• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 춘계학술발표대회
• /
• pp.24.1-24.1
• /
• 2009

The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to $750^{\circ}C$, while it was smoothed with more increasing of annealing temperature due to the evaporation of buffer layer. It was found that the roughest surface of buffer layer improved the structural and optical properties of ZnO nanorods. For the post annealing case, the hydrothermally grown ZnO nanorods were annealed with various temperatures ranging from 450 to $900^{\circ}C$. Similarly in the buffer layer annealing case, the post annealing enhanced the properties of ZnO nanorods with increasing of annealing temperature up to $750^{\circ}C$. However, it was degraded with further increasing of annealing temperature due to the violent movement of atoms and evaporation. Finally, the buffer layer annealing and post annealing treatment could efficiently improve the properties of hydrothermally grown ZnO nanorods. The morphology and structural properties of ZnO nanorods grown by the hydrothermal synthesis were measured by atomic force microscopy (AFM), field emission scanning electron microscopy (SEM), and x-ray diffraction (XRD). The optical properties were also analyzed by photoluminescence (PL) measurement.

• 한국재료학회지
• /
• 제12권1호
• /
• pp.36-43
• /
• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제53권5호
• /
• pp.237-241
• /
• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

• 한국정보통신학회논문지
• /
• 제18권2호
• /
• pp.311-317
• /
• 2014

해상 브이는 해상 기상상태에 따라 운동 특성이 변한다. 브이의 운동특성은 브이에 설치된 안테나, 전력공급용 태양광 발전시스템 등의 성능에도 영향을 미친다. 그러므로 브이의 운동특성을 파악하여 브이 관리 및 상태 확인에 활용하는 것은 중요하다. 브이 움직임 감시 시스템은 자이로 센서를 이용하여 등부표의 운동 상태를 측정하며 측정된 값은 신호처리 알고리즘에 따라 육상의 PC에 전송한다. 본 연구에서는 움직임 감시 시스템을 적용하여 해상용 브이의 상태를 체계적으로 감시 및 관리 메카니즘을 구축하고자 하는 것이 연구의 목적이다. 본 논문에서 설계한 브이용 움직임 감시시스템은 향후 브이의 상태를 실시간으로 파악하거나 해상구조물의 움직임을 예측하는 연구 분야 등에 적용 유용하게 사용될 것이다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.178-178
• /
• 2007

II-VI의 넓은 밴드갭 (3.37 eV)을 가지는 ZnO는 solar cells, transparent conductive electrodes, ultraviolet light emitters, and chemical sensors 등에 응용되고 있다. 특히 고효율 ZnO계 발광 소자 구현을 위하여 MgO (7.7eV), CdO (2.0eV) 등의 고용을 통한 밴드갭을 엔지니어링 하며, 단파장 영역의 광원을 확보하기 위하여 MgO 첨가를 통한 밴드갭 에너지를 증가시키는 방향으로의 연구가 활발하다. 그러나 ZnO의 wurtzite 구조와 MgO의 rocksalt 구조의 상이한 결정구조로 인하여 Mg의 고용한계는 4 at. %, 4.1 eV 알려져 있다. 본 실험에서는 p-type Si (100), c-sapphire (0002)과 GaN 기판 위에 MgO (99.999 %)와 ZnO (99.999 %) 두가지 타겟을 사용하여 RF co-스퍼터링법으로 ZnMgO 박막을 증착 하였다. 이때 ZnO 타겟의 power 밀도는 고정 시키고 MgO 타겟의 power 밀도를 변화 시키며 Mg의 함량을 조절하여 그에 따른 광학적 구조적 특성의 변화를 연구 하였다. 성장된 ZnMgO 박막은 MgO 타겟의 power 밀도가 증가할 때 Mg의 함량이 10 at. %까지 증가 하며, 그에 따른 표면의 거칠기 및 입계 크기가 감소하며, 박막의 성장속도 또한 감소함을 SEM과 AFM을 통하여 알 수 있었다. XRD를 동하여 ZnMgO 박막의 (0002) peak의 위치는 $34.50^{\circ}{\sim}34.7^{\circ}$로 오른쪽으로 이동하며, c-축으로 성장하였음을 알 수 있다. PL과 UV룰 동하여, Mg의 함량이 증가 할수록 박막의 밴드갭 에너지는 3.2 eV에서 4.1 eV 로 증가하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.54-54
• /
• 2010

