• Title/Summary/Keyword: Solid State Power Amplifier

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A Development of the X-Band 63 Watt Pulsed SSPA for Radar (레이더용 X-대역 63 Watt Pulsed SSPA 개발)

  • Chong, Min-Kil;Na, Hyung-Gi
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.3
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    • pp.380-388
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    • 2011
  • In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

An implementation of 60W X-band Cascade SSPA for Marine Radar System (선박 레이다용 60W X-band Cascade SSPA 구현)

  • Kim, Min-Soo;Jang, Yeon-Gil;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.7 no.1
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    • pp.1-7
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    • 2012
  • In this paper, An X-band solid state power amplifier(SSPA) for pulse compressed microwave signal with 60Watt power and power added efficiency(PAE) above 30% is described. Designed 60Watt high power amplifier(HPA) was implemented by cascade coupled amplifiers, and it is consisted on three stage drive amplifiers with internally matched GaAs FET and one stage main power amplifier with an internally matched GaN HEMT. The designed SSPA has performance with more than total power gain 37dB and output power 48dBm(60-W) in condition of frequency range $9.41{\pm}0.03GHz$, pulse period width under 1ms and duty cycle under 10%. The implemented SSPA can apply to high quality digital marine radar applications with pulse compression technique.

Analysis and Design of the In-Rush Current Protection Circuit for SSPA Power Supply (SSPA용 전원공급기의 돌입전류 보호회로 분석 및 설계)

  • Park, Sang-Hyun;Park, Dong-Chul;Kim, Dae-Kwan
    • Journal of the Korea Institute of Military Science and Technology
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    • v.11 no.5
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    • pp.5-11
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    • 2008
  • Recently developed radars use the solid-state power amplifier to amplify the RF signal. The stability of RF signal directly depends on that of the electric power. So the stable and reliable electric power should be needed. When the electric power switch is tuned on for the first time in order to operate the radar system, the in-rush current is generated because of the capacitive characteristic. The excess in-rush current breaks the element. Therefore, the analysis about the in-rush current to design the electric power system is necessary. In this paper, modeling and simulation on the whole power system is carried out and the necessity of limiting the in-rush current is verified. After the analysis, the circuit to limit the in-rush current is designed and examined to verify the analysis. The circuit is good enough to limit the in-rush current.

Design and Fabrication of X-Band 50 W Pulsed SSPA Using Pulse Modulation and Power Supply Switching Method (펄스 변조 및 전원 스위칭 방법을 혼용한 X-대역 50 W Pulsed SSPA 설계 및 제작)

  • Kim, Hyo-Jong;Yoon, Myoung-Han;Chang, Pil-Sik;Kim, Wan-Sik;Lee, Jong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.4
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    • pp.440-446
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    • 2011
  • In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

Design and Fabrication of Ka-band High Power and Low Loss Waveguide Combiner (Ka 대역 고출력 저손실 도파관 결합기 설계 및 제작)

  • Kim, Hyo-Chul;Cho, Heung-Rae;Lee, Ju-Heun;Lee, Deok-Jae;An, Se-Hwan;Lee, Man-Hee;Joo, Ji-Han;Kwon, Jun-Beom;Jeong, Hae-Chang;Kim, So-Su
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.21 no.3
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    • pp.35-42
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    • 2021
  • The research of amplifier have been actively conducted to replace the Traveling Wave Tube Amplifier (TWTA) in the mmWave. For Solid State Power Amplifiers (SSPA), which combine semiconductor-type devices to obtain high output, Low-loss, high-efficiency combination techniques are required to meet the required output as the output of a single relatively low device is relatively low. In this paper, we design and produce an 8-way waveguide combiner and a reflective loss of more than 20dB and a binding efficiency of 85% or more were identified. Field analysis calculates the critical power inside the combiner. It secured stable Power Ratings and built-in coupler for power monitoring to achieve miniaturization and light weight.

