• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.8
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• pp.563-569
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• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• New & Renewable Energy
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• v.3 no.4
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.6
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• pp.1045-1050
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• 2009

The current-voltage characteristics of solar cell has been analyzed using MicroTec in this paper. The current-voltage characteristics represents a efficiency of solar cell. The part of metal contact is doped highly, but active region is doped lowly. We have investigated the current-voltage characteristics according to variation of doping concentration from $10^{14}cm^{-3}$ to $10^{17}cm^{-3}$. We has also determined the doping concentration to obtain the maximum efficiency of solar cell, and analyzed this current-voltage characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.121-125
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• 2014

In this research, nanocomposite layers consisting of poly (3,4,-ethylene dioxythiophene):polystyrene sulfonic acid (PEDOT:PSS) and CuO nanoparticles were investigated as hole transport layers in organic solar cells based on poly (3-hexylthiophene) (P3HT) as the electron donor and (6.6) phenyl-C61-butyric acid methyl ester (PCBM) as the electron acceptor. The addition of CuO nanoparticles to PEDOT:PSS layer improved the solar cell performance with 0.5% CuO nanoparticle concentration. At optimized concentration, CuO mixed PEDOT:PSS films had good electrical ($4.131{\Omega}{\cdot}cm$) and optical (transmittance > 90%) properties for using hole transporting layer. We investigated that improved solar cell performance with CuO nanoparticles mixed PEDOT:PSS films.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.5
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• pp.705-710
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• 2012

An anti-reflection layer (AR) is used in the solar cell to improve the amount of the irradiated light, resulting in the improvement of the performance of the solar cell. In this study, the zinc oxide (ZnO) AR is applied to the dye-sensitized solar cell (DSC) by using zinc nitrate solution. The conditions such as solution concentration and sintering temperature for fabricating the ZnO AR are changed to optimize the performance of the AR. As a result, the best performance is shown when the zinc nitrate solution with 100mM concentration is used and the sintering temperature is $600^{\circ}C$. And then, the ZnO AR formed with these optimal conditions is applied to the DSC. Consequently, a DSC with a ZnO AR had an increased current density up to 13.86$mA/cm^2$ and an enhanced efficiency of 6.32%.

• Journal of Korean Society for Atmospheric Environment
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• v.9 no.1
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• pp.107-115
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• 1993

This study was carried out to find the characteristics of surface ozone concentration data obtained during 1988-1991 by the Korea Ministry of Environment. Seasonal data (spring, summer, autumn and winter) wre obtained in May, August, November and February respectively at Kwanghwamun in Seoul. The pollutants analyzed in this study are $SO_2, TSP, CO, NO, NO_2 and NO_2/NO$. Atmospheric factors such as solar radiation, wind speed, relative humidity, cloud amount and atmospheric temperature are also analyzed. The influence of pollutants and atmospheric factors that affect ozone concentration were analyzed by statistical method. The results are summarized as follows : 1. The ozone concentration varied seasonally. The maximum values were 23 ppb in spring, 33 ppb in summer, 16 ppb in autumn and 13 ppb in winter. So the seasonal ozone value was highest in Summer. 2. Te diurnal concentration of ozone was highest during 2-4 P. M. and was very low in the morning and evening. 3. The maximal correlation coefficients of each season between ozone concentration and the influencing pollutants or atmospheric factors asr as follows ; a. spring, r = 0.44(solar radiation) b. summer, r = -0.59(relative humidity) c. autumn, r = -0.55(relative humidity) d. winter, r = -0.58($NO_2$) 4. The major factor affecting the ozone concentration in spring was solar radiation, Relative humidity was the first affecting factor in summer, autumn and $NO_2$ concentration was dominant in winter.

• Clean Technology
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• v.12 no.4
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• pp.244-249
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• 2006

The photocatalytic degradation of trichloroethlylene (TCE), has been investigated over $TiO_2$ photocatalysts irradiated with solar light. The effect of operational parameters, i.e., initial TCE concentration, $TiO_2$ concentration, pH and additives ($H_2O_2$, persulphate($S_2O{_8}^-$)) on the degradation rate of aqueous solution of TCE has been examined. The results presented in this work demonstrated that degradation of the TCE with $TiO_2/solar$ light was enhanced by augumentation in $TiO_2$ loading, pH, and adding additives but was inhibited by increase in initial TCE concentration. Also individual use of $H_2O_2$ was far more effective than using persulphate in TCE removal efficiency. Furthermore, the relative toxicity with a $solar/TiO_2/H_2O_2$ system was about 15% lower than with a $solar/TiO_2/persulphate$ system and about 35% lower than with a $solar/TiO_2$ system within a reaction time of 150 min, respectively.

• Journal of the Korean Solar Energy Society
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• v.26 no.1
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• pp.7-12
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• 2006

The dish type solar thermal concentrating system can collect the solar energy above $800^{\circ}C$. It has a concentration ratio of 800 and total reflector area of $49m^2$. To operate solar receivers at high temperature, the optimum aperture size is obtained from a comparison between maximizing absorbed energy and minimizing thermal losses. The system efficiency is defined as the absorbed energy by working fluid in receiver divided by the energy coming from the concentrator. We find that system efficiency is stable in case of flow rate of above 6lpm. The system efficiency are 64.9% and 65.7% in flow rate of 6lpm and 8lpm, respectively. The thermal performance showed that the maximum efficiency and the factor of thermal loss in flow rate of 8lpm are 68% and 0.0508.