• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.73-78
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• 2020

There appears lateral capillary force in a hydrophilic flat needle employed for the fabrication of fine organic thin-film stripes, bringing in an increase of the stripe width. It also causes the stripe thickness to increase with increasing coating speed, which is hardly observed in a normal coating process. Through computational fluid dynamics (CFD) simulations, we demonstrate that the lateral capillary flow can be substantially suppressed by increasing the contact angle of the needle end. Based on the simulation results, we have coated the outer surface of the flat needle with a hydrophobic material (polytetrafluoroethylene (PTFE) with the water contact angle of 104°). Using such a hydrophobic needle, we can suppress the lateral capillary flow of an aqueous poly(3,4-ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) to a great extent, rendering the stripe narrow (63 ㎛ at 30 mm/s). Consequently, the stripe thickness is decreased as the coating speed increases. To demonstrate its applicability to solution-processable organic light-emitting diodes (OLEDs), we have also fabricated OLED with the fine PEDOT: PSS stripe and observed the strong light-emitting stripe with the width of about 68 ㎛.

• 공업화학
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• 제8권6호
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• pp.1022-1028
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• 1997

본 연구에서는 1M $LiClO_4/PC$ 유기 용액 중에 존재하는 리튬 이온의 층간 반응에 의하여 전기 발색 현상을 나타내는 전자-선 증발법으로 제조된 비정질의 텅스텐 산화물 박막과 전해질 계면에서의 전기화학적 특성들을 연구하기 위하여 음극 Tafel 분극법, 순환 전류-전위법 및 전기량 적정법 등의 전기화학 측정법과 X선 회절 분석법을 이용한 박막의 결정 상태 조사 등이 수행되었다. 특히 다중 순환 전류-전위 곡선으로부터 리튬 이온의 층간 반응은 발색 반응에 대한 인가 과전압이 약 1.0V 이내에서는 안정된 소 발색의 가역적 현상을 나타내었으나, 발색 반응에 대한 인가 과전압이 1.5V일 때는 발색 시 삽입된 박막 내부의 리튬이 소색 시 완전히 빠져 나오지 못하여, 박막 내부에 리튬이 축적되는 현상을 나타내었으며, 적은 순환 횟수임에도 불구하고 소 발색의 전류 밀도가 감소되는 것이 조사되어 발색에 필요한 인가 과전압의 한계가 존재함을 알 수 있었다.

• 반도체디스플레이기술학회지
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• 제16권3호
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• pp.87-92
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• 2017

Poly(urethane acrylate) siloxane oligomers with Interpenetrating polymer networked nanoparticles were prepared to synthesize hard coating solution by reaction with isophorone diisocyanate(IPDI) of 1, 2, 3, 4 phr. The structures and molecular weights of the synthesized solutions were characterized by IR spectroscopy and gel permeation chromatography, respectively. In the cross-cut test for the adhesion, all the solutions showed good adhesion of 5B regardless of the content of IPDI and film thickness. The addition of 1 phr IPDI resulted in the best pencil hardness. The IPDI combined siloxane hard coating solution showed more flexibility than the siloxane solution. These results will yield the improvement in the siloxane solution using for plastic display plate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• Tribology and Lubricants
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• 제35권5호
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• pp.300-309
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• 2019

Gas foil thrust bearings (GFTBs) support axial loads in oil-free, high speed rotating machinery using air or gas as a lubricant. Due to the inherent low viscosity of the lubricant, GFTBs often have super-laminar flows in the film region at operating conditions with high Reynolds numbers. This paper develops a mathematical model of a GFTB with turbulent flows and validates the model predictions against those from the literature. The pressure distribution, film thickness distribution, load carrying capacity, and power loss are predicted for both laminar and turbulent flow models and compared with each other. Predictions for an air lubricant show that the GFTB has high Reynolds numbers at the leading edge where the film thickness is large and relatively low Reynolds numbers at the trailing edge. The predicted load capacity and power loss for the turbulent flow model show little difference from those for the laminar flow model even at the highest speed of 100 krpm, because the Reynolds numbers are smaller than the critical Reynolds number. On the other hand, refrigerant (R-134a) lubricant, which has a higher density than air, had significant differences due to high Reynolds numbers in the film region, in particular, near the leading and outer edges. The predicted load capacity and power loss for the turbulent flow model are 2.1 and 2.3 times larger, respectively, than those for the laminar flow model, thus implying that the turbulent flow greatly affects the performance of the GFTB.

• 한국표면공학회지
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• 제52권3호
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• pp.138-144
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• 2019

In this work, PEO (Plasma Electrolytic Oxidation) film formation behavior of Al6061 alloy was investigated as a function of applied current density of AC at 310 Hz in the range from $120mA/cm^2$ to $300mA/cm^2$ in 0.5 M $Na_2SiO_3$ solution. When applied current density is lower than a critical voltage of about $132mA/cm^2$, voltage reaches a steady-state values less than 120 V without generation of arcs and metallic color of the alloy surface remains. On the other hand, when applied current density exceeds about $132mA/cm^2$, voltage increases continuously with time and arcs are generated at more than 175 V, resulting in the formation of PEO films with grey colors. Two different types of arcs, large size and small number of arcs with orange color, and small size and large number of arcs with white color, were generated at the same time when the PEO film thickness exceeds about $50{\mu}m$, irrespective of applied current density. Formation efficiency of the PEO films was found to increase with increasing applied current density and the growth rate was obtained to be about $5{\mu}m/min$ at $300mA/cm^2$. It was also found that surface roughness of the PEO films with $70{\mu}m$ thickness is not dependent on the applied current density.

• 마이크로전자및패키징학회지
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• 제26권1호
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• pp.35-39
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• 2019

현재까지 다공성 알루미나 구조물은 대표적으로 양극산화 방법으로 구현되어 오고 있다. 양극산화 방법을 통해 규칙적인 배열을 가진 알루미늄 산화 피막은 쉽게 만들 수 있지만, 복합 구조물 형태를 가진 산화피막은 상대적으로 구현하기가 어렵다. 본 연구는 인산용액에서 양극산화 인가전압에 따른 피막 기공 크기, 두께 및 구조물 형태 변화를 관찰하고자 한다. 다층 복합 산화물 구조물 구현을 위해 양극산화 인가전압 조건을 조절하였고, 실험 조건은 10% 인산용액에서 양극산화 인가전압 100 V와 120 V로 각각 수행하였다. 실험 결과는 각 조건에 따라 다공성 구조물과 복합 구조물 형태의 산화물 구조를 구현할 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.35.1-35.1
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• 2010

The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.