• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1414-1417
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• 1996

The purpose of this study Is to research and develop $V_{6}O_{13}$ composite cathode for lithium thin film battery. $V_{6}O_{13}$ represents a class of cathode active material used in Li rechargeable batteries. In this study, we investigated cyclic voltammetry and charge/discharge characteristics of $V_6O_{13}$/SPE/Li cells. Cyclic voltammogram of $V_{6}O_{13}$/SPE/Li cell at scan rate 1mV/sec showed reduction peaks of 2.25V and 2.4V and oxidation peaks of 2.4V and 2.2V. The discharge curve of $V_{6}O_{13}$/SPE/Li cell showed 4 potential plateaus. The discharge capacity was decreased in the beginning of charge/discharge cycling. After 8th cycling, the discharge capacity was stable. The discharge capacity of 1st cycle and 15th cycle was 290mAh/g and 147mAh/g at $25^{\circ}C$, respectively.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.781-785
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• 2011

In this work, a nano-sized samaria-doped ceria(SDC) was prepared by a urea-based hydrothermal method and characterized by XRD, FESEM and TEM. It was observed that the increase in synthesis time and temperature gave rise to crystallity and particles size. Moreover, the synthesised powders had a excellent ion-conductivity(0.1 S/cm at 600~$800^{\circ}C$) which is suitable for electrolyte of intermediate temperature-solid oxide fuel cell(IT-SOFC). Subsequently for use as electrolyte for anode-supported IT-SOFC, we tried to deposit the SDC powder on a porous NiO-SDC substrate by electrophoretic deposition(EPD) method. From the FESEM observation, a compact

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.237.2-237.2
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• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.9
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• pp.931-935
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• 2012

In this study, we fabricate and investigate low-temperature solid oxide fuel cells with a ceramic substrate/porous metal/ceramic/porous metal structure. To realize low-temperature operation in solid oxide fuel cells, the membrane should be fabricated to have a thickness of the order of a few hundreds nanometers to minimize IR loss. Yttrium-doped barium zirconate (BYZ), a proton conductor, was used as the electrolyte. We deposited a 350-nm-thick Pt (anode) layer on a porous substrate by sputter deposition. We also deposited a 1-${\mu}m$-thick BYZ layer on the Pt anode using pulsed laser deposition (PLD). Finally, we deposited a 200-nm-thick Pt (cathode) layer on the BYZ electrolyte by sputter deposition. The open circuit voltage (OCV) is 0.806 V, and the maximum power density is 11.9 mW/$cm^2$ at $350^{\circ}C$. Even though a fully dense electrolyte is deposited via PLD, a cross-sectional transmission electron microscopy (TEM) image reveals many voids and defects.

• Journal of the Korean Electrochemical Society
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• v.4 no.2
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• pp.58-64
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• 2001

YSZ ($8mol\%$ yttria-stabilized zirconia)-modified LSM $(La_{0.85}Sr_{0.15}MnO_3)$ composite cathodes were fabricated by formation of YSZ film on triple phase boundary (TPB) of LSM/YSZ/gas. The YSZ coating film greatly enlarged electrochemical reaction sites from the increase of additional TPB. The composite cathode was formed on thin YSZ electrolyte (about 30 Um thickness) supported on an anode and then I-V characterization and AC impedance analyses were performed at temperature between $700^{\circ}C\;and\;800^{\circ}C$. As results of the impedance analysis on the cell at $800^{\circ}C$ with humidified hydrogen as the fuel and air as the oxidant, R1 around the frequency of 1000 Hz represents the anode Polarization. R2 around the frequency of 100Hz indicates the cathode polarization, and R3 below the frequency of 10 Hz is the resistance of gas phase diffusion through the anode. The cell with the composite cathode produced power density of $0.55\;W/cm^2\;and\;1W/cm^2$ at air and oxygen atmosphere, respectively. The I-V curve could be divided into two parts showing distinctive behavior. At low current density region (part I) the performance decreased steeply and at high current density region (part II) the performance decreased gradually. At the part I the performance decrease was especially resulted from the large cathode polarization, while at the part H the performance decrease related to the electrolyte polarization.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.127.1-127.1
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• 2010

