• 제목/요약/키워드: Sol-gel processing

검색결과 190건 처리시간 0.039초

솔젤법에 의한 coated conductor용 산화물 완충층의 성장 (A Sol-Gel Growth of Oxide Buffer Layer for Coated Conductor)

  • 김영국;유재무;고재웅;허순영
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 학술대회 논문집
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    • pp.98-100
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    • 2003
  • PbTiO$_3$ films applicable to buffer layers for YBCO coated conductor have been successfully fabricated by sol-gel process. Crystallinity of grown films are heavily dependent on processing parameters such as annealing atmosphere and number of dipping. (100) oreinted PbTiO$_3$ films grown on (200) oriented Ni substrates exhibit uniform surface with small grain size(200~300nm).

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Thin Oxide Functional Films by Metal Alkoxide Method

  • Natalya, Korobova
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.9-16
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    • 2000
  • A survey over the role of sol-gel processing and metal alkoxides in the thin film preparation is given. The basic chemistry of the sol-gel process is complex due to the different reactivities of the network forming and the wide variety of reaction parameters. Despite the important progress in the investigations of the mechanisms of thin film formation, a direct relation of reaction parameters to functional oxide properties is still very difficult.

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졸겔법으로 제조된 MO-$SiO_2$(M=Zn,Sn,In,Ag,Ni)의 구조특성 (Structural Properties of MO-SiO$_2$(M=Zn, Sn, In, Ag, Ni) by Sol-Gel Method)

  • 신용욱;김상우
    • 한국재료학회지
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    • 제11권7호
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    • pp.603-608
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    • 2001
  • 졸겔법에 의해 제조된$ MO-SiO_2$(M=Zn, Sn, In, Ag, Ni)이성분계 실리카 겔에서 금속이온의 종류에 따른 실리카 구조의 변화를 XRD, FT-lR, $^{29}$Si-NMR로 분석하였다. XRD peak을 관찰한 결과 $Ag-SiO_2$겔에서 $AgNO_3$의 부분적인 재결정화가 나타났지만, 첨가된 금속이온과 실리카 매트릭스의 결합에 의한 결정상은 관찰되지 않았다. FT-IR 분석결과 첨가되는 금속이온 중 Zn, Sn, In은 부분적으로 Si-O-M의 결합형태를 이루어 Si-O-Si 대칭 진동에 의한 흡수 peak의 위치를 변화시켰다. $^{29}$Si-NMR 관찰에 의해 Zn, Sn, In등의 금속이온은 실리카의 저온 졸겔 반응에 영향을 미치지 않고 불완전한 네트워크를 갖는 선형적 실리카 구조 내에서 비가교 산소와 결합하며 존재하였다. Ag, Ni는 실리카 네트워크가 형성되는 과정에서 실리카 형성을 위한 졸겔반응의 촉매로서 작용하여, 이러한 금속이온이 첨가된 실리카 네트워크는 보다 치밀한 구조적 특성을 나타내었다.

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A New Trend in the Sol-Gel Method and Thin Films from Metal Alkoxides

  • Soh, Deawha;Korobova, N.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.814-819
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    • 2000
  • The progress in the field of electronic materials has been especially significant for applications involving a range of electrical properties. Its importance is increasing with the increasing demand for integrated circuits. The sol-gel technique has been used for many years, and the metal alkoxides have featured prominently as source materials. The method consist of making a homogeneous solution of the component metal alkoxides in a suitable solvent, usually the parent alcohol; and then causing the hydrolysis under controlled conditions to produce a gel containing the hydrated metal oxide. The gel is then dried, and fired to produce a ceramic or glassy material at a temperature much lower than that required by the conventional melting process. This project consists of important theoretical considerations, processing techniques and applications related to electrophoresis derived thin films. In the electrophoretic process a metal alkoxide solution is gelled through hydrolysis-polymerization and converted the gel thin layer to an oxide by heating at relatively low temperatures.

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Sol-Gel법으로 제조된 $PbTiO_3$ 강유전 박막의 구조적, 유전적 특성 (Structural and Dielectric Properties of $PbTiO_3$ Ferroelectric Thin Film Prepared by Sol-Gel Processing)

  • 김준한;백동수;박창엽
    • 한국세라믹학회지
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    • 제30권9호
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    • pp.695-700
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    • 1993
  • In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

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Tape casting 법과 Sandblasting 법을 이용한 광소자용 기판 제조 (1) (Fabration of PLC susbstrate by slurry filling and sandblasting Method)

  • 조윤희;김용석;이용호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.341-345
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    • 2001
  • In this study, nano-sized powders of $Si0_2-0^{\sim}15mol%B_2O_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and $H_3BO_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module, During the sol-gel processing, $H_2O/Si$ mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the $B_2O_3$ content in the powder. When the silica powders of 75-125nm in diameter containing 15mol% $B_2O_3$ were used, 98 TD% was obtained at $1250^{\circ}C$, which is approximately $300^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

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Tape casting법과 Sandblasting법을 이용한 광소자용 기판 제조 (1) (Fabration of PLC susbstrate by slurry filling and sandblasting Method)

  • 조윤희;김응석;이용호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.341-345
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    • 2001
  • In this study, nano-sized powders of SiO$_2$-0∼15mo1%B$_2$O$_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and H$_3$BO$_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module. During the sol-gel processing, H$_2$O/Si mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the B$_2$O$_3$ content in the powder. When the silica powders of 75∼125nm in diameter containing 15mo1% B$_2$O$_3$ were used, 98 TD% was obtained at 1250$^{\circ}C$, which is approximately 300$^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

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Electrical and thermal properties of polyamideimide-colloid silica nanohybrid for magnetic enameled wire

  • Han, S.W.;Kang, D.P.
    • Journal of Ceramic Processing Research
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    • 제13권spc2호
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    • pp.428-432
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    • 2012
  • Polyamidimide (PAI)-colloidal silica (CS) nanohybrid films were synthesized by an advanced sol-gel process. The synthesized PAI-CS hybrid films have a uniform and stable chemical bonding and there is no interfacial defects observed by TEM. The thermal degradation ratio of PAI-CS (10 wt%) hybrid films is delayed by 100 ℃ compared with pure PAI sample determined by on set temperature range in TGA. The dielectric constant of PAI-CS (10 wt%) hybrid films decreases with increasing CS content up to about 5 wt% but increases at higher CS content, which is not explained simply by effective medium therories (EMT). The duration time of PAI-CS (10 wt%) hybrid coil is 38 sec, which is very longer than that of pure PAI coil sample. The PAI-CS (10 wt%) hybrid film has a higher breakdown voltage resistance than the pure PAI film at surge environment and exhibits superior heat resistance. The PAI-CS (10 wt%) sample shows the advanced and stable thermal emission properties in transformer module compared with the pure PAI sample. This result illustrates that the advanced thermal conductivity and expansion properties of PAI-CS sample in the case of appropriate sol-gel processes brings the stable thermal emission in transformer system. Therefore, new PAI-CS hybrid samples with such stable thermal emission properties are expected to be used as a high functional coating application in ET, IT and electric power products.