• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• Journal of Korea Foundry Society
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• v.26 no.1
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• pp.27-33
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• 2006

Phase evolutions involving nucleation stages together with diffusional growth have been examined in order to provide a guideline for determining rate limiting stages during phase evolutions. In multiphase materials systems in coatings, composites or multilayered structures, diffusion treatments often result in the development of metastable/intermediate phases at the reaction interfaces. The development of metastable phases during solid state interdiffusion demonstrates that the nucleation reaction can be one controlling factor. Also, the concentration gradient and the relative magnitudes of the component diffusivities provide a basis for a phase selection and the application of a kinetic bias strategy in the phase selection. For multicomponent alloy systems, the identification of the operative diffusion pathway is central to control phase formation. Experimental access to the nucleation and growth stage is discussed in thin film multi layers and bulk samples.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.642-648
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• 2011

This paper describes an experimental study on ultrasonic welding of similar and dissimilar metals. There are optimum welding conditions which are found for welding of Al/Al and Al/Cu. It evaluated weldability using tensile test, SEM observation and EDX-ray analysis. Both ultrasonic welding of Al/Al and Al/Cu have amplitude as the variable factor. Al/Cu welding was examined again with welding time as variable factor to find the best conditions. The more welding time or amplitude increase, the better weldability. The optimum conditions for ultrasonic welding of Al/Al were formed at pressure 0.25 MPa, welding time 0.25 sec, amplitude 90%. Pressure 0.25 MPa, welding time 0.4 sec, amplitude 80% are optimized for Al/Cu ultrasonic metal welding and solid-state diffusion generated by ultrasonic vibration and frictional heat is confirmed at the welded interface.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.56-65
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• 2012

Functional materials are often exposed to high temperatures and inherent temperature gradients. These temperature gradients act as thermodynamic driving forces for the diffusion of mobile components. The detailed consequences of thermodiffusion depend on the boundary conditions of the non-isothermal sample: Once the boundaries of the sample are inert and closed for exchange of the mobile components, thermodiffusion leads to their pile-up in the stationary state (the so called Soret effect). Once the system is open for an exchange of the mobile component, chemical diffusion adds to the Soret effect, and stationary non-zero component fluxes are additionally observed in the stationary state. In this review, the essential aspects of thermodiffusion and Soret effect in inorganic functional materials are briefly summarized and our current practical knowledge is reviewed. Major examples include nonstoichiometric binary compounds (oxides and other chalcogenides) and ternary solid solutions. The potential influence of the Soret effect on the long term stability of high temperature thermoelectrics is briefly discussed. Typical Soret coefficients for nonstoichiometric compounds are found to be of the order of (d${\delta}$/dT) ${\approx}$ 1%/K.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.59-64
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• 2021

System-in-package (SIP) technology using heterogeneous integration is becoming the key of next-generation semiconductor packaging technology, and the development of low temperature Cu bonding is very important for high-performance and fine-pitch SIP interconnects. In this study the low temperature Cu bonding and the anti-oxidation effect of copper using porous Ag nanolayer were investigated. It has been found that Cu diffuses into Ag faster than Ag diffuses into Cu at the temperatures from 100℃ to 200℃, indicating that solid state diffusion bonding of copper is possible at low temperatures. Cu bonding using Ag nanolayer was carried out at 200℃, and the shear strength after bonding was measured to be 23.27 MPa.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.203-209
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• 1999

LaAlO3d single phase used as the butter layer on Si wafer for YBa2Cu3O7-$\delta$ superconductor application were prepared by solid state reaction method and by self-sustaining combustion process. The microstructure and crystallity of synthesiszed LaAlO3 powder studied using scanning electron microscope (SEM) and X-ray diffractometer(XRD), specific surface area and sintering characteristics fo powder were investigated by Brunauer-Emmett-Teller (BET) method and dilatometer respectively. In solid state reaction method, it is difficult to obtain LaAlO3 single phase up to 150$0^{\circ}C$ period. However, in self-sustaining combustion process, it is to easy to do it only $650^{\circ}C$. Based on the results of analysis of dilatometer it is easier to obtain high sintering density (98.87%) in self-sustaining combustion process than in the solid state reaction method. This reason is that the average particle size prepared by self-sustaining combustion process is nano crystal size and has high specific surface are value(56.54 $m^2$/g) compared with that by solid state reaction method. Also, LaAlO3 layer on the Si wafer has been achieved by screen printing and sintering method. Even though the sintering temperature is 130$0^{\circ}C$, the phenomena of silicon out diffusion in LaAlO3/Si interphase are not observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.212-212
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• 2010

Recently, lithium transition metal phosphates with an ordered olivine-type structure, $LiMPO_4$ (M=Fe, Mn, Ni, and Co), have attracted extensive attention due to a high theoretical specific capacity (170 mAh/g). The $LiMPO_4$ is the most attractive because of its high stability, low cost, high compatibility with environment. However, it is difficult to attain its full capacity because its electronic conductivity is very low, and diffusion of Li-ion in the olivine structure is slow and the supervalue cation doping was used. In this research, we are used the supervalue cation doping methode such as Cu, Ti, and Mg were partially replace the Fe. The cycling performance resulted of the used $LiM_xFe_{1_x}PO_4$ cathode materials for lithium batteries exhibit excellent high capacity than $LiFePO_4$/Li cells.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.55.1-55.1
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• 2011

Dye-sensitized solar cell(DSSC) have been considered one of the promising alternatives to conventional solar cells, because of their low cost, easy fabrication and relatively high energy conversion efficiency. However, although the cell offers reasonable efficiency at least 11%, the use of a liquid electrolyte placed technological challenges for achieving the desired durability and operational stability of the cell. In order to prevent or reduce electrolyte leakage considerable efforts have been made, such as p-type semiconductor or organic hole-transport material that better mechanical properties and simple fabrication processes. In this work, we synthesized solid-state electrolyte containing LiI and KI metal salt with starting materials of poly ethylene oxide to substitute liquid electrolyte enhance the ionic conductivity and solar conversion efficiency. Li+ leads to faster diffusion and higher efficiency and K+ leading to higher ionic conductivity. The efficiency of poly ethylene oxide/LiI system electrolyte is 1.47% and poly ethylene oxide/potassium electrolyte is 1.21%. An efficiency of 3.24% is achieved using solid-state electrolyte containing LiI and KI concentrations. The increased solar conversion efficiency is attributed to decreased crystallinity in the polymer that leads to enhanced charge transfer.

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.43.2-43.2
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• 2009

Electron microbursts are the intense electron precipitation which durations are less than one second. We measured the energy spectra of the microbursts from 170 keV to 340 keV with solid state detectors aboard the low-altitude (680km), polar-orbiting Korean STSAT-1 (Science and Technology SATellite). The data showed that the loss cone at these energies is empty except when microbursts abruptly appear and fill the loss cone in less than 50 msec. This fast loss cone filling requires pitch angle diffusion coefficients larger than ~ 10-2rad2/sec, while ~10-5 rad2/sec was proposed by a wave particle interaction theory. We recalculated the diffusion coefficient, and reviewed of electron microburst generation mechanism with test particle simulations. This simulation successfully explained how chorus waves make pitch angle diffusion within such short period. From considering the resonance condition between wave and electrons, we also showed ~ 100 keV electrons could be easily aligned to the magnetic field, while ~ 1MeV electrons filled loss cone partially. This consideration explained why precipitating microbursts have lower e-folding energy than that of quasi-trapped electrons, and supports the theory that relativistic electron microbursts that have been observed by satellite in-situ measurement have same origin with ~100 keV electron microbursts that have been usually observed by balloon experiments.