• Journal of Korea Society of Industrial Information Systems
• /
• v.18 no.5
• /
• pp.81-92
• /
• 2013

The satellite includes many release mechanisms such as solar array deployment, antenna deployment, cover to protect contamination in scientific equipment, pyro value of the propulsion subsytem, and bypass device in Li-Ion cell module. A drive the initiators is a critical to the successful mission because the initiators of release mechanism driving by the pyrotechnic circuit is operated in single short. The pyrotechnic circuit has to provide switching network for safety. A typical switching network has defect consisting of high current rating fire switch to handle switching transient current during fire the initiator. The pyrotechnic circuit is required some form of power conditioning to reduce the peak power demanded from the bus if the initiators are to be fired from the main bus. This paper design a pyrotechnic circuit synchronized to the fire-command to activate the fire switch to overcome use high current rating fire switch to handle switching transient current during fire the initiator. The pyrotechnic circuit provides a current limited widow pulse for fire current synchronized to the fire-command to insure that fire switch will only carry the current but never switch it. The current limited widow pulse for fire current can be possible to use low current rating and light mass switch in switching network. The current limit function in the pyrotechnic circuit reduces supply voltage to initiator and provides the effect of power conditioning function to reduce peak bus power. The pyrotechnic circuit to apply satellite development on geostationary orbit is verified the function by test in development model.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.59.1-59.1
• /
• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.87-87
• /
• 2010

Photoelectrochemical (PEC) systems are promising methods of producing H2 gas using solar energy in an aqueous solution. The photoelectrochemical properties of numerous metal oxides have been studied. Among them, the PEC systems based on TiO2 have been extensively studied. However, the drawback of a PEC system with TiO2 is that only ultraviolet (UV) light can be absorbed because of its large band gap (3.2 - 3.4 eV). Two approaches have been introduced in order to use PEC cells in the visible light region. The first method includes doping impurities, such as nitrogen, into TiO2, and this technique has been extensively studied in an attempt to narrow the band gap. In comparison, research on the second method, which includes visible light water splitting in molecular photosystems, has been slow. Mallouk et al. recently developed electrochemical water-splitting cells using the Ru(II) complex as the visible light photosensitizer. the dye-sensitized PEC cell consisted of a dye-sensitized TiO2 layer, a Pt counter electrode, and an aqueous solution between them. Under a visible light (< 3 eV) illumination, only the dye molecule absorbed the light and became excited because TiO2 had the wide band gap. The light absorption of the dye was followed by the transfer of an electron from the excited state (S*) of the dye to the conduction band (CB) of TiO2 and its subsequent transfer to the transparent conducting oxide (TCO). The electrons moved through the wire to the Pt, where the water reduction (or H2 evolution) occurred. The oxidized dye molecules caused the water oxidation because their HOMO level was below the H2O/O2 level. Organic dyes have been developed as metal-free alternatives to the Ru(II) complexes because of their tunable optical and electronic properties and low-cost manufacturing. Recently, organic dye molecules containing multi-branched, multi-anchoring groups have received a great deal of interest. In this work, tri-branched tri-anchoring organic dyes (Dye 2) were designed and applied to visible light water-splitting cells based on dye-sensitized TiO2 electrodes. Dye 2 had a molecular structure containing one donor (D) and three acceptor (A) groups, and each ended with an anchoring functionality. In comparison, mono-anchoring dyes (Dye 1) were also synthesized. The PEC response of the Dye 2-sensitized TiO2 film was much better than the Dye 1-sensitized or unsensitized TiO2 films.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.78.2-78.2
• /
• 2010

