• E2M - 전기 전자와 첨단 소재
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• 제7권5호
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• pp.369-375
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• 1994

In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.

• Nuclear Engineering and Technology
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• 제54권1호
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• pp.207-219
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• 2022

The suppression of high-intensity blob structures in the scrape-off layer (SOL) by ion-cyclotron range of frequencies (ICRF) power, leading to a decrease in the turbulent fluctuation level, is observed first in the Experimental Advanced Superconducting Tokamak (EAST) experiment. This suppression effect from ICRF power injection is global in the whole SOL at EAST, i.e. blob structures both in the regions that are magnetically connected to the active ICRF launcher and in the regions that are not connected to the active ICRF launcher could be suppressed by ICRF power. However, more ICRF power is required to reach the full blob structure suppression effect in the regions that are magnetically unconnected to the active launcher than in the regions that are magnetically connected to the active launcher. Studies show that a possible reason for the blob suppression could be the enhanced E_r × B shear flow in the SOL, which is supported by the shaper radial gradient in the floating potential profiles sensed by the divertor probe arrays with increasing ICRF power. The local RF wave power unabsorbed by the core plasma is responsible for the modification of potential profiles in the SOL regions.

• 한국막학회:학술대회논문집
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• 한국막학회 1991년도 추계 총회 및 학술발표회
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• pp.29-33
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• 1991

Alumina UF membranes were prepared by sol-gel process and their gas permeabilities were characterized. Alumina MF membrane with average pore diameter about 0.12$\mu$m and tubular shape was used as a support. Gas permeation measurements of helium and nitrogen gas exhibited the permeabilities of 1.58 $\times$ 10E-6 and $0.63 \times 10E-6 cc\cdot cm(STP)/cm^2\cdot sec \cdot cmHg$, respectively. The permeability ratio was 2.5. This means the gas permeation is fully governed by knudsen diffusion mechanism.

• 공업화학
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• 제19권2호
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• pp.222-227
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• 2008

본 연구에서는 광학센서의 응용을 위해 소수성 졸-겔로 개질된 고분자 막의 미생물 비점착 특성과 광학특성을 조사하였다. DiMe-DMOS (Dimethoxy-dimethylsilane)와 TMOS (Tetramethyl-orthosilicate)를 이용하여 제조한 소수성 졸-겔로 코팅된 컨퍼컬디쉬 표면과 유리표면에 E. coli JM109, B. cereus 318 그리고 P. pastoris X-33을 배양하였다. 배양 후, 부유세포를 증류수를 이용하여 제거하고 그람 염색법에 의해서 점착된 미생물을 염색하였다. 점착된 미생물의 수는 SEM을 이용하여 정량적으로 분석하였다. 유리표면에는 $2{\sim}3{\times}10^4$개/$mm^2$의 미생물이 점착되었으나 소수성 졸-겔 표면에는 200~300개/$mm^2$의 미생물이 점착됨으로써 소수성 졸-겔의 비점착 효과를 알 수 있었다. 또한, 소수성 졸-겔과 절광물질인 흑연을 혼합하여 제조한 절광층(Light insulating layer)을 pH나 용존산소 검출막 위에 재코팅한 후, pH나 용존산소의 검출막의 성능이 향상되었음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.390-390
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• 2010

We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects. which can provide deleterious current paths. are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and $1{\times}10^{-12}A$. respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.93-96
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• 2002

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.131-133
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• 2012

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons (D0X), two-electron satellite (TES), free-to-neutral-acceptors (e,A0), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for D0X in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for D0X transitions.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.233-233
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• 2006

[ $Y_{2}O_{2}S:Eu$ ], a red phosphor, coated with silica nanoparticles or nanocomposites composed of silica nanoparticles and polymeric materials such as PMMA and PVP was prepared via sol-gel process. Samples were prepared from four different methods coded P1, P2, P3, and P4. P1 includes a conventional sol-gel process and a dip-coating method while P2 has the same procedure with P1 except that nanocomposites containing both silica nanoparticles and polymer prepared by sol-gel process were used as coating materials. In P3 method, phosphors were dispersed in a solution containing silica precursor, i.e., TEOS and then polymerization was performed to coat onto the phosphors surface while P4 followed the same procedure with P3 except that a solution containing both TEOS and organic monomer were used in preparing coating materials. Among various coating methods examined in this study, uniform coating of phosphor could be achieved by using method P4, i.e., phosphor surface coating in a solution containing hydrophobic monomer and TEOS. Furthermore, $Y_{2}O_{2}S:Eu$ red phosphor coated with nanocomposite composed of PMMA matrix and silica nanoparticles exhibited enhanced PL intensity and long-term stability.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.1-10
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• 1996

Transparent conducting $SnO_2$-based thin films have been coated on float substrates such as fused quartz, and ceramic fiber cloths such as the Nexel and E-glass cloth from tin alkoxides by the sol-gel technique. Also, thin films of alternating layers of $SnO_2$ and $SiO_2$ have been fabricated by dip coating. The sheet resistance and average visible transmittance of the films were investigated in the aspect of the applications as transparent electrodes such as liquid crystal displays, photo-detectors and solar cells. The Nextel and E-glass cloths coated with antimony-doped tin oxide (ATO) had sheet resistance of as low as $20 \;ohm/{\Box}$ and $120ohm/\;{\Box}$, respectively. The promotion effects of additives as $La_2O_3$ and Pt on the ethanol gas sensing properties of the films were investigated in the aspects of the applications as an alcohol sensor and a breath alcohol checker. Possible evidence of quantum well effects in the oxide multilayers of $SnO_2$ and $SiO_2$ was investigated.

• 한국세라믹학회지
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• 제29권2호
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• pp.89-94
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• 1992

The kinetics of volatilization of phosphorous oxide from phosphosilicate glassceramic powders prepared by a sol-gel process were investigated at a given temperature. The rate of P2O5 vaporization increased with the P2O5 concentration in the phosphosilicate powder. Vaporization from the powder containing 46% P2O5 was analyzed using a kinetic model for diffusion limited evaporation. The diffusion through phosphosilicate glass in the surface of each particle in the temperature range 800~85$0^{\circ}C$ are presented.