• Title/Summary/Keyword: Solar light

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Fabrication of TiO2 thin films for perovskite solar cell using RF magnetron sputter

  • Cho, Kyungjin;Lee, Seunghun;Kim, Seongtak;Chung, Teawon;Lee, Sang-won;Kim, Soo Min;Park, Hyomin;Kang, Yoonmook;Lee, Hae-seok;Kim, Donghwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.305.1-305.1
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    • 2016
  • 페로브스카이트 태양전지는 차세대 태양전지로써 몇 년 사이에 매우 큰 폭으로 효율이 증가하고 있으며 활발한 연구가 진행되고 있다. 페로브스카이트의 태양전지의 구조는 전자전도체, 페로브스카이트 광흡수체, 정공전도체, 전극으로 구성된다. 전자전도체는 전자 포집성이 우수한 다공성 TiO2 층과 TiO2 박막 층으로 구성된다. 균일한 박막 TiO2를 형성하는 것은 페로브스카이트 태양전지의 개방전압 특성에 기여한다. TiO2 박막을 제조하는 방법으로써 용액을 사용한 스핀 코팅 법은 간편하게 제조가 가능하나, 일정한 두께의 박막을 형성하지 못하고 균일하지 못하는 단점을 가진다. 본 연구에서는 RF 마그네트론 스퍼터를 이용하여 보다 균일한 TiO2 박막을 제조하였다. X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Light IV, Quantum Efficiency (QE)로 분석하였다. 이를 통하여 제조방법 차이에 따른 페로브스카이트 태양전지의 영향을 분석하였다.

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Characterization of carrier transport and trapping in semiconductor films during plasma processing

  • Nunomura, Shota;Sakata, Isao;Matsubara, Koji
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.391-391
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    • 2016
  • The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

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Improvement of haze ratio of DC-sputtered ZnO:Al thin films through HF vapor texturing

  • Kang, Junyoung;Park, Hyeongsik;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.319.1-319.1
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    • 2016
  • Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

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Infrared Signature Analysis on a Flat Plate by Using the Spectral BRDF Data (파장별 BRDF 데이터를 이용한 평판의 적외선 복사휘도 특성 분석)

  • Choi, Jun-Hyuk;Kim, Dong-Geon;Kim, Jung-Ho;Kim, Tae-Kuk
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.38 no.6
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    • pp.577-585
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    • 2010
  • This paper is a part of developing a software that predicts the infrared signal emitted from a ground object by considering solar irradiation. The radiance emitted from a surface can be calculated by using the temperature and optical characteristics of the surface object. The bidirectional reflectance distribution function (BRDF) is defined as the ratio of reflected radiance to incident irradiance. It is a very important surface reflection property that decides the reflected radiance from the object. In this paper, the spectral radiance received by a remote sensor over the mid-wave infrared(MWIR), and the long-wave infrared(LWIR) regions are computed and compared each other for several different materials. The results show that the optical surface properties such as the BRDF and the emissivity of the object surface can play a major role in generating the infrared signatures of various objects, and the largest infrared signal may reach up to 10 times the smallest one when the infrared signals obtained from a flat plate with different surface conditions under the sun light.

Effect of Plasticizer on Electrolyte Membranes for Dye Sensitized Solar Cells (염료감응형 태양전지를 위한 고분자 전해질막에서의 가소제의 효과)

  • Cho, Doo-Hyun;Jung, Yoo-Young;Yun, Mi-Hye;Kwon, So-Young;Koo, Ja-Kyung
    • Membrane Journal
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    • v.20 no.1
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    • pp.13-20
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    • 2010
  • Using poly(ethylene oxide) (PEO) as a polymer host, poly(ethylene glycol) (PEG) as a plasticizer, potassium iodide and iodine as sources of $I^-/{I_3}^-$ PEO-PEG-KI/$I_2$ polymer gel electrolytes were prepared. Based on the polymer gel electrolytes, solid-state dye-sensitized solar cell(DSSC)s were fabricated. The content of PEG in the electrolyte was changed from 0 to 85%. The electrolyte showed self-supporting form through whole range of the PEG content. As the PEG content increased, the ionic conductivity and ${I_3}^-$ diffusivity increased and the light-to electrical energy conversion efficiency increased under irradiation of 100 $mWcm^{-2}$ simulated sunlight.

Metal Grids Embedded Transparent Conductive Electrode with Flexibility and Its Applications

