• Title/Summary/Keyword: Solution-Based Deposition Method

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Metal-Semiconductor Contact Behavior of Solution-Processed ZnSnO Thin Film Transistors (용액법으로 제작된 ZnSnO 박막트랜지스터의 전극 물질에 따른 계면 접촉특성 연구)

  • Jeong, Young-Min;Song, Keun-Kyu;Woo, Kyoo-Hee;Jun, Tae-Hwan;Jung, Yang-Ho;Moon, Joo-Ho
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.401-407
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    • 2010
  • We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

Enhanced Optical Properties of Au Nanoparticles/ZnO Nanowires Fabiracted by X-ray Induced Wet Process

  • Lee, Mu-Seong;Gang, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.318.1-318.1
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    • 2014
  • Metal nano-crystals have been received much attentions owing to their excellent catalytic property and surface plasmon effect. In the last decade, many studies on synthesizing well-dispersive nanoparticles and on understanding their distinct physical properties have been performed. There were tremendous reports revealing the electrochemical activities and enhancement of surface plasmonic effect were dependent mainly on the size, shape, and composition. So far, most fabrication methods have been based on vacuum based deposition techniques, such as chemical vapor deposition and electron-beam evaporation, and then annealed them to transform into the nanoparticles. Recently, there were several reports regarding to the photoinduced nano-crystal synthesis as an effective way to produce the metal nanoparticles. In this study, we report synchrotron x-ray mediated synthesis of Au nanoparticles on ZnO nanowires. ZnO nanowires were fabricated by hydrothermal method, and then they were dip into a solution having Au clusters. Detailed structural evolution of Au nanoparticles was investigated using scanning electron microscopy and photoluminescence measurements. The results on formation of well-dispersive Au nanoparticles on ZnO nanowires will be presented.

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Synthesis and Characterization of Perylene-based Pyrrolopyrone Derivative for Organic Thin Film Transistor

  • Kim, Hyung-Sun;Jung, Sung-Ouk;Kim, Yun-Hi;Do, Lee-Mi;Kwon, Soon-Ki
    • Journal of Information Display
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    • v.6 no.4
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    • pp.1-5
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    • 2005
  • Perylene-based pyrrolopyrone derivative (PPD) was synthesized via condensation reaction with perylenetetracarboxylic dianhydride and 1,2-phenylenediarnine as n-type channel material. The structure of PPD was characterized by spectroscopic methods such FT-IR and $^1H$-NMR. PPD exhibited high thermal stability ($T_{d5wt%}: 560^{\circ}C$) and was found to be soluble only in protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. The PPD solution showed maximum absorption and emission at 601 and 628 nm, respectively. Thin film transistors were fabricated by vacuum deposition and solution casting method. The electron mobilities of the devices were achieved as high as $0.17{\times}10^{-6}cm^2/Vs$ for vacuum deposited device and $0.4{\times}10^{-6}cm^2/Vs$ for spin coated device, respectively.

Effect of few-walled carbon nanotube crystallinity on electron field emission property

  • Jeong, Hae-Deuk;Lee, Jong-Hyeok;Lee, Byung-Gap;Jeong, Hee-Jin;Lee, Geon-Woong;Bang, Dae-Suk;Cho, Dong-Hwan;Park, Young-Bin;Jhee, Kwang-Hwan
    • Carbon letters
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    • v.12 no.4
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    • pp.207-217
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    • 2011
  • We discuss the influence of few-walled carbon nanotubes (FWCNTs) treated with nitric acid and/or sulfuric acid on field emission characteristics. FWCNTs/tetraethyl orthosilicate (TEOS) thin film field emitters were fabricated by a spray method using FWCNTs/TEOS sol one-component solution onto indium tin oxide (ITO) glass. After thermal curing, they were found tightly adhered to the ITO glass, and after an activation process by a taping method, numerous FWCNTs were aligned preferentially in the vertical direction. Pristine FWCNT/TEOS-based field emitters revealed higher current density, lower turn-on field, and a higher field enhancement factor than the oxidized FWCNTs-based field emitters. However, the unstable dispersion of pristine FWCNT in TEOS/N,N-dimethylformamide solution was not applicable to the field emitter fabrication using a spray method. Although the field emitter of nitric acid-treated FWCNT showed slightly lower field emission characteristics, this could be improved by the introduction of metal nanoparticles or resistive layer coating. Thus, we can conclude that our spray method using nitric acid-treated FWCNT could be useful for fabricating a field emitter and offers several advantages compared to previously reported techniques such as chemical vapor deposition and screen printing.