A Study on the solid-state power amplifier for satehite transponders (인공위성 중계기용 고출력 전력증폭기의 구현에 관한 연구)

  • 김대현;여인혁;이두한;홍의석
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.11
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    • pp.2228-2237
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    • 1994
  • This paper describes the development of a Ku-band ($12.25GHz\sim12.75GHz$) SSPA intended as a replacement for TWTAs used in communication satelite transponder. The power stage of the amplifier consists of tow intrmally matched 8W FET divices combined using the branch-line coupler. To operate this stage, the drive stage has been designed with intermally matched 2W, 4W, 8W FET and two medium power FETs. The entire amplifier is made up by a aluminum chassis housing both the RF circuit and the bias circuitry. A regrlator/sequencing circuitry is used for FET biasing. The amplifier results implemented in this way show $41\pm0.3dB$ small-signal gain, 15W saturation power, a typical two tone $IM_3=-21.5dBc$ with single carrier backed off 5dB from saturation, $2^*/dBmax$ AM/PM conversion, and $3.47\pm0.25nsec$ group delay.

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Development of SSPA-based X-band Transmitter with Graceful Degradation (점진적 성능저하 기능을 가지는 X-대역 SSPA 송신장치 개발)

  • Song, Hyeong-Min;Kim, Ji-Deok;Kang, Hyun-Chul;Song, Jae-Gyeong;Park, Chul-Soon;Rhee, Kye-Jin;Lee, Choung-Hyun;Kim, Dong-Gil
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.5
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    • pp.853-862
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    • 2019
  • In this paper, we designed a 4.5kW X-band SSPA transmitter to replace the TWTA search radar transmitter with low MTBF and high maintenance cost. The transmitter is designed for the performance of over 520W average transmission output and 4.0kW maximum transmission output. In particular, by implementing a graceful degradation, it is designed to maintain better performance than conventional TWTA transmitter up to 40% (13 assembly modules) failure level of 200W power amplifier assembly. Through an experiment on the effective range of X-band, the performance of proposed transmitter verified the values of the maximum transmission output 6.1kW, spurious output 69.16dBc, RF pulse rising time 15.2ns and RF pulse falling time 16.3ns. The experiment confirmed the change of output power according to the graceful degradation due to fault injection.

Development of 2-kW Class C Amplifier Using GaN High Electron Mobility Transistors for S-band Military Radars (S대역 군사 레이더용 2kW급 GaN HEMT 증폭기 개발)

  • Kim, Si-Ok;Choi, Gil-Wong;Yoo, Young-Geun;Lim, Byeong-Ok;Kim, Dong-Gil;Kim, Heung-Geun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.3
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    • pp.421-432
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    • 2020
  • This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

Performance improvement of the high speed mobile communication by the predistorter (전치왜곡기로 인한 고속이동통신의 성능향상기법)

  • Lee, Kang-Mi;Shin, Duck-Ho;Kim, Bak-Hyun;Lee, Jun-Ho
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.173-174
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    • 2006
  • High power amplifier (HPA), which is used in transmitter of wireless communication systems, usually works in near saturation point in order to achieve maximum efficiency. In this region, HPA can introduce undesirable nonlinear effects. In this paper, we present a polynomial modeling method for efficient techniques to compensate for nonlinear distortion introduced by nonlinear HPA. Proposed polynomial predistorter inverses actual amplifier. Namely, we derive polynomials of amplifiers from analytical method and the electrical parameters in the data sheet of an actual amplifier and then can derive polynomial predistorter by inversing them. It is an effective and a simple method to compensate nonlinear distortion. SSPA(Solid-state power amplifier) is considered. We also analyze the effects of predistortion on the SER performance of communication system with 16-QAM modulation format. The results have shown the efficiency of this model.

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Relation between IBO and BER in the OFDM Communication System using Predistorter for the Nonlinear Compensation (비선형 보상을 위하여 Predistorter를 사용한 OFDM 통신 시스템에서 IBO와 BER의 관계)

  • 박주석;이강미;유흥균
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.7
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    • pp.692-697
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    • 2004
  • OFDM system is very useful for the multi-path channel and highly bandwidth-efficient system. However, OFDM signal shows the high PAPR so that nonlinear distortion can happen in the HPA(high power amplifier). This paper studies BER performance variation according to IBO(input back off) values when the predistorter is used fur the compensation for the HPA nonlinearity. In case of the SSPA(solid state power amplifier) of nonlinearity parameter p=0.5 and IBO=0㏈, the system with predistorter is poorer than the one without predistorter. But this situation is inverted, if IBO is increased from 0㏈ to 3㏈. So, we can find that there is a threshold value of IBO for the predistorter to effectively compensate for the nonlinear SSPA when the sub-carrier number and p value are changed.