이용한 인산이온의 흡착 (The Adsorption of Phosphate Son Using Hydroxyapatite synthesized by Wastewater Sludge of Semiconductor Fabrication Process)

  • 강전택;정기호;신학기
    • 한국환경과학회지
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    • 제11권3호
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    • pp.257-262
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    • 2002
  • The hydroxyapatite(HAp) for the present study was prepared with the wastewater sludge from semiconductor fabrication process and it was crystallized in an electric furnace for 30 min at 90$0^{\circ}C$. The adsorption characteristics of HAp for phosphate ion in aqueous solution has been investigated. The adsorbed ratio of phosphate ion for HAp were investigated according to the reaction time, amount of HAp, concentration of standard solution, pH of solution, and influence of concomitant ions. The amount of adsorbed phosphate ion decreased with the increase of pH due to the mutual electrostatic repulsion between adsorbed phosphate ions and competitive adsorption between phosphate ion and OH- ion in aqueous solution. The maxium amount of the adsorption equilibrium for phosphate ion was about 24 mg/g of HAp. The HAp would likely to be a possible adsorbent for the removal of phosphate ion in the waste water.

Fabrication of Duplex Ceramic Composites by Organic-Inorganic Solution Process

  • Lee, Sang-Jin;Kim, Youn-Cheol
    • 한국세라믹학회지
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    • 제40권9호
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    • pp.837-841
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    • 2003
  • Duplex microstructure of zirconia and alumina has been achieved via an organic-inorganic solution technique. Zirconium 2,4-pentanedionate, aluminum nitrate and polyethylene glycol were dissolved in ethyl alcohol without any precipitation. The organicinorganic precursor gels were turned to porous powders having volume expansion through explosive, exothermic reaction during drying process. The volume expansion was caused by abrupt decomposition of the organic groups in the gels during the vigorous exothermic reaction. The volume expanded, porous powders were crystallized and densified at 1500$^{\circ}C$ for 1 h. At the optimum amount of the PEG polymer, the metal cations were well dispersed in the solution and a homogeneous polymeric network was formed. The polymer content also affected on the specific surface area of the synthesized powder and the grain size of the sintered composite.

HVOF 용사법에 의해 제조된 WC계 합금 코팅층의 방식특성(II) - 알칼리 용액에서의 분극특성 - (Anti-Corrosion Characteristics of WC-based Alloy Coatings Fabricated by HVOF Process - Polarization Characteristics in Alkaline Solution -)

  • 김태용;김영식;김재동
    • 동력기계공학회지
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    • 제18권6호
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    • pp.40-44
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    • 2014
  • The purpose of this paper is to investigate polarization characteristics of WC-based alloy coatings in alkaline solution. The coatings were fabricated with WC-CrC-Ni, WC-Co-Cr and WC-Co composite powders by HVOF process. Corrosion tests of coatings and substrate were carried out using potentiostat/galvanostat at solution with pH 8 and pH 13. Corrosion potential(Ecorr) and corrosion current density(Icorr) could be studied from polarization curve, and corrosion behavior was analyzed by SEM and EDS. WC-Co-Cr coating and WC-CrC-Ni coating showed more favorable anti-corrosion characteristics than WC-Co coating and substrate at solution with pH 8 and pH 13.

AFM 기반 액중 Tribo nanolithography 에서의 마스크 층 내식각성에 관한 연구 (Etch Resistance of Mask Layer modified by AFM-based Tribo-Nanolithography in Aqueous Solution)

  • 박정우;이득우
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.268-271
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    • 2005
  • Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

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Fabrication and characterization of solution processable organosilane-modified colloidal titania nanoparticles and silica-titania hybrid films

  • Kang, Dong Jun;Park, Go Un;Lee, Hyeon Hwa;Ahn, Myeong Sang;Park, Hyo Yeol
    • Journal of Ceramic Processing Research
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    • 제13권spc1호
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    • pp.78-81
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    • 2012
  • Colloidal titania nanoparticles were synthesized by a simple sol-gel process. The obtained nanoparticles showed high crystallinity and were of the anatase type. These crystalline colloidal titania nanoparticles were organically modified using methyl- and glycidyl-grafted silanes in order to enhance their stability and solution processability. The stabilized colloidal titania nanoparticles could be dispersed homogeneously without aggregation and converted into silica-titania hybrid films with the heterogeneous Si-O-Ti bonds by a low-temperature solution process. The fabricated silica-titania hybrid films showed high transparency (~ 90%) in the visible range, and low RMS roughness (<1 nm). Therefore, the organosilane-modified crystalline colloidal titania nanoparticles can be used in solution-processable functional coatings for electro-optical devices.

