• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.1
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• pp.100-104
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• 2011

In this work, an optimum condition of electrolytes preparation for photovoltaic cells application was investigated experimentally in terms of impedance and conversion efficiency of the cells. 3-methoxyppropionitrie and redox pairs with LiI and $I_2$ were used as stable solvents for fabrication of electrolyte. Efficiency comparison of the prepared cells carried out for various additives and ionic liquids. From the results, there was an optimum concentration (about 0.3 M) of ionic liquids for efficient cell fabrication. For case of electrolyte using single DMAp additive, the maximum conversion efficiency of the cell was 6.4%($V_{oc}$: 0.78V, $J_{sc}$: 14.4 mA/$cm^2$, ff: 0.57). For case of electrolyte using both DMAp and CEMim additives, the maximum conversion efficiency of the cell was 7.2%($V_{oc}$: 0.79V, $J_{sc}$: 16 mA/$cm^2$, ff: 0.57). From the result of electrochemical impedance measurement, both Z1 and Z3 values of binary additives-based cell decreased compared to those of single additive-based. This is due to the decreased in internal and charge transfer resistivities of the cells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.254-261
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• 2010

Polycrystalline silicon (pc-Si) films are fabricated and characterized for application to pc-Si thin film solar cells as a seed layer. The amorphous silicon films are crystallized by the aluminum-induced layer exchange (ALILE) process with a structure of glass/Al/$Al_2O_3$/a-Si using various thicknesses of $Al_2O_3$ layers. In order to investigate the effects of the oxide layer on the crystallization of the amorphous silicon films, such as the crystalline film detects and the crystal grain size, the $Al_2O_3$ layer thickness arc varied from native oxide to 50 nm. As the results, the defects of the poly crystalline films are increased with the increase of $Al_2O_3$ layer thickness, whereas the grain size and crystallinity are decreased. In this experiments, obtained the average pc-Si sub-grain size was about $10\;{\mu}m$ at relatively thin $Al_2O_3$ layer thickness (${\leq}$ 16 nm). The preferential orientation of pc-Si sub-grain was <111>.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.176-181
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• 2009

In this work, a new type of DSCs based on nanoporous FTO structure is being developed for research aimed at low-cost high-efficiency solar cell application. The nanoporous FTO materials have been prepared through the sol-gel combustion method followed by thermal treatment at $450{\sim}850[^{\circ}C]$. The properties of the nanoporous FTO materials were investigated by IR spectra, BET and TEM analyses, and the photovoltaic performance of the prepared DSCs were examined. It can be seen from the result that the nanoporous FTO exhibited good transparent conductive properties, well suited for DSCs application.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.460-460
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• 2014

Organic photovoltaic cells (OPV) have been extensively studied due to their unique properties such as flexibility, light-weight, easy processability, cost-effectiveness, and being environmental friendly. These advantages make them an attractive candidate for application in various novel fields and promising development with new features. Photovoltaic cell-integrated textiles have greatly attractive features as a power source for the smart textile solutions, and OPV is most ideal form factor due to advantage of flexibility. In this study, we develop a textile-based OPV through various experimental methods and we suggest the direction for the design of the photovoltaic textile. We used a textile electrode and tried to various layouts for textile-based OPV. Finally, we determined the contact area by using Hertzian theory for the calculation of power conversion efficiency (PCE). Based on the results of calculation, the short circuit current density, Isc, was $13.11mA/cm^2$ under AM 1.5condition and the PCE was around 2.5%.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.444-446
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• 2006

In recent, DC power is familiar around human's life. Specially, a lot of renewable energy such as fuel-cell and solar cell system are DC power generation system. This paper consider how DC lighting system can be constructed on DC power system and what is necessary for an efficient operation.

• Korean Journal of Agricultural and Forest Meteorology
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• v.13 no.1
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• pp.41-46
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• 2011

Reliable information on the surface solar radiation is indispensable for rebuilding food production system in the famine plagued North Korea. However, transfer of the related modeling technology of South Korea is not possible simply because raw data such as solar radiation or sunshine duration are not available. The objective of this study is restoring solar radiation data at 27 synoptic stations in North Korea by using satellite remote sensing data. We derived relationships between MODIS radiation estimates and the observed solar radiation at 18 locations in South Korea. The relationships were used to adjust the MODIS based radiation data and to restore solar radiation data at those pixels corresponding to the 27 North Korean synoptic stations. Inverse distance weighted averaging of the restored solar radiation data resulted in gridded surfaces of monthly solar radiation for 4 decadal periods (1983-1990, 1991-2000 and 2001-2010), respectively. For a direct application of these products, we produced solar irradiance estimates for each sub-grid cell with a 30 m spacing based on a sun-slope geometry. These products are expected to assist planning of the North Korean agriculture and, if combined with the already prepared South Korean data, can be used for climate change impact assessment across the whole Peninsula.