• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 전문대학교육위원
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• pp.110-113
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• 2004

PV model is presented based on the shockley diode equation. The simple model has a photo-current source, an single diode junction and a series resistance and includes temperature dependences. An accurate PV module electrical model is presented, matching with boost converter MPPT strategy and demosnstarted in Matlab for a typical general purpose solar cell. Given solar insolation and temperature, the model returns current vector and MPP.

• 한국산학기술학회논문지
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• 제12권2호
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• pp.847-851
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• 2011

태양광 발전 시스템은 친환경성을 바탕으로 설치용량이 증가하고 있으며 효율 개선을 위한 연구가 활발하다. 고 효율 시스템 설계를 위해서는 태양전지 패널의 출력특성을 정확히 파악하는 것이 중요하다. 태양전지 패널은 단일 다이오드 모델로 물리적 특성을 표현할 수 있으나, 정확한 파라미터를 얻는 것은 여러 단계의 측정과 수치해석 등의 복잡한 과정을 거쳐야 한다. 본 논문에서는 패널 제조사의 데이터 시트에 제공되는 태양전지 패널의 I-V 특성곡선을 기반으로 패널의 단일 다이오드 모델의 특성 파라미터를 추출하는 방법을 제시하였다. 제시한 방법의 검증을 위하여, Simulink의 Solar Cell 블록에 추출한 파라미터를 입력하여 출력을 측정하고, 데이터 시트와 오차를 계산하였다.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.143-145
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• 2009

The electrical and photovoltaic properties of single junction silicon quantum dot solar cells are investigated. A prototype solar cell with an effective area of 4.7 $mm^2$ showed an open circuit voltage of 394 mV and short circuit current density of 0.062 $mA/cm^2$. A diode model with series and shunt resistances has been applied to characterize the dark current-voltage data. The photocurrent of the quantum-dot solar cell was found to be strongly dependent on the applied voltage bias, which can be understood by consideration of the conduction mechanism of the activated carriers in the quantum dot imbedded material.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• Journal of Astronomy and Space Sciences
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• 제36권2호
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• pp.69-74
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• 2019

Spacecraft requires sufficient power in orbit to perform its mission. So as to comply with system requirements, the sufficient power should be made by a solar cell array by photovoltaic power conversion. A life time of space program depends on its mission considering parts reliability and parts grade. Based on the mission life time, power equipment might be designed to meet specifications. In outer space, solar cell array might generate the dc power by photovoltaic conversion effects and GaInP/GaAs/Ge solar cells are used in this study. Space programs that require more than five years should select parts for high reliability applications. Therefore, reliability analysis for high reliability applications should be performed to check its fulfilment of the requirements. This program should also require more five years for its mission and we performed its analysis using parts count method (PCM) for its reliability. Finally, we performed reliability analysis and obtained quantitative figures found out 99.9%. In this study, we presented the reliability analysis of the 300 W GaInP/GaAs/Ge solar cell array.

• 전기학회논문지
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• 제58권1호
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• pp.100-106
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• 2009

A novel 8 V DC power source with an external series-parallel connection of 50 Dye-sensitized Solar Cells (DSCs) has been proposed. One DSC has the optimized length to width ratio of $5.2{\times}2.6\;cm$ and an active area $8\;cm^2$ ($4.62{\times}1.73\;cm$) which attained a conversion efficiency of 4.02%. From the electrochemical impedance spectroscopic analysis, it was found that the resistance elements related to the Pt electrode and electrolyte interface behave like that of diode and the series resistance corresponds to the sum of the other resistance elements. Surface morphology and sheet resistance of Pt counter electrode did not degrade the performance of the cell. This novel 8V-0.33A DC power source shows stable performance with an energy conversion efficiency of 4.24% under 1 sun illumination (AM 1.5, Pin of $100\;mW/cm^2$).

• 센서학회지
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• 제5권5호
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• pp.1-10
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• 1996

EFG Si 태양전지를 전류-전압, 표면광전압, 전자빔유도_전류, 전자미세프로브, 전자역산란의 여러 가지 기술을 이용하여 분석하였다. 전류-전압 그래프를 여러 온도에서 측정한 결과 EFG-Si 태양전지는 전압에 따라 변하는 shunt 저항을 가진 것이 밝혀졌다. 이러한 shunt 저항은 precipitate와 grain boundary에 의해 생긴 것으로 공간전하영역 내의 불순물 에너지 준위로 tunneling에 의해 이동한 캐리어의 재결합으로 일어난 결과이다. 전류-전압 과 표면광전압 기술을 결합하면 태양전지의 pn접합과 기판 (substrate)을 동시에 분석할 수 있다. Diode ideality factor와 표면 광전압은 Pn접합의 특성을, 소수캐리어 확산거리는 substrate특성을 표시한다. EFG 태양 전지를 분석한 결과, 전압에 따라 변하는 shunt 저항은 효율에 따라 정도 차이는 있지만 모든 시편에서 발견되며, 태양전지의 성능을 저하시키는 중요한 원인 중의 하나가 된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.394-394
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• 2009

Water solubility of conjugated polymers may offer many applications. Potential applications of water-soluble conjugated polymers include the polymer light-emitting diode and new materials for nano and micro hollow-capsules, and bio- or chemo-sensors. We synthesized neutral polyfluorenes containing bromo-alkyl groups by the palladium catalyzed Suzuki coupling reaction. Bromo-alkyl side groups in neutral polyfluorenes were quaternized by tri-methyl amine solution. The electrochemical and optical properties of water-soluble conjugated polymers are discussed. This novel synthesized water-soluble conjugated polymers were used as a interfacial dipole layer between active layer and metal cathode in polymer solar cell for enhancement of open-circuit voltage (Voc), which is one of the most critical factors in determining device characteristics. We also investigated the device performance of polymer solar cell with different metal cathode such as Al, Ag, Au and Cu. In polymer solar cell, novel cationic water-soluble conjugated polymers were inserted between active layer and high-work function cathode (Al, Ag, Au and Cu).

• Transactions on Electrical and Electronic Materials
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• 제17권1호
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• pp.21-24
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• 2016

A junction box used in a 3 kW photovoltaic power generation system plays a role in collecting and supplying the direct current voltage produced by photovoltaic modules to an inverter. It is also used for facilitating maintenance checks and protecting the module and inverter by keeping the voltage constant. As for the junction box, using it in a parallel connection creates a difference between the setup modules. In order to compensate, an inverse voltage diode is used. But the high-power created through the solar generator can be delivered to the inverter through the inverter regularly. Therefore, a component can break down due to excess heat. And consequently short circuits and electric leakage occurs. In this study, using a junction box that enabled the bypass of high electric power, it was possible to reduce heat generation by approximately 35℃ when compared to a standard junction box.