• Bulletin of the Korean Chemical Society
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• 제27권12호
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• pp.1981-1984
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• 2006

Novel amphiphilic, thermo-responsive polyaspartamides which showed both LCST (lower critical solution temperature), and sol-gel transition were prepared and characterized. The polyaspartamide derivatives were synthesized from polysuccinimide, the polycondensate of aspartic acid monomer, via successive nucleophilic ring-opening reaction by using dodecylamine and N-isopropylethylenediamine (NIPEDA). At the intermediate composition ranges, the dilute aqueous solution exhibited a thermally responsive phase separation due to the presence of LCST. The phase transition temperature was controllable by changing the content of pendent groups. In addition, a physical gelation, i.e. the sol-gel transition was observed from the concentrated solutions, which was elucidated by dynamic viscoelastic measurements. These novel injectable and thermo-responsive hydrogels have potential for various biomedical applications such as tissue engineering and current drug delivery system.

• 한국지능시스템학회:학술대회논문집
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• 한국퍼지및지능시스템학회 2005년도 춘계학술대회 학술발표 논문집 제15권 제1호
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• pp.139-142
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• 2005

This paper describes an automatic finite element (FE) mesh generation for three-dimensional structures consisting of free-form surfaces. This mesh generation process consists of three subprocesses: (a) definition of geometric model, i.e. analysis model, (b) generation of nodes, and (c) generation of elements. One of commercial sol id modelers is employed for three-dimensional sol id structures. Node is generated if its distance from existing node points is similar to the node spacing function at the point. The node spacing function is well control led by the fuzzy knowledge processing. The Delaunay method is introduced as a basic tool for element generation. Automatic generation of FE meshes for three-dimensional sol id structures holds great benefits for analyses. Practical performances of the present system are demonstrated through several mesh generations for three-dimensional complex geometry.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.61-67
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• 1997

We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta$_{2}$O$_{5}$ film was annealed at 400.deg. C. It is found that dielectric strength in Ta$_{2}$O$_{5}$ film annealed at 400.deg. C (1.5MV/cm) increases and then decreases over annealed at 500.deg. C. This phenomenon was attributed to pinhole effect and crystallization. The de conduction properties can be interpreted by Poole-Frenkel effect.ect.

• 소성∙가공
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• 제11권7호
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• pp.569-574
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• 2002

Recently, thick PZT films are required for the cases of micro piezoelectric devices with high driving force, high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated by Sol-Gel multi-coating method. Microstructures, and electrical properties of films were investigated by XRD, FESEM, impedance analyzer, and P-E hysteresis. PZT films with 2.7$mu extrm{m}$ to 4.4${\mu}{\textrm}{m}$ thickness were fabricated. Dielectric constant, loss, remnant polarization and coercive field of them were 880~1650 at 1kHz, 2~3% at 1kHz, 26~32 $\mu$C/$ extrm{cm}^2$, and 33~60kV/cm, respectively. Also a transverse piezoelectric coefficient $(e_{31,f})$ measurement system was fabricated and tested for thick film samples.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• 대한금속재료학회지
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• 제49권7호
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• pp.583-588
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• 2011

$Cd_xZn_{1-x}O$ thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the $Cd_xZn_{1-x}O$ thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [$Cd{(CH_3COO)}_2{\cdot}2H_2O$] and zinc acetate dehydrate [$Zn{(CH_3COO)}_2{\cdot}2H_2O$]. The effects of the mole fraction on the morphological, structural, and optical properties of the $Cd_xZn_{1-x}O$ thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The $Cd_xZn_{1-x}O$ thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the $Cd_xZn_{1-x}O$ thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy ($E_U$) values changed inversely to the optical bandgap of the $Cd_xZn_{1-x}O$ thin films.

• Corrosion Science and Technology
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• 제16권1호
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• pp.49-49
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• 2017

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.222-225
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• 2011

Lead zirconate titanate (PZT) films were fabricated on Pt/Ti/$SiO_2$/Si substrate by the sol-gel method using a sol containing poly(N-vinylpyrrolidone) (PVP). PVP in alkoxide solutions can suppress the condensation reaction in gel films during heat treatment, and increase the viscosity of alkoxide solutions. Single-phase PZT films as thick as 1 ${\mu}m$ were deposited by repetitive coating with successive third-step heat treatments at 150$^{\circ}C$, 350$^{\circ}C$ and 650$^{\circ}C$. After heat treatment, the films were crack free, and optically transparent. As a result, we demonstrated a PZT film with a PVP molar ratio of 0.5, which has a permittivity of 734, a dielectric loss of 0.042, a $P_r$ of 40.5 ${\mu}C/cm^2$ and an $E_c$ of 156 kV/cm.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.100-103
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• 1993

Ferroelectric lean-titanate thin films were fabricated by sol-gel processing. Sol-gel derived $PbTiO_3$ thin films crystallized into the expected tetragonal perovskite structure when heated to $600^{\circ}C$ and above. The effects of annealing temperature on grain size made with SEM observation are reported. The films heated at $650^{\circ}C$ for 30min showed a square-type hysteresis loop with $P_r$ and $E_c$ of $11.5{\mu}C/cm^2$, 115kV/cm, respectively.