• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.665-671
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• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• Journal of the Korean Ceramic Society
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• v.33 no.12
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.288-289
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• 2006

We studied the effect of sol-gel processing and sintering temperature on the microwave properties of $MgCo_2(VO_4)_2$ system(MCV) which is applicable to LTCC(low-temperature cofired ceramics). The MCV was synthesized by sol-gel process using solution that contains precursor molecules for Mg, Co, and V. SEM analysis shows that the average particle size is ${\sim}1{\mu}m$ and size distribution is very uniform compared to the one prepared by conventional solid-state reaction process. Highly dense samples were obtained at the sintering temperature range of $750^{\circ}C{\sim}930^{\circ}C$. The maximum $Q{\times}f_0$ value of 55,700GHz, dielectric constant(${\varepsilon}_r$) of 10.41 and temperature coefficient(${\tau}_f$) of $-85ppm/^{\circ}C$ was obtained at the sintering temperature of $930^{\circ}C$. The superior microwave properties of sol-gel processed MCV relative to conventional solid-state reaction processed one is remarkable especially at lower sintering temperatures such as $750^{\circ}C$ and $800^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.821-825
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• 2002

ZnO thick films by Sol-Gel processing were investigated electrics, optics and the sensing characteristics of CO gas. Using the znic acetate dihydrate and acetylaceton (AcAc) as a chelating agent, stable ZnO sol was synthesized. ZnO phase was crystallized through the heat-treatment at $70^{\circ}C$ for 4hrs and influenced the sensing characteristics of the electrics and CO gas by uniform particle distributions not related particle size. The samples on the alumina substrate by thick films were investigated the properties of electrics and the effect of sensing. The sensitivity was so excellent in the sample of the heat-treatment at $600^{\circ}C$ for 12hrs and good in the heat-treatment for 1hrs generally. Crystallization and volatilization of organic materials according to the change of heating treatment temperature of thick films were analyzed by TG-DTA, XRD and mirostructure of thick films were observed by SEM.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• Journal of the Korean Ceramic Society
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• v.30 no.7
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• pp.571-577
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• 1993

The effect of $\alpha$-Al2O3 seeding on preparation of zirconia/alumina gel fragment prepared by sol-gel processing was characterized through XRD, SEM, TG/DTA and IR analysis. Aluminum isopropoxide and zirconium butoxide were used as starting materials. $\alpha$-Al2O3 seeding restrained grain growth of alumina and zirconia, and decreased tetragonal to monoclinic phase transformation of zirconia on cooling. Therefore, fine zirconia-toughened alumina composite having the relative sintered density of about 98% of theoretical at 140$0^{\circ}C$ for 2h could be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.993-1001
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• 1997

The (0.8PPV+0.2DMPPV) copolymer and silica/borosilicate composites were synthesized by sol-gel process. The organic-inorganic hybrid solution was prepared by using of (0.8PPV+0.2DMPPV) copolymer precursor solution as a raw material for organic components and TEOS and TMB for glass components. Then by drying the solution in vacuum at 5$0^{\circ}C$ for 7days and subsequent heat treatment in vacuum at 15$0^{\circ}C$~30$0^{\circ}C$ for 2h~72h with heating rate of 0.2$^{\circ}C$/min and 1.8$^{\circ}C$/min, the organic-inorganic composites were synthesized. Microstructural evolution of the composites was characterized by DSC, IR spectrocopy, UV/VIS spectroscopy, and TEM. Elimination of the polymer precursor and degradation of the polymer were observed by DSC and Si-O and trans C=C absorption peaks were identified by IR spectra. The polymer was found to be successfully incorporated into the glass matrix and it was confirmed by the absorption peaks from the polymer in the UV/VIS spectra and the TEM results. The absorption peak of the composites was found to shift toward short wavelength side compared to that of the pure polymer and the amount of the blue shift increased with increasing the heat treatment temperature and heat treatment time and with decreasing the heating rate.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.15-19
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• 1998

The purpose of this study, when one prepared lead zirconate thin films by sol-gel method, was to find the preferred direction of crystal growth and dielectric characteristics for ratio of Pb and Zr. We used the Pt/Ti/$SiO_2$/Si substrate, and annealing condition was $800^{\circ}C$ for lminute. When Pb was deficient, preferred direction was <221>. And when it was stoichiometric ratio, they were grown <200> and <221> direction. But they have antiferroelectric properties, they don't appear distinct domain switching.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.649-656
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• 2021

K_0.5Bi_0.5TiO₃ (KBT) thin films were prepared by sol-gel processing for future use in piezoelectric generators. It is believed that the annealing temperature of films plays an important role in the output performance of piezoelectric generators. KBT films prepared on Ni substrates were annealed at 500 ~ 700 ℃. Tetragonal KBT films were formed after annealing process. As the annealing temperature increased, the grain size of KBT films increased. KBT thin films show piezoelectric constant (d₃₃) from 23 to 41 pC/N. The increase of grain size in KBT films brought about output voltage and current in the KBT generators. Also, the increase in the displacement of specimens during bending test resulted in increases in output voltage and current. Although KBT generators showed lower output power than those of generators prepared using NBT films, as reported previously, the KBT films prepared by sol-gel method show applicability as piezoelectric thin films for lead-free nano-generators, along with NBT films.