Cu(In,Ga)Se2 (CIGS)박막태양전지는 간단한구조와 가격경쟁력 및 고효율화 가능성에 대한 기대감에 의해 많은 연구가 수행되어오고 있다. 특히 높은 흡수계수와 적절한 밴드갭, 큰 결정크기와 같은 물질의 특성들이 장점으로 작용하고 있기 때문이다. 또한 CIGS박막태양전지는 다른 태양전지에 비해 광열화가 적다는 장점도 가지고 있다. CIGS 박막은 CuInSe2내의 In 사이트에 Ga을 도핑함으로서 형성이 되는데 그때의 밴드갭은 약 1.4eV이며 이를 형성하기 위해 많은 방법들이 제안되고 있는데, CIGS박막 형성 시 가장 중요시 여겨야 될 인자는 구성원소로부터 최적화된 조성비를 찾는 것이다. 이러한 관점에서 볼때 evaporation법이나 sputtering법같은 진공방식의 공정법이 비진공방식에 비해 최적의 조성비를 찾는 것이 수월할 것으로 생각된다. selenization을 하기전에, 동시증착이나 다층박막형성을 통해 Cu-In-Se의 조합이 일반적으로 이루어진다. 어떤방법이든 Se의 부가적인 공급이 이루어지는데 시작 전구체의 조합에서 그 해법을 제시하는 것에 대한 논의가 많이 부족한 현실로서, CuInSe2의 단일전구체에 의한 박막형성과 특성평가에 대해 구체적인 논의가 필요하다. 본 실험에서는 Cu-In-Se 전구체를 CuInSe2 단일 타겟에서부터 RF 마그네트론 스퍼터링법을 이용하여 박막증착을 하여 Se의 Rapid Thermal Process(RTA)법을 통해 Se이 순차적으로 공급되었다. 이때 형성되는 박막의 태양전지 흡수층 적용을 위한 광학적, 전기적 및 구조적에 대한 논의된다. Soda lime glass(SLG)와 Corning 1737 유리를 기판으로 하여 아세톤-에탄올을 이용, 초음파세척을 실시하였다. 스퍼터 공정을 하기전에 흡착된 물분자를 제거하기 위하여 약 30분간 $120^{\circ}C$로 열을 가해주었으며, 공정을 위한 총 아르곤 가스의 양은 약 50sccm이며 이때의 공정압력은 20mtorr로 고정하였다. 우선 RF power와 기판온도에 따른 단일전구체 형성을 관찰하기 위하여 각각 30~80W, RT~$400^{\circ}C$로 변화를 주어 박막을 형성한 후 모든 sample에 대하여 $500^{\circ}C$분위기에 effusion cell을 이용하여 Se 분위기에서 결정화를 실시하였다. 샘플의 두께는 Surface profiler로 측정하였고 단면은 전자주사현미경으로 관찰되었다. 동시에 SEM이미지를 통하여 morphology와 grain size 및 EDX를 통하여 조성분석을 하였다. 밴드갭, 투과율 및 흡수계수는 UV-VIS-NIR분광분석법을 통하여 수행되었으며, 전기적 특성분석을 위해 4-point-probe와 Hall effect측정을 수행하였다. 공정변수에 따른 단일타겟으로 얻어 결정화된 CuInSe2박막의 자세한 결과와 논의에 대하여 발표한다.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.54-54
• /
• 2010

