• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.148-148
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• 2011

Recently, there have been many research activities to develop the large-area plasma source, which is able to generate the high-density plasma with relatively good uniformity, for the plasma processing in the thin-film solar cell and display panel industries. The large-area CCP sources have been applied to the PECVD process as well as the etching. Especially, the PECVD processes for the depositions of various films such as a-Si:H, ${\mu}c$-Si:H, Si3N4, and SiO2 take a significant portion of processes. In order to achieve higher deposition rate (DR), good uniformity in large-area reactor, and good film quality (low defect density, high film strength, etc.), the application of VHF (>40 MHz) CCP is indispensible. However, the electromagnetic wave effect in the VHF CCP becomes an issue to resolve for the achievement of good uniformity of plasma and film. Here, we propose a new electrode as part of a method to resolve the standing wave effect in the large-area VHF CCP. The electrode is split up a series of strip-type electrodes and the strip-type electrodes and the ground ones are arranged by turns. The standing wave effect in the longitudinal direction of the strip-type electrode is reduced by using the multi-feeding method of VHF power and the uniformity in the transverse direction of the electrodes is achieved by controlling the gas flow and the gap length between the powered electrodes and the substrate. Also, we provide the process results for the growths of the a-Si:H and the ${\mu}c$-Si:H films. The high DR (2.4 nm/s for a-Si:H film and 1.5 nm/s for the ${\mu}c$-Si:H film), the controllable crystallinity (~70%) for the ${\mu}c$-Si:H film, and the relatively good uniformity (1% for a-Si:H film and 7% for the ${\mu}c$-Si:H film) can be obtained at the high frequency of 40 MHz in the large-area discharge (280 mm${\times}$540 mm). Finally, we will discuss the issues in expanding the multi-electrode to the 8G class large-area plasma processing (2.2 m${\times}$2.4 m) and in improving the process efficiency.

• 한국산학기술학회논문지
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• 제21권3호
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• pp.556-563
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• 2020

대부분의 건물일체형 태양광 발전 시스템(BIPVS; Building Integrated Photovoltaic System)은 건물의 옥상이나 벽면에 설치된다. 따라서 BIVPS의 설치 위치 선정 시 고려해야할 가장 중요한 요소는 주변 건물에 의한 그림자 영향이다. 그러나 지면 위에 있는 방음벽에 태양광 시스템을 설치할 경우, 그림자는 주변 건물은 물론 가로수에 의해서도 생성된다. 따라서 방음벽 일체형 태양광 발전 시스템(SIPVS; Soundproof wall Integrated Photovoltaic System)의 설치 적합지를 선정하기 위해서는 BIPVS의 경우와 다른 데이터 모델 및 알고리즘이 필요하다. 본 논문에서는 수치표면모형 기반의 방음벽 일체형 태양광 시스템의 설치 적지 분석을 다룬다. 첫째, 설치 후보지(태양광 패널)의 연간 태양 입사각과 고도각을 계산한다. 둘째, 설치 후보지의 시간대 별 그림자 생성 여부를 수치표면모형을 이용하여 결정한다. 셋째, 그림자가 생성되지 않은 시간대의 태양 입사각을 이용하여 일사량을 계산한다. 일사량의 연간 누적 비교를 통하여 일사량이 충분한 곳을 SIPVS의 설치 적합지로 결정할 수 있다. 제안된 알고리즘은 시작품 형태로 구현(Java Program)되었다. 실험 결과, 총 아홉 곳의 후보지에 대한 설치 적합도의 순서를 결정할 수 있었다. 제안된 알고리즘은 건물의 낮은 위치에 설치할 BIPVS의 적정 설치위치 및 기대 전력 생산량의 계산에도 활용될 수 있을 것이다.

• 한국항행학회논문지
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• 제21권1호
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• pp.99-106
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• 2017

본 논문에서는 배터리 외에 별도의 전력원이 없거나 전력이 부족한 사물인터넷 환경에서 스마트 비디오 디바이스에 에너지 공급을 위한 에너지 하비스팅 및 프로파일링 시스템을 설계한다. 에너지 하비스팅 모듈은 태양전지판에서 하비스팅 된 태양광 에너지를 스마트 비디오 디바이스에 전달하고, 에너지 프로파일링 모듈은 디바이스 내부 배터리 유출 전류와 전압, 프로세스 소비 에너지를 측정하고 이를 이용하여 에너지 하비스팅 모듈로부터 디바이스 내부로 유입된 에너지와 디바이스 내부 소비 에너지를 계산한다. 실제 환경에서 측정한 하비스팅 된 에너지를 기상청이 제공하는 지역 일사량으로부터 계산한 에너지와의 비교를 통해 설계한 에너지 하비스팅 및 프로파일링 시스템의 적합성을 검증한다. 설계한 에너지 하비스팅 및 프로파일링 시스템은 지속 가능한 스마트 비디오 디바이스나 사물인터넷용 센서 설계에 활용될 수 있다.

