• 제목/요약/키워드: Sol-gel Process

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Low Temperature Annealed Sol-Gel Aluminum Indium Oxide Thin Film Transistors

  • Hwang, Young-Hwan;Jeon, Jun-Hyuck;Seo, Seok-Jun;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.396-399
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    • 2009
  • Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as $350^{\circ}C$. They exhibit n-type semiconductor behavior, a mobility higher than 19 $cm^2/V{\cdot}s$ and an onto-off current ratio greater than $10^8$.

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