In this study, the correlation between temperature and the gel-content of the module were analyzed through experiments. Amorphous thin-film solar cell used in this experiment has a visible light transmission performance of 10%. In addition, ethylene vinyl acetate(EVA) film and the clear glass have been used for the modulation. The most important process is to laminate the module in the manufacturing process of BIPV(Building integrated photovoltaic) module. Setting parameters of laminator in the lamination process are temperature, pressure and time. Setting conditions significantly affect the durability, watertightness and airtightness of module. The most important factor in the setting parameters is temperature to satisfy the gel-contents. The bottom and top surface temperature of module are measured according to setting temperature of laminator. The results showed $145^{\circ}C$ of max temperature of the bottom surface and $128^{\circ}C$ of max temperature of top surface on the module at the temperature condition of $160^{\circ}C$. And at the another temperature condition of laminator with $150^{\circ}C$, the max temperature do bottom and top are $117^{\circ}C$ and $134^{\circ}C$ respectively. The temperature difference between bottom and top of the module occurred, that is because heat has been blocked by the clear glass and the bottom of the cells absorb the heat from the laminator. In this particular, the temperature difference between setting temperature of the laminator and the surface temperature of the module showed $15^{\circ}C$, because the heat of laminator plate is transferred to the surface of the module and heat is lost at this time. As a results, gel-content showed 94.8%, 88.7% and 81.7% respectively according to the setting temperature $155^{\circ}C$, $150^{\circ}C$ and $145^{\circ}C$ of the laminator. In conclusion, the surface temperature of module increases, the gel-contents is relatively increased. But if the laminator plate temperature is too high, the gel-content shows rather decline in performance. Furthermore, the temperature difference between setting temperature and the surface temperature of the module is affected by laminating machine itself and the temperature of module should be considered when setting the laminator.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.20 no.3
• /
• pp.107-112
• /
• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.404-404
• /
• 2016

태양전지 제작 시 표면에 피라미드 구조를 형성하면 입사되는 광의 흡수를 높여 광 생성 전류의 향상에 기여한다. 일반적인 KOH를 이용한 습식 표면조직화 공정은 평균 10%의 반사율을 보였으며, 유도 결합 플라즈마를 이용한 RIE 공정은 평균 5.4%의 더 낮은 반사율을 보였다. 그러나 RIE 공정을 이용한 표면조직화는 낮은 반사율과 서브 마이크론 크기의 표면 구조를 만들 수 있지만 플라즈마 조사에 의한 표면 손상이 많이 발생하게 된다. 이러한 표면 손상은 태양전지 제작 시 표면에서 높은 재결합 영역으로 작용하게 되어 포화 전류(saturation currents, $J_0$)를 증가시키고 캐리어 수명(carrier lifetime, ${\tau}$)을 낮추는 결함 요소로 작용한다. 이러한 플라즈마에 의한 표면 손상을 제거하기 위해 HF, HNO3, DI-water를 이용하여 DRE(Damage Remove Etching) 공정을 진행하였다. DRE 공정은 HF : DI-water 솔루션과 HNO3 : HF : DI-water 솔루션의 두 가지 공정을 이용하여 공정 시간을 가변하며 진행하였다. 포화전류($J_0$), 캐리어 수명(${\tau}$), 벌크 캐리어 수명(Bulk ${\tau}$)을 비교를 하기위해 KOH, RIE, RIE + DRE 공정을 진행한 세 가지 샘플로 실험을 진행하였다. DRE 공정을 적용할 경우 공정 시간이 지날수록 반사도가 높아지는 경향을 보였지만, 두 번째의 최적화된 솔루션 공정에서 $2.36E-13A/cm^2$, $42{\mu}s$의 $J_0$, Bulk ${\tau}$값과 가장 높은 $26.4{\mu}s$의 ${\tau}$를 얻을 수 있었다. 이러한 결과는 오제 재결합(auger recombination)이 가장 많이 발생하는 지역인 표면과 불균일한 도핑 영역에서 DRE 공정을 통해 나아진 표면 특성과 균일한 도핑 프로파일을 형성하게 되어 재결합 영역과 $J_0$가 감소 된 것으로 판단된다. 높아진 반사도의 경우 $SiN_x$를 이용한 반사방지막을 통해 표면 반사율을 1% 이내로 내릴 수 있어 보완이 가능하였다. 본 연구에서는 RIE 공정 중 플라즈마에 의해 발생하는 표면 손상 제거를 통하여 캐리어 라이프 타임의 향상된 조건을 찾기 위한 연구를 진행하였으며, 기존 RIE 공정에 비해 반사도의 상승은 있지만 플라즈마로 인한 표면 손상을 제거하여 오제 재결합에 의한 발생하는 $J_0$를 낮출 수 있었고 높은 ${\tau}$값인 $26.4{\mu}s$의 결과를 얻어 추후 태양전지 제작에 향상된 효율을 기대할 수 있을 것으로 기대된다.

