• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.630-634
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• 2014

$(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.9975}Sb_{0.065}Ta_{0.0375})O_3+0.3 wt%CoO$ ceramics were fabricated as a function of CuO addition by traditional solid state sintering process in order to develop excellent lead-free piezoelectric ceramics composition. The addition of CuO in the LNKNTS composition ceramics can effectively enhance the densification of the ceramics, resulting in the oxygen vacancies as hardening effect. The excellent piezoelectric properties of electromechanical coupling factor($k{\small}_P$) of 0.378, piezoelectric constant($d_{33}$) of 152 pC/N were obtained from the 1.0 mol% CuO doped LNKNTS ceramics sintered at $1,020^{\circ}C$ for 3 h.

• 한국재료학회지
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• 제27권6호
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• pp.301-306
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• 2017

The discovery of new luminescent materials for use in light-emitting diodes(LEDs) has been of great interest, since LED-based solid state lighting applications are attracting a lot of attention in the energy saving and environmental fields. Recent research trends have centered on the discovery of new luminescent materials rather than on fine changes in well-known luminescent materials. In a sense, the novelty of our study beyond simple modification or improvement of existing phosphors. A good strategy for the discovery of new fluorescent materials is to introduce activators that are appropriate for conventional inorganic compounds, that have well-defined structures in the crystal structure database, but have not been considered as phosphor hosts. Another strategy is to discover new host compounds with structures that cannot be found in any existing databases. We have pursued these two strategies at the same time using composite search technology with particle swarm optimization(PSO). In this study, using PSO, we have tracked down a search space composed of Sr-Al-Si-O-N and have discovered a new phosphor structure with yellow luminescence; this material is a potential candidate for UV-LED applications.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.11-15
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• 2017

Red phosphors, $Sr_2Si_5N_8:Eu^{2+}$, were synthesized as a single-phase crystal structure by optimizing carbon and $Eu^{2+}$ contents in a carbothermal reduction nitridation method. With increasing $Eu^{2+}$ contents, the photoluminescence spectra were red-shifted from 600 nm peak for 1 mol% for to 700 nm for 7 mol%. It was suggested that this red shift is attributed to the energy transfer from one low-energy sited $Eu^{2+}$ (1) to other high-energy sited $Eu^{2+}$ (2). Finally, the best red sample (620 nm emission peak and 80 nm half width for 3 mole% of $Eu^{2+}$) was packaged on a Blue LED together with two additional green and yellow phosphors, the fabricated White LED showed a high color-rendering index of 90 and white color coordinates of x= 0.321 and y = 0.305.

• 한국재료학회지
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• 제21권5호
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• pp.250-254
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• 2011

We have synthesized bluish-green, highly-efficient $BaSi_2O_2N_2:Eu^{2+}$ and $(Ba,Sr)Si_2O_2N_2:Eu^{2+}$ phosphors through a conventional solid state reaction method using metal carbonate, $Si_3N_4$, and $Eu_2O_3$ as raw materials. The X-ray diffraction (XRD) pattern of these phosphors revealed that a $BaSi_2O_2N_2$ single phase was obtained. The excitation and emission spectra showed typical broadband excitation and emission resulting from the 5d to 4f transition of $Eu^{2+}$. These phosphors absorb blue light at around 450 nm and emit bluish-green luminescence, with a peak wavelength at around 495 nm. From the results of an experiment involving Eu concentration quenching, the relative PL intensity was reduced dramatically for Eu = 0.033. A small substitution of Sr in place of Ba increased the relative emission intensity of the phosphor. We prepared several white LEDs through a combination of $BaSi_2O_2N_2:Eu^{2+}$, YAG:$Ce^{3+}$, and silicone resin with a blue InGaN-based LED. In the case of only the YAG:$Ce^{3+}$-converted LED, the color rendering index was 73.4 and the efficiency was 127 lm/W. In contrast, in the YAG:$Ce^{3+}$ and $BaSi_2O_2N_2:Eu^{2+}$-converted LED, two distinct emission bands from InGaN (450 nm) and the two phosphors (475-750 nm) are observed, and combine to give a spectrum that appears white to the naked eye. The range of the color rendering index and the efficiency were 79.7-81.2 and 117-128 lm/W, respectively. The increased values of the color rendering index indicate that the two phosphor-converted LEDs have improved bluish-green emission compared to the YAG:Ce-converted LED. As such, the $BaSi_2O_2N_2:Eu^{2+}$ phosphor is applicable to white high-rendered LEDs for solid state lighting.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.189-189
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• 2016

Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

• 한국산학기술학회논문지
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• 제10권12호
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• pp.3540-3545
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• 2009

보석용 다이아몬드의 합성, 처리기술의 발달로 천연 유색다이아몬드를 신속하고, 경제적이고, 재현성있게 감별할 필요가 커지고 있다. 천연다이아몬드의 감별을 위해 UV광원에 의한 다이아몬드의 형광 이미지 분석과 X-ray Lang 분석을 통하여 4개의 천연 유색다이아몬드와 1개의 합성 유색다이아몬드를 분석하여 보았다. 천연다이아몬드가 UV 형광이미지와 X-선 Lang분석에 대해 상대적으로 균일한 이미지를 보임에 비해 합성석은 국부적으로 균일한 이미지를 보여 효과적인 감별이 가능하였다. 특히 X-선 Lang 이미지 분석이 천연 유색다이아몬드의 감별에 더 높은 분해능으로 효과적인 감별이 가능하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• 한국재료학회지
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• 제26권10호
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• pp.577-582
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• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

• 공업화학
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• 제26권6호
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• pp.725-729
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• 2015

유기발광다이오드(organic light emitting diodes, OLEDs)는 높은 효율, 안정성, 신물질 개발과 같은 연구들을 바탕으로 차세대 디스플레이 및 조명으로써의 높은 기술력과 학문적 발전을 달성하였다. 본 논문에서는 hexaazatrinaphthylene (HAT) 유도체들을 OLEDs 소자의 정공주입층으로 사용하여 제작된 고효율의 녹색 인광 OLEDs 소자의 특성을 연구하였다. Indium Tin Oxide (ITO)전극과 정공수송층 사이에 삽입된 박막의 HAT 유도체층은 $1,000cd/m^2$의 구동 조건에서 OLEDs 소자의 외부양자효율을 기존의 8.8%에서 13.6%로, 전류효율을 30.8 cd/A에서 47.7 cd/A로 각각 향상시켰다. 삽입된 HAT 유도체층은 발광층 내부에서 최적화된 전자-정공의 균형을 이루게 하여 소자의 효율 향상에 기여하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.139-139
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• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.