• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.396-399
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• 2009

Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.

• Journal of the Korean Chemical Society
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• v.48 no.4
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• pp.436-438
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.132.2-132.2
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.133.2-133.2
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• 2000

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.171.2-171
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• 2003

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.04a
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• pp.186.1-186
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.177.1-177
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• 2000

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
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• pp.195.1-195
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• 2000

• Proceedings of the Korean Society of Rheology Conference
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• 2001.09a
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• pp.156.6-157
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• 2001

(No abstract, see full-text)

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.80-81
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• 2004