• 한국신재생에너지학회:학술대회논문집
• /
• 2005.11a
• /
• pp.561-566
• /
• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.8 no.8
• /
• pp.1247-1255
• /
• 2013

In this paper, We proposes multipurpose function electronic measurement reference station prototype system based on LED and Gyro Sensor. This system have developed to possible with real time data collection and landscape illumination and surrounding diastrophism monitoring for that analyze problems of existing planted reference station. Hardware for the proposed system consists of a gyro sensor module to detect diastrophism, GPS module to process location information, environment sensor module to process surrounding environmental data and CDMA wireless data communication to send the collected data to server. In addition, this paper intends to enhance system management and future usability in a way that applies LED, QR-code, RFID and Solar cell module to outer side of electronic measurement reference station to improve usability of H/W for electronic measurement reference station. Lastly, this paper conducted current amount evaluation to supply stabilized electricity with its various functions in the proposed multipurpose function electronic measurement reference station and it's proved that this system can be stably operated with its electricity loss factor of 2.29% loss factor. And this paper conducted a qualitative comparison with existing electronic measurement reference station system in order to evaluate superiority of the proposed electronic measurement reference station.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.364-364
• /
• 2013

현재 투명전극은 주로 ITO를 사용하고 있으며, ITO는 인듐산화물(In2O3)과 주석산화물(SnO2)이 9대 1의 비율로 혼합된 화합물로 인듐이 주성분이다. 따라서 ITO 사용량의 증가는 인듐의 수요 증가를 이끌어 2003년 이후 인듐 잉곳의 가격이 급등하였다. LCD에 응용되는 금속재료의 가격추이를 비교해보면, 인듐이 가장 큰 변화를 보이고 있으며, 2005년 인듐 가격은 2002년 대비 1,000% 이상 상승하였다가 2007년 이후 500%p 하락하여 2008년 2월 22일 기준으로 톤당 49만 달러에 거래되고 있다. 같은 기간 동안 알루미늄의 가격은 76.6% 상승하였으며 구리는 394%, 주석은 331% 상승하였다. 이러한 인듐의 가격 상승폭은 동일한 기간 동안 다른 금속 재료와 비해 매우 크며, 단위 질량당 가격도 20배 이상 높은 수준이다. ITO의 주성분인 인듐의 이러한 가격의 급등 및 향후 인듐의 Shortage 예상으로 인해 ITO 대체재 확보의 필요성이 증가되고 있다. 태양광 발전산업에서 현재 주류인 결정질 실리콘 태양전지의 변환효율은 꾸준히 향상되고 있으나, 태양전지의 가격이 매년 서서히 하강되고 있는 실정에서 결정질 실리콘 가격의 상승 등으로 고부가 가치 산업유지에 어려움이 있으며, 생산 원가를 낮출 수 있는 태양전지 제조기술로는 2세대 태양전지로 불리는 박막형이 현재의 대안으로 자리매김하고 있으며, 박막태양전지 산업분야가 현재의 정부정책 지원 없이 자생력을 갖추고 또한 시장 경쟁력을 확보하기 위해서는 박막태양전지 개발과 더불어 저가의 재료개발도 시급한 상황이다. 본 연구에서는 In-line magnetron sputtering system을 사용하여 소다라임 유리기판 위에 박막태양전지용 투명전도성 ZnO(Al) 박막 및 ZnO(AlGa) 박막을 각각 제작하였다. 각각 박막의 표면특성 및 성장구조, 결정성을 조사하였고, 또한 전기적 특성, 홀이동도와 개리어농도, 박막의 두께, 광투과율 특성을 연구하였다. ZnO(Al)박막, ZnO(AlGa)박막 대한 각각 특성을 평가하고 그 결과들을 논하고자 한다.