고체산화물연료전지는 고효율 및 무공해의 전기화학 에너지 변환장치로서, 최근 국내외에서 활발한 연구개발이 수행되고 있다. 특히, 고체산화물 연료전지 시스템의 조기 상용화를 위해 시스템의 작동온도를 약 $800^{\circ}C$ 이하로 낮추고 저가로 생산 할 수 있는 제조공정 개발에 대한 연구를 적극적으로 수행하고 있다. 본 연구에서는 고체산화물연료전지의 단위셀를 구성하는 연료극지지체 및 박막 전해질에 대해서 저가 양산의 테이프케스팅법 및 동시소성 공정, 그리고 연료극 지지체 전해질(anode-supported electrolyte)에 대한 공기극 페이스트 프린팅 제조공정에 대해 소개한다. 또한 고체산 화물연료전지의 제조공정 및 시간을 단축하기 위해 방전플라즈마 소결공법(SPS)에 의한 연료극 지지체 제조 공정, 단위셀의 성능 최적화를 위한 나노 스케일의 고성능 전해질 소재 분말합성 공정(crystallite size: 5~10nm, surface area : $100m^2/g$ 이상) 그리고 테이프케스팅에 의한 박막 전해질 제조 공정(thin film : $10{\mu}m$ 이하) 등 주요 단위셀 소재 및 부품의 제조공정 특성 그리고 단위셀의 전기화학적 특성(max. power density : 1.0 W/$cm^2$)에 대해 소개하며, 최종적으로 평판형 대면적 고체산화물연료전지(max. $20cm{\times}15cm$)의 단위셀 상용화 제조 기술 및 성능평가 기술에 대해서도 소개 할 예정이다.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.686-690
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• 2010

$TiO_2$ nanowires were self-catalytically synthesized on bare Si(100) substrates using metallorganic chemical vapor deposition. The nanowire formation was critically affected by growth temperature. The $TiO_2$ nanowires were grown at a high density on Si(100) at $510^{\circ}C$, which is near the complete decomposition temperature ($527^{\circ}C$) of the Ti precursor $(Ti(O-iPr)_2(dpm)_2)$. At $470^{\circ}C$, only very thin (< $0.1{\mu}m$) $TiO_2$ film was formed because the Ti precursor was not completely decomposed. When growth temperature was increased to $550^{\circ}C$ and $670^{\circ}C$, the nanowire formation was also significantly suppressed. A vaporsolid (V-S) growth mechanism excluding a liquid phase appeared to control the nanowire formation. The $TiO_2$ nanowire growth seemed to be activated by carbon, which was supplied by decomposition of the Ti precursor. The $TiO_2$ nanowire density was increased with increased growth pressure in the range of 1.2 to 10 torr. In addition, the nanowire formation was enhanced by using Au and Pt catalysts, which seem to act as catalysts for oxidation. The nanowires consisted of well-aligned ~20-30 nm size rutile and anatase nanocrystallines. This MOCVD synthesis technique is unique and efficient to self-catalytically grow $TiO_2$ nanowires, which hold significant promise for various photocatalysis and solar cell applications.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.283-289
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• 2001

Composite cathodes of 50/50 vol% LSM- YSZ (La$_{1-x}$Sr$_{x}$MnO$_3$-yttria stabilized zirconia) were deposited onto surface- Polished YSZ electrolytes by colloidal deposition technique. The cathode characteristics were then examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD) and studied by ac impedance spectroscopy (IS). The typical impedance spectra measured for an air/LSM- YSZ/YSZ/Pt/air cell at $700^{\circ}C$ were composed of two depressed arcs. Addition of YSZ to the LSM electrode significantly enlarged the triple-phase boundaries (TPB) length inside the electrode, which led to a pronounced decrease in cathodic resistivity of LSM-YSZ composite electrodes. Polishing the electrolyte surface to eliminate the influences of surface impurities and to enlarge the TPB length can further reduce cathode resistivity. The cathodic resistivity of the LSM- YSZ electrodes was a strong function of operation temperature, composition and particle size of cathode materials, applied current, and electrolyte surface roughness.

• Korean Chemical Engineering Research
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• v.57 no.4
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• pp.525-530
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• 2019

The performance and stability of solid oxide fuel cells (SOFCs) depend on the microstructure of the electrode and electrolyte. In anode, porosity and pore distribution affect the active site and fuel gas transfer. In an electrolyte, density and thickness determine the ohmic resistance. To optimizing these conditions, using costly method cannot be a suitable research plan for aiming at commercialization. To solve these drawbacks, we made high performance unit cells with low cost and highly efficient ceramic processes. We selected the NiO-YSZ cermet that is a commercial anode material and used facile methods like die pressing and dip coating process. The porosity of anode was controlled by the amount of carbon black (CB) pore former from 10 wt% to 20 wt% and final sintering temperature from $1350^{\circ}C$ to $1450^{\circ}C$. To achieve a dense thin film electrolyte, the thickness and microstructure of electrolyte were controlled by changing the YSZ loading (vol%) of the slurry from 1 vol% to 5 vol. From results, we achieved the 40% porosity that is well known as an optimum value in Ni-YSZ anode, by adding 15wt% of CB and sintering at $1350^{\circ}C$. YSZ electrolyte thickness was controllable from $2{\mu}m$ to $28{\mu}m$ and dense microstructure is formed at 3vol% of YSZ loading via dip coating process. Finally, a unit cell composed of Ni-YSZ anode with 40% porosity, YSZ electrolyte with a $22{\mu}m$ thickness and LSM-YSZ cathode had a maximum power density of $1.426Wcm^{-2}$ at $800^{\circ}C$.