• 설비공학논문집
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• 제28권10호
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• pp.387-393
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• 2016

A ground source heat pump system maintains a constant efficiency due to its stable heat source and radiant heat temperature which provide a more effective thermal performance than that of the air source heat pump system. As an eco-friendly renewable energy source, it can reduce electric power and carbon dioxide. In this study, we analyzed one year of data from a web based remote monitoring system to estimate the thermal performance of GSHP with the capacity of 3RT, which is installed in a low energy house located in Daejeon, Korea. This GSHP system is a hybrid system connected to a solar hot water system. Cold and hot water stored in a buffer tank is supplied to six ceiling cassette type fan coil units and a floor panel heating system installed in each room. The results are as follows. First, the GSHP system was operated for ten minutes intermittently in summer in order to decrease the heat load caused by super-insulation. Second, the energy consumption in winter where the system was operated throughout the entire day was 7.5 times higher than that in summer. Moreover, the annual COP of the heating and cooling system was 4.1 in summer and 4.2 in winter, showing little difference. Third, the outlet temperature of the ground heat exchanger in winter decreased from $13^{\circ}C$ in November to $9^{\circ}C$ in February, while that in summer increased from $14^{\circ}C$ to $17^{\circ}C$ showing that the temperature change in winter is greater than that in summer.

• International Journal of Aeronautical and Space Sciences
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• 제3권1호
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• pp.61-73
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• 2002

This paper addresses the conceptual design results of the HAUSAT-1 (Hankuk Aviation University SATellite-1), developed by Space System Research Lab. of Hankuk Aviation Univ., which is a new generation picosatellite. This project has been funded by Korean Government for the purpose of developing the space core technology. This is the first attempt at the level of university in Korea to develop the satellite weighing less than 1kg and accelerates opportunities with low construction, low launch cost space experiment platforms. The purpose of the HAUSAT-1 project is to offer graduate and undergraduate students great opportunities to be able to understand the design process of satellite development as a team member. Its mission objectives are to track its position by the GPS receiver system, to deploy the thin film solar cell panel to generate extra power, and to measure plasma density and temperature with the plasma sensor. The HAUSAT-1 will orbit at the altitude of 650 km with 65 degree inclination angle with 12 months of design mission life. It is planned to be launched on November 2003 by Russian launch vehicle "Dnepr".

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.143-146
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and discharge power on the electrical, optical and morphological properties were investigated experimentally. The consideration on the effect of doping amounts of Al on the electrical and optical properties of ZnO thin film were also carried out. ZnO:Al films with the optimum growth conditions showed resistivity of $9.42{\times}10^{-4}\;{\Omeg}-cm$ and transmittance of 90.88% for 840nm in film thickness in the wavelength range of the visible spectrum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.425-425
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• 2008

The transparent conducting oxides(TCOs) are widely used as electrodes for most flat panel display devices(FPDs), electrodes in solar cells and organic light emitting diodes(OLED). Among them, indium oxide materials are mostly used due to its high electrical conductivity and a high transmittance in the visible spectrum. The present study reports on a study of the electrical and optical properties of IGZO thin films prepared on glass and PET substrates by the combinational magnetron sputtering. We use the targets of IZO and Ga2O3 for the deposition process. In some case the deposition process is coupled with the End-Hall ion-beam treatment onto the substrates before the sputtering. In addition we control the deposition rate to optimize the film quality and to minimize the surface roughness. Then we investigate the effects of the Ar gas pressure and RF power during the sputtering process upon the electrical, optical and morphological properties of thin films. The properties of prepared IGZO thin films have been analyzed by using the XRD, AFM, a-step, 4-point probe, and UV spectrophotometer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.146-147
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• 2011

Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

• 생물환경조절학회지
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• 제26권4호
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• pp.353-360
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• 2017

본 연구에서는 장미 재배온실을 대상으로 온실 내부의 태양잉여열과 외부의 공기열을 선택적 열원으로 이용하여 온실난방용 온수를 생산할 수 있는 공기 대 물 히트펌프의 설계와 성능시험을 수행하였다. 태양잉여열 이용 축열운전과 외기열 이용 축열운전은 작물의 생육적온을 고려한 온실내부의 설정온도에 따라 자동전환 되도록 설계하였다. 제어반에 12개의 기준온도를 설정함으로써 축열운전 전환, 난방, 환기를 자동제어하며, 태양잉여열-외기열 선택적 축열운전에서 축열조의 온도는 축열능력과 난방부하에 대응하여 $35{\sim}52^{\circ}C$로 3단계 변온제어 하였다. 태양잉여열-외기열 선택적 축열에서 태양잉여열 이용 축열은 전체 시간의 23.1%, 외기열 이용 축열은 30.7%, 히트펌프 휴지시간은 46.2%를 차지하였으며, 난방성능계수는 태양잉여열 이용 축열 시 3.83, 외기열 이용 축열시 2.77, 전체 3.24로 평가되었다. 비교시험을 위해 축열조 온도를 $50{\sim}52^{\circ}C$로 항온제어 하는 조건에서 외기열 단독 이용 축열 시험을 수행하였으며 이때의 난방성능계수는 2.33으로 분석되었다. 결과적으로 공기 대 물 히트 펌프의 열원으로 온실내부 태양잉여열과 외부 공기열을 병용하고, 축열조 온도를 변온제어 한 결과 일반적인 외기열 이용 축열운전과 축열조 항온제어에 비해 난방성능 계수가 39% 향상됨을 확인하였다.