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation(REDOX) reaction will occur on the ZnO surface and generate ${O_2}^-$ and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into $CO_2$ and $H_2O$. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with $TiO_2$. $Zn(OH)_2$ was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.252.2-252.2
• /
• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• 한국재료학회지
• /
• 제22권10호
• /
• pp.562-568
• /
• 2012

Metal nanowires can be coated on various substrates to create transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these metal nanowire based transparent conductive films is that the resistance between the nanowires is still high because of their low aspect ratio. Here, we demonstrate high-performance transparent conductive films with silver nanofiber networks synthesized by a low-cost and scalable electrospinning process followed by two-step sequential thermal treatments. First, the PVP/$AgNO_3$ precursor nanofibers, which have an average diameter of 208 nm and are several thousands of micrometers in length, were synthesized by the electrospinning process. The thermal behavior and the phase and morphology evolution in the thermal treatment processes were systematically investigated to determine the thermal treatment atmosphere and temperature. PVP/$AgNO_3$ nanofibers were transformed stepwise into PVP/Ag and Ag nanofibers by two-step sequential thermal treatments (i.e., $150^{\circ}C$ in $H_2$ for 0.5 h and $300^{\circ}C$ in Ar for 3 h); however, the fibrous shape was perfectly maintained. The silver nanofibers have ultrahigh aspect ratios of up to 10000 and a small average diameter of 142 nm; they also have fused crossing points with ultra-low junction resistances, which result in high transmittance at low sheet resistance.

• 한국컴퓨터정보학회논문지
• /
• 제17권2호
• /
• pp.23-29
• /
• 2012

최근에는 태양광 및 연료 전지 등 신재생 에너지의 경우 대부분이 직류에너지원으로 발전하고 있으며 보급을 위해서는 이를 적절히 활용하는 방안이 필요하다. 이 경우 직류 전용 조명 시스템으로의 활용이 주 대안이 될 수 있다. 개발하고자 하는 태양에너지를 이용한 전원공급장치와 관련한 유사 시스템은 주로 태양광 패널을 컨트롤러를 포함한 충전 키트와 배터리를 서로를 각각 연결하여사용하는 형태로 되어 있다. 이것을 본 연구에서는 태양광패널과 일체형으로 연결하여 전기를 효율적으로 충전하고, 사용할 수 있도록 단일 형태의 독립된 전원공급장치를 구성한다. 이와 함께 직류 전원을 사용한 전자식 안정기 모듈을 램프와 분리되도록 일체형 전자식 안정기의 삼파장 DC 램프 모듈을 개발한다. 개발한 일체형의 DC 램프 모듈은 ON/OFF 버튼으로 램프의 점등과 소등이 가능하며, 사용하다가 램프나 안정기의 교체 시기가 되었을 경우 부분 교체만으로도 반영구적인 사용이 가능하도록 개발한다.

• 한국인터넷방송통신학회논문지
• /
• 제21권6호
• /
• pp.123-128
• /
• 2021

직류 배전시스템의 보급이 증가됨에 따라 이에 따른 고장 발생 및 화재 사고도 증가하고 있고 특히 스마트 그리드의 구성 요소인 ESS 화재 사고, 직류 시스템인 태양광 발전 시스템의 화재 사고는 신재생에너지의 보급이 급격하게 증가하고 동시에 사용 연수 10년 이상의 노후 시설이 많아짐에 따라, 시스템 구성 요소 간의 전기적인 접속의 문제들로 발생하고 있다. 이로 인해 유발된 빛과 열을 방출하여 직접적인 화재의 원인이 될 수 있는 아크가 화재의 한 원인으로 지적되고 있다. 따라서 이러한 아크 결함의 문제는 기존의 과전류차단기와 누전차단기로는 아크사고를 사전에 차단할 수 없는 실정이며 대규모 유틸리티 시스템뿐만 아니라 소규모 주거 시스템에서도 인간의 안전에 중대한 위협이 될 수 있기에 아크사고에 대한 대책이 필요하다. 본 논문에서는 국제표준화에 만족하는 시험장비 개발과 아크 발생에 따른 고장 및 화재를 보호하기 위한 직류 아크 Generator를 개발 하고자 한다.