간접탄산염화를 위한 전기로제강슬래그 중 Ca, Fe 및 Si 성분의 초산수용액 침출 (Leaching of Ca, Fe and Si in Electric Arc Furnace Steel Slag by Aqueous Acetic acid Solution for Indirect Carbonation)

  • 윤기병
    • 자원리싸이클링
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    • 제26권1호
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    • pp.37-42
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    • 2017
  • 이산화탄소 저감을 위한 유효한 방법 중의 하나로 칼슘규산염 광물의 간접탄산염화 공정이 보고되고 있다. 이 공정은 염산, 질산 등의 산에 의하여 칼슘규산염으로부터 칼슘성분을 침출하는 단계와 이산화탄소에 의한 침출용액의 탄산염화 단계의 두 과정으로 구성된다. 침출용매로 초산수용액을 사용하는 경우에는 침출용액을 이산화탄소로 탄산염화 하는 과정에서 초산이 재생성 되어 침출단계로 순환되어 침출용매로 재사용될 수 있다. 제철 및 제강슬래그와 같은 산업부산물은 칼슘규산염을 많이 함유하고 있어 간접탄산염화공정의 원료로 사용될 수 있다. 본 연구에서는 초산수용액에 의한 국내 전기로제강슬래그의 침출효율을 조사하기 위하여, 초산수용액 농도, 침출온도 및 침출시간 등의 침출조건 변화에 따른 침출실험을 수행하였다.

아민과 카르복실산이 함유된 수계용액의 구리 배선 공정의 세정특성 (Cleaning Behavior of Aqueous Solution Containing Amine or Carboxylic Acid in Cu-interconnection Process)

  • 고천광;이원규
    • Korean Chemical Engineering Research
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    • 제59권4호
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    • pp.632-638
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    • 2021
  • 반도체 공정에서 구리 배선 공정의 도입에 따라 플라즈마 식각에 의해 배선의 형성과정에서 구리 산화물, 불화물 및 불화탄소 등을 포함한 복합 잔류물을 형성하게 된다. 본 연구에서는 아민기(-NH2)와 카르복실기(-COOH)를 갖는 성분으로 세정액을 제조하여 구리 배선 공정에서의 식각 잔류물 제거 특성을 분석하였다. 아민기를 포함한 세정액은 질소에 치환된 성분 및 탄소결합의 길이에 따라 세정효과에 차이를 보이며, 세정액의 pH가 증가함에 따라 구리 산화물의 식각 속도가 증가하는 경향성을 보였다. 아민기의 활성은 염기성 영역에서, 카르복실기의 활성은 산성 영역에서 이루어지며, 각각의 영역에서 구리 또는 구리 산화물과의 complex 형성을 통하여 세정공정이 진행되었다.

Structural and Electrical Features of Solution-Processed Li-doped ZnO Thin Film Transistor Post-Treated by Ambient Conditions

  • Kang, Tae-Sung;Koo, Jay-Hyun;Kim, Tae-Yoon;Hong, Jin-Pyo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.242-242
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    • 2012
  • Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

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Piecewise exact solution for seismic mitigation analysis of bridges equipped with sliding-type isolators

  • Tsai, C.S.;Lin, Yung-Chang;Chen, Wen-Shin;Chiang, Tsu-Cheng;Chen, Bo-Jen
    • Structural Engineering and Mechanics
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    • 제35권2호
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    • pp.205-215
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    • 2010
  • Recently, earthquake proof technology has been widely applied to both new and existing structures and bridges. The analysis of bridge systems equipped with structural control devices, which possess large degrees of freedom and nonlinear characteristics, is a result in time-consuming task. Therefore, a piecewise exact solution is proposed in this study to simplify the seismic mitigation analysis process for bridge systems equipped with sliding-type isolators. In this study, the simplified system having two degrees of freedom, to reasonably represent the large number of degrees of freedom of a bridge, and is modeled to obtain a piecewise exact solution for system responses during earthquakes. Simultaneously, we used the nonlinear finite element computer program to analyze the bridge responses and verify the accuracy of the proposed piecewise exact solution for bridge systems equipped with sliding-type isolators. The conclusions derived by comparing the results obtained from the piecewise exact solution and nonlinear finite element analysis reveal that the proposed solution not only simplifies the calculation process but also provides highly accurate seismic responses of isolated bridges under earthquakes.

Algorithm of solving the problem of small elastoplastic deformation of fiber composites by FEM

  • Polatov, Askhad M.;Khaldjigitov, Abduvali A.;Ikramov, Akhmat M.
    • Advances in Computational Design
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    • 제5권3호
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    • pp.305-321
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    • 2020
  • In this paper is presented the solution method for three-dimensional problem of transversely isotropic body's elastoplastic deformation by the finite element method (FEM). The process of problem solution consists of: determining the effective parameters of a transversely isotropic medium; construction of the finite element mesh of the body configuration, including the determination of the local minimum value of the tape width of non-zero coefficients of equation systems by using of front method; constructing of the stiffness matrix coefficients and load vector node components of the equation for an individual finite element's state according to the theory of small elastoplastic deformations for a transversely isotropic medium; the formation of a resolving symmetric-tape system of equations by summing of all state equations coefficients summing of all finite elements; solution of the system of symmetric-tape equations systems by means of the square root method; calculation of the body's elastoplastic stress-strain state by performing the iterative process of the initial stress method. For each problem solution stage, effective computational algorithms have been developed that reduce computational operations number by modifying existing solution methods and taking into account the matrix coefficients structure. As an example it is given, the problem solution of fibrous composite straining in the form of a rectangle with a system of circular holes.