• 천문학회지
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• 제53권3호
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• pp.69-75
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• 2020

We study the photometric phase curves for the planets of our solar system which can be considered as a prototypical non-compact planetary system. We focus on modeling the small variations caused by three effects: reflection, ellipsoidal, and Doppler beaming. Theoretical predictions for these photometric variations are proposed, considering a hypothetical external observer. Unlike similar studies of multi-planetary systems, the physical and geometrical parameters for each planet of the solar system are well-known. Therefore, we can accurately evaluate the relationships that shape the planetary light curves for a fictitious external observer. Our results suggest that, for all planets, the ellipsoidal effect is very weak while the Doppler beaming effect (DBE) is, in general, dominant. In fact, the DBE seems to be the principal cause of variations of the light curves for the planets of the solar system. However, for Mercury and Venus the Doppler beaming and reflection effects have similar amplitudes. The phase curves obtained for the planets of the solar system show new interesting features of interest for the study of other non-compact planetary systems.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.183-186
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• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• 공업화학
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• 제28권1호
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• pp.35-41
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• 2017

외부에 노출된 재료는 자외선, 열, 온도, 습도 등의 다양한 환경 인자에 의해 성능저하가 일어나게 되며, 열화속도 및 사용수명에 대한 예측은 매우 중요한 문제이다. 본 연구에서는 가장 많이 사용되고 있는 색상 중 흰색, 초록색 재귀반사시트를 가지고 미국 아리조나, 인도 첸나이, 프랑스 세너리, 한국 서산 등 4개 지역에서 옥외폭로시험 및 제논아크촉진시험을 통하여 재귀반사시트 반사성능의 변화율을 측정하였다. 서산지역 및 제논아크 촉진시험을 통하여 얻어진 반사성능 값을 통해 회귀분석을 이용하여 가속계수를 구하였다. 또한, solar uv 프로그램을 이용하여 다양한 기후지역별 가속계수를 구할 수 있었으며, 그 결과 서산지역을 기준으로 프랑스 세너리 1.04배, 미국 아리조나 1.82배, 인도 첸나이 1.92배의 가속계수를 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.428-430
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• 2008

Dye-sensitized solar cell has many internal resistant components such as Pt counter electrode, $TiO_2$/dye/electrolyte, charge diffusion, sheet resistance of TCO. Among these, the resistance about the counter electrode can be reduced by increasing the roughness factor of Pt counter electrode. This causes the increase of fill factor and improvement of efficiency. And the amount of light reflection on the counter electrode also increases as the roughness factor goes up. In our experiment, we suggest a new deposition structure of Pt thin film that is a stepped-type structure. The more step lines are in the counter electrode, the more roughness factor is. As a result, we get the improvement of fill factor and efficiency by controlling the roughness factor of counter electrode.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.72.2-72.2
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• 2010

Nowadays, the crystalline Si Solar cell are expected for economical renewable energy source. The cost of the crystalline Si solar cell are decreasing by improvement of its efficiency and decrease of the cost of the raw Si wafers for Solar cells. This Si wafer based crystalline Si solar cell is the verified technology from several decade of its history. Now, I will introduce one method that can be upgrade the efficiency by using simple and economical method. The name of this method is Rear Side Etching(RSE). The purpose of rear side etching is the elimination of n+ layer of rear side and increase of the flatness. The effects of rear side etching are the improvement of Voc and increase of efficiency by reducement series resistance and forming of uniform BSF. The experimental procedure for rear side etching is very simple. After anti-reflection coating on solar cell wafer, Solar cell wafer is etched by the etching chemical that react with only rear side not front side. This special chemical is no harmful to anti-reflection coating layer. It can only etched rear side of solar cell wafer. We can use etching image by optical microscope, minority carrier life time by WCT 120, SiNx thickness and refractive index by ellipsometer, cell efficiency for the RSE effect measurement. The key point of rear side etching is development of etching process condition that react with only rear side. If we can control this factor, we can achieve increase of solar cell efficiency very economically without new device.

• 대한기계학회논문집B
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• 제35권12호
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• pp.1383-1389
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• 2011

본 연구는 태양열 발전에 사용하는 공기식 다채널 체적식 흡수기의 일관성 있는 열전달 해석에 초점을 두고 있다. 이를 위해 흡수 소재 물성과 채널 형상 변화의 영향을 몬테카를로 광선추적법에 기반한 광학 모델과 전도, 대류, 복사를 고려한 1 차원 열전달 모델에 동시에 반영하였다. 광학 모델 결과는 채널 반경 대비 길이의 형상비가 매우 커서 대부분의 태양 에너지는 15 mm 이내의 짧은 길이에서 흡수됨을 증명하고 있다. 복사 열손실 분류를 통해 채널의 낮은 흡수율에서는 방사 손실은 줄지만 반사손실이 증가하여 흡수기 효율이 감소하는 것을 보였다. 큰 채널 반경이나 작은 질량 유량으로 인해 흡수기 평균 온도가 상승할 때, 방사 손실과 반사 손실 모두 증가하지만 방사 손실의 영향이 더 큰 것으로 나타났다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.345-348
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• 2012

The optical losses associated with the reflectance of incident radiation are among the most important factors limiting the efficiency of a solar cell. Therefore, photovoltaic cells normally require special surface structures or materials, which can reduce reflectance. In this study, nano-scale textured structures with anti-reflection properties were successfully formed on silicon. The surface of sicon wafer was etched by the inductively coupled plasma process using the gaseous mixture of $SF_6+O_2$. We demonstrate that the reflection characteristic has significantly reduced by ~0% compared with the flat surface. As a result, the power efficiency $P_{max}$ of the nano-scale textured silicon solar cell were enhanced up to 20%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.322-322
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• 2010

Recently, anti-reflective films (AR) are one of the most studied parts of a solar cell since these films improve the efficiency of photovoltaic devices. Also, anti-reflection films on the textured silicon solar cells reduce the amount of reflection of the incident light, which improves the device performance due to light trapping of incident light into the cell. Therefore, we preformed two step processes to get textured Si (100) substrate in this experiment. Pyramid size of textured silicon had approximately $2{\sim}9\;{\mu}m$. A well-textured silicon surface can lower the reflectance to 10%. For more reduced reflection, TiO2 anti-reflection films on the textured silicon were deposited at $600^{\circ}C$ using titanium tetra-isopropoxide (TTIP) as a precursor by metal-organic chemical vapor deposition (MOCVD), and the deposited TiO2 layers were then treated by annealing for 2 h in air at 600 and $1000^{\circ}C$, respectively. In this process, the treated samples by annealing showed anatase and rutile phases, respectively. The thickness of TiO2 films was about $75{\pm}5\;nm$. The reflectance at specific wavelength can be reduced to 3% in optimum layer.