  • Jung, Sunghoon;Lee, Seunghun;Kim, Jong-Kuk;Kang, Jae-Wook;Kim, Do-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.314-314
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    • 2013
  • Recently, flexibility is one of the hottest issues in the field of electronic devices. For flexible displays or solar cells, a development of transparent conductive electrodes (TCEs) with flexibility, bendability and foldability is an essential element. Hundreds of nanometers indium-tin-oxide (ITO) films have been widely used and commercialized as a transparent electrode, but their brittleness make them difficulty to apply flexible electronics. Many researchers have been studying for flexible TCEs such as a few layers of graphene sheets, carbon nanotube networks, conductive polymer films and combinations among them. Although gained flexibility, their transmittance and resistivity have not reached those of commercialized ITO films. Metal grids electrode cannot act as TCEs only, but they can be used to lower the resistance of TCEs with few losses of transmittance. However, the possibility of device shortage will be rise at the devices with metal grids because a surface flatness of TCEs may be deteriorated when metal grids are introduced using conventional methods. In our research, we have developed hybrid TCEs, which combined tens of nanometers ITO film and metal grids which are embedded in flexible substrate. They show $13{\Omega}$/${\Box}f$ sheet resistance with 94% of transmittance. Moreover, the sheet resistance was maintained up to 1 mm of bending radius. Also, we have verified that flexible organic light emitting diodes and organic solar cells with the TCEs showed similar performances compared to commercial ITO (on glass substrate) devices.

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Characterization of Atomic-Layer Deposited ZnSnO Buffer Layer for 18%- Efficiency Cu(In,Ga)Se2 Solar Cells (18% 효율 Cu(In,Ga)Se2 박막태양전지용 ZnSnO 버퍼층의 원자층 증착법 및 분석)

  • Kim, Sun Cheul;Kim, Seung Tae;Ahn, Byung Tae
    • Current Photovoltaic Research
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    • v.3 no.2
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    • pp.54-60
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    • 2015
  • ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.

Sol-gel Derived Nano-glass for Silicon Solar Cell Metallization (솔-젤법에 의해 제조된 실리콘 태양전지 전극형성용 나노 글래스)

  • Kang, Seong Gu;Lee, Chang Wan;Chung, Yoon Jang;Kim, Chang-Gyoun;Kim, Seongtak;Kim, Donghwan;Lee, Young Kuk
    • Current Photovoltaic Research
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    • v.2 no.4
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    • pp.173-176
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    • 2014
  • We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

Study on Relation between $H_2$ Evolution and Photoelectrical Properties of Photoanode (광어노드의 수소 제조와 광전기 특성에 관한 상관관계 연구)

  • Bae, Sang-Hyun;Kang, Joon-Won;Shim, Eun-Jung;Yoon, Jae-Kyung;Joo, Hyun-Ku
    • Transactions of the Korean hydrogen and new energy society
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    • v.18 no.3
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    • pp.244-249
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    • 2007
  • The present work considers the concept of enzymatic photoelectrochemical generation of hydrogen through water splitting using a Xe lamp as a source of light. A solar cell was applied to the system in order to shift the level of electrochemical energy of the system, resulting in the rate of hydrogen production at $43\;{\mu}mol/(cm^2{\times}hr)$ in cathodic compartment with an anodized tubular $TiO_2$ electrode(ATTE, $5^{\circ}C$/1hr in 0.5 wt% HF-$650^{\circ}C$/5hr). The trend of the rate of hydrogen production, for the ATTEs with different annealing temperature from $350^{\circ}C$ to $850^{\circ}C$, fairly well coincided with the photoelectrical properties measured by potentiostat. The actual chemical bias through imposition of two electrolytes of different pHs between anode(13.68) and cathode(7.5) was 0.24eV.

Evolution of cometary dust particles to the inner solar system: Initial conditions, mutual collision and final sinks

  • Yang, Hongu;Ishiguro, Masateru
    • The Bulletin of The Korean Astronomical Society
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    • v.42 no.2
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    • pp.48.3-49
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    • 2017
  • Interplanetary space of the solar system contains a large number of dust particles, referred to as Interplanetary Dust Particles (IDPs) cloud complex. They are observable through meteors and zodiacal lights. The relative contribution of possible sources to the IDPs cloud complex was an controversial topic, however, recent research (Yang & Ishiguro, 2015 and references therein) suggested a dominance of cometary origin. In this study, we numerically investigated the orbital evolution of cometary dust particles, with special concerns on different evolutionary tracks and its consequences according to initial orbits, size and particle shape. The effect of dust particle density and initial size-frequency distribution (SFD) were not decisive in total cloud complex mass and mass supply rate, when these physical quantities are confined by observed zodiacal light brightness and dust particle SFD at 1 au. We noticed that, if we assume the existence of fluffy aggregates discovered in the Earth's stratosphere and the coma of 67P/Churyumov-Gerasimenko, the required mass supply rate decreases significantly. We also found out that close encounters with planets (mostly Jupiter) are the dominating factor of the orbital evolution of dust particles, as the result, the lifetime of cometary dust particles are shorter than Poynting-Robertson lifetime (around 250 thousand years). As another consequence of severe close encounters, only a small fraction of cometary dust particles can be transferred into the orbit < 1 au. This effect is significant for large size particles of ${\beta}$ < 0.01. The exceptional cases are dust particles ejected from 2P/Encke and active asteroids. Because they rarely encounter with Jupiter, most dust particles ejected from those objects are governed by Poynting-Robertson effect and well transferred into the orbits of small semimajor axis. In consideration of the above effects, we directly estimated probability of mutual collisions between dust particles and concluded that mutual collisions in the IDPs cloud complex is mostly ignorable, except for the case of large sized particles from active asteroids.

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