• 태양에너지
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• 제18권1호
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• pp.81-89
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• 1998

In this paper an experimental was done to design combustion chambers which is required radiation strength of high temperature generator of absorption rigerator. Partiqularly, in combustion chamber radiative mediums were set and basic experiments were done according to its size by radiation strength and effects of heat transfer promotion. The results are as follows : 1) When radiative mediums were set in small combustion furnace burning nonframely radiative heat transfer was effected. 2) In case that area ratio($A/A_o$) of radiative medium is 0.82 or over, temperature fluctuation effects of furnace inside were not nearly. 3) In experimental boundary heat transfer effects were 1.8 times by setting up radiative medium. Specially, $q/{\Delta}T$ values of furnace inside were uniformed nearly by setting up radiative mediums.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2015년도 춘계 학술논문 발표대회
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• pp.152-153
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• 2015

Recently, solar energy generation is one of the fastest growing industries for eco-friendly energy. Every year, solar energy generation industry grows to 42% on average. However, polysilicon sludge is generated from processing of polysilicon but, there is nothing to handle that. Therefore, we need research to recycle polysilicon sludge. Also, improved fire resistance efficiency of wall is required according to reinforced fire safety standards due to many cases of big fires in our country. This study focuses on density and strength properties according to the addition ratio of paper Ash for the lightweight composite panel core with polysilicon sludge. As a result of the test, adding paper ash 9% has the best density and strength properties.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.61-64
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• 2011

In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

• 조명전기설비학회논문지
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• 제27권6호
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• pp.95-99
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• 2013

Furnace is currently the most important doping process using POCl3 in solar cell. However furnace need an expensive equipment cost and it has to purge a poisonous gas. Moreover, furnace typically difficult appling for selective emitters. In this study, we developed a new atmospheric pressure plasma source, in this procedure, we research the atmospheric pressure plasma doping that dopant is phosphoric acid($H_3PO_4$). Metal tube injected Ar gas was inputted 5 kV of a low frequency(scores of kHz) induced inverter, so plasma discharged at metal tube. We used the P type silicon wafer of solar cell. We regulated phosphoric acid($H_3PO_4$) concentration on 10% and plasma treatment time is 90 s, 150 s, we experiment that plasma current is 70 mA. We check the doping depth that 287 nm at 90 s and 621 nm at 150 s. We analysis and measurement the doping profile by using SIMS(Secondary Ion Mass Spectroscopy). We calculate and grasp the sheet resistance using conventional sheet resistance formula, so there are 240 Ohm/sq at 90 s and 212 Ohm/sq at 150 s. We analysis oxygen and nitrogen profile of concentration compared with furnace to check the doped defect of atmosphere.

• 한국주조공학회지
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• 제13권3호
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• pp.213-219
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• 1993

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.43.2-43.2
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• 2011

Minority Carrier recombination should be suppressed for high efficiency solar cells. However, impurities in the silicon bulk region deteriorate the minority carrier lifetimes, causes conversion efficiency drop. In this study, we introduced phosphorus external gettering for silicon heterojunction solar cell substrates. Gettering was undergone at 750, 800, 850 and $900^{\circ}C$ in furnace for 30 minutes. Bulk lifetimes and calculated diffusion length were improved. We applied phosphorus gettering to silicon heterojunction solar cells. Gettered group and ungettered group were used as substrate of silicon heterojunction solar cells. After fabrication, characteristics of solar cells were analyzed. The results were observed to see the enhancement of substrate quality which directly connects with solar cell properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.97-97
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• 2014

The properties of thin film solar cells based on electrodeposited $CuIn(Se,S)_2$ were investigated. The proposed solar cell fabrication method involves a single-step $CuInSe_2$ thin film electrodeposition followed by sulfurization in a tube furnace to form a $CuIn(Se,S)_2$ quaternary phase. A sulfurization temperature of $450-550^{\circ}C$ significantly affected the performance of the $CuIn(Se,S)_2$ thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall band gap of the $CuIn(Se,S)_2$ thin film. The highest conversion efficiency of 3.12% under airmass(AM) 1.5 illumination was obtained from the $500^{\circ}C$-sulfurized solar cell. The highest External Quantum Efficiency(EQE) was also observed at the sulfurization temperature of $500^{\circ}C$.

• 태양에너지
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• 제9권3호
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• pp.55-63
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• 1989

In this paper, the fluidization characteristics of the magnesia fluidized bed and the heat transfer characteristics with the specimen (SM55C) plunged in the bed have been investigated. To characterize the fluidization, the minimum fluidizing velocities and the relation ships between bed voidage and fluidization rate and obtained. To characterize heat transfer, the experiments for finding heating time transfer effect have been carried out by varying the magnesia particles sizes. optimum heating condition in the magnesia fluidized bed is obtained.

• 한국태양에너지학회 논문집
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• 제31권4호
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• pp.41-47
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• 2011

The volumetric solar receiver is a key element of solar power plants using air. The solar flux distribution inside the receiver should be a priori known for its heat transfer analysis. Previous works have not considered characteristics of the solar flux although they change with radiative properties of receiver materials and receiver geometries. A numerical method, which is based on the Monte Carlo ray-tracing method, was developed in the current work. The solar flux distributions inside multi-channeled volumetric solar receivers were calculated when light is concentrated at the KIER solar furnace. It turned out that 99 percentage of the concentrated solar energy is absorbed within 15mm channel length for the channel radius smaller than 1.5mm. If the concentrated light is assumed to be diffuse, the absorbed solar energy at the channel entrance region is over predicted while the light penetrates more deeply into the channel. Once the presented results are imported into the heat transfer analysis, one could examine effects of material property and geometry of the receiver on air temperature profiles.