Addition of $B_2O_3$ precursors and their effect on texture and surface roughness of $La_2Zr_2O_7$ buffer layers

  • Kim, Young-Kuk;Yoo, Jai-Moo;Chung, Kook-Chae;Shin, Pyung-Woo
    • Progress in Superconductivity and Cryogenics
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    • v.10 no.2
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    • pp.20-23
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    • 2008
  • [ $La_2Zr_2O_7$] (LZO) buffer layers were deposited on biaxially textured Ni-W substrates by chemical solution deposition method (CSD). In this study, the effect of $B_2O_3$ addition on texture and surface roughness of LZO films was investigated. The alkoxide-based precursor solution was employed to synthesize the precursor solution of LZO and the solution was coated on biaxially textured Ni-W substrates and subsequently annealed at $900^{\circ}C$ for crystallization. The pure LZO film without $B_2O_3$ addition showed a (222) reflection in the X-ray diffraction (XRD) profile. The intensity of (222) reflection was enhanced and more rough surface was obtained after further repetition of coating. Contrary to this, the LZO film prepared by $B_2O_3$ added precursor solution shows well-developed (400) reflection peak in the XRD profile and excellent biaxial texture (${\Delta}{\theta}=4.3^{\circ}$, ${\Delta}{\phi}=6.8^{\circ}$). The surface roughness of LZO films were also improved by addition of $B_2O_3$ even after multicoating ($R_{rms}{\sim}3.1nm$). It was shown that the LZO film with smooth surface and biaxial texture was grown on the biaxially textured Ni-W substrates with addition of $B_2O_3$ in the precursor solution.

Morphological and Structural Characterization of ZnO Films Deposited by Multiple Sol-Gel Methods (다중 졸-겔 방법에 의해 증착된 ZnO 막의 형태적 및 구조적 특성평가)

  • Muhammad Saqib;Woo Young Kim
    • Journal of the Korean Applied Science and Technology
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    • v.40 no.5
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    • pp.1116-1125
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    • 2023
  • Zinc oxide film is a transparent conductive material and is used in optoelectronic devices in various fields. Therefore, characterization of the zinc oxide film will play a very important role in improving the performance of optoelectronic devices. Here, we will evaluate the morphological and structural characteristics of such a zinc oxide film based on the solution process. Specifically, the sol-gel method will be repeatedly performed to observe the change in material properties of the zinc oxide film according to the number of times of spin-coating. It was confirmed that crystallization proceeded as a result of performing the sol-gel method repetitively 5 times under constant solution conditions. At 7 times or more, the element composition and crystallinity tended to converge to a specific value. The average crystal size of the final zinc oxide film was calculated to be about 10.7 nm. In this study, the number of processes showing optimal crystallization was 7 times. The results and methodology of this study can be applied while varying various solution process variables and are expected to contribute to establishing optimal process conditions.

Multi-channel analyzer based on a novel pulse fitting analysis method

  • Wang, Qingshan;Zhang, Xiongjie;Meng, Xiangting;Wang, Bao;Wang, Dongyang;Zhou, Pengfei;Wang, Renbo;Tang, Bin
    • Nuclear Engineering and Technology
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    • v.54 no.6
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    • pp.2023-2030
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    • 2022
  • A novel pulse fitting analysis (PFA) method is presented for the acquisition of nuclear spectra. The charging process of the feedback capacitor in the resistive feedback charge-sensitive preamplifier is equivalent to the impulsive pulse, and its impulse response function (IRF) can be obtained by non-linear fitting of the falling edge of the nuclear pulse. The integral of the IRF excluding the baseline represents the energy deposition of the particles in the detector. In addition, since the non-linear fitting process in PFA method is difficult to achieve in the conventional architecture of spectroscopy system, a new multi-channel analyzer (MCA) based on Zynq SoC is proposed, which transmits all the data of nuclear pulses from the programmable logic (PL) to the processing system (PS) by high-speed AXI-Stream in order to implement PFA method with precision. The linearity of new MCA has been tested. The spectrum of 137Cs was obtained using LaBr3(Ce) scintillator detector, and was compared with commercial MCA by ORTEC. The results of tests indicate that the MCA based on PFA method has the same performance as the commercial MCA based on pulse height analysis (PHA) method and excellent linearity for γ-rays with different energies, which infers that PFA method is an effective and promising method for the acquisition of spectra. Furthermore, it provides a new solution for nuclear pulse processing algorithms involving regression and iterative processes.

Influence of RTA treatments on optical properties of ZnO nanorods synthesized by wet chemical method

  • Shan, Qi;Ko, Y.H.;Lee, H.K.;Yu, J.S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.190-190
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    • 2010
  • Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

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Development of the Organic Solar Cell Technology using Printed Electronics (인쇄전자 기술을 이용한 유기 태양전지 기술 개발)

  • Kim, Jungsu;Yu, Jongsu;Yoon, Sungman;Jo, Jeongdai;Kim, Dongsoo
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.113.1-113.1
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    • 2011
  • PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active compo-nents in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT(Thin Film Transistor), which are printed withfunctional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manu-facturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and active layer which consist of the P3HT:PCBM. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

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Fabrication of low-stress silicon nitride film for application to biochemical sensor array

  • Sohn, Young-Soo
    • Journal of Sensor Science and Technology
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    • v.14 no.5
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    • pp.357-361
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    • 2005
  • Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.