• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• 한국수소및신에너지학회논문집
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• 제18권3호
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• pp.230-237
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• 2007

알칼리 수열합성법에 의해 높은 비표면적을 갖는 티타니아 나노튜브(TiNT)를 합성하였다. 가시광용 광촉매로서의 응용성을 조사하기 위해 CdS 나노입자와 조성(r=TiNT/(CdS+TiNT))을 바꿔가며 일련의 무기 복합필름을 제조하였다. 또한 비교를 위해 티타니아 나노튜브 대신 티타니아 나노입자와 CdS로 구성된 복합체를 역시 제조하였다. 합성된 티타니아 나노튜브는 $200^{\circ}C$ 이상의 소결온도에서 부분적으로 튜브 구조의 붕괴가 시작되었지만, CdS와의 복합체는 $450^{\circ}C$ 까지도 비교적 안정한 구조를 유지하였다. (CdS+TiNT)복합필름은 티타니아 나노입자 복합계와 비교할 때 가시광 흡수 측면에서는 유사한 정도를 나타내었지만, 수소생산 활성과 광전류 발생은 오히려 훨씬 낮은 값을 나타내었다. 결과적으로, 티타니아 나노튜브는 그의 높은 비표면적에도 불구하고 자기들끼리의 응집성이 강하여 CdS와의 전기적 상호작용이 약하며, 특히 얇은 튜브벽 두께(${\sim}3nm$)와 낮은 결정성에 기인하는 약한 광전류 특성은 이의 광촉매로서의 응용성을 상당히 제한하는 요소로 나타났다.

• 한국결정학회지
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• 제2권2호
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• pp.7-12
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• 1991

C13H18N2O3(Mr=250.29)는 단사정계의 P211a의 공간군을 갖고 있으며 a=8.765(4), b=17.679 (3), c=9.238(4)A, p=105.6(3)A, z=4, V= 1378.53A3, A(Mo Ka)=0.71069A, 1:0. 81cm-1, F(000)=536, T=298 이며 1.0 σ(I)보다 큰 강도를 가진 1783개의 회절반점에 대하여 최종 R값은 0.080이다. 직접법에 의하여 구조를 풀었으며 C-H 결합길이와 메칠기는 길이를 고정시켜 이 상적인 기하학적 구조에 맞추어 계단식 대각최소자 승법에 의하여 정밀화하였다 두 에토오키시기중의 하나는 다른 기에 비해 100°나 더 기울어져있다. 결정격자내에 한개의 N-H‥‥0(2.798A) 수소결합이 있어 두 분자를 연결하면서 b-축에 따라 쌓여져 있다.

• 대한방사성의약품학회지
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• 제6권2호
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• pp.75-91
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• 2020

[^99mTc]Tc-Hexamethylpropylene amine oxime (HMPAO) is currently used as a regional cerebral blood flow imaging agent for single photon emission computed tomography (SPECT). The HMPAO ligand exists in two isomeric forms: d,l and meso showing different properties in vivo. Later studies indicated that brain uptake patterns of ^99mTc-complexes formed from separated enantiomers differed. Separation of enantiomers is difficult by fractional crystallizations method. Usually, the substance is obtained in low chemical yield in a time-consuming procedure. Furthermore, the final product still contains some impurity. So we have developed new efficient route for synthesis of R,R- and S,S-HMPAO enantiomeric compounds in 6-steps. Nucleophilic substitution (S_N2) reactions of 2,2-dimethylpropane-1,3-diamine either with S- (1a) or R-methyl2-chloropropanoate (1b) were performed to produce compounds R,R- (2a) or S,S-isomer (2b) derivatives protected with benzylchloroformate (Cbz), respectively. And then Weinreb amide and methylation reaction using Grignard reagent, oxime formation with ketone group and deprotectiion of Cbz group by hydrogenolysis gave S,S- (7a) or R,R-HMPAO (7b), respectively. Entaniomeric compounds were synthesied with high yield and purity without any undesired product. The 7a or 7b kits containing 10 ㎍ SnCl₂-2H₂O were labeled with ^99mTc with high radiolabeling yield (90%).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.264-264
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• 2016

최근에 charge trap flash (CTF) 기술은 절연막에 전하를 트랩과 디트랩 시킬 때 인접한 셀 간의 간섭현상을 최소화하여 오동작을 줄일 수 있으며 낸드 플래시 메모리 소자에 적용되고 있다. 낸드 플래시 메모리는 고집적화, 대용량화와 비휘발성 등의 장점으로 인해 핸드폰, USB, MP3와 컴퓨터 등에 이용되고 있다. 기존의 실리콘 기반의 플래시 메모리 소자는 좁은 밴드갭으로 인해 투명하지 않고 고온에서의 공정이 요구되는 문제점이 있다. 따라서, 이러한 문제점을 개선하기 위해 실리콘의 대체 물질로 산화물 반도체 기반의 플래시 메모리 소자들이 연구되고 있다. 산화물 반도체 기반의 플래시 메모리 소자는 넓은 밴드갭으로 인한 투명성을 가지고 있으며 저온에서 공정이 가능하여 투명하고 유연한 기판에 적용이 가능하다. 다양한 산화물 반도체 중에서 비정질 In-Ga-Zn-O (a-IGZO)는 비정질임에도 불구하고 우수한 전기적인 특성과 화학적 안정성을 갖기 때문에 많은 관심을 받고 있다. 플래시 메모리의 고집적화가 요구되면서 절연막에 high-k 물질을 atomic layer deposition (ALD) 방법으로 적용하고 있다. ALD 방법을 이용하면 우수한 계면 흡착력과 균일도를 가지는 박막을 정확한 두께로 형성할 수 있는 장점이 있다. 또한, high-k 물질을 절연막에 적용하면 높은 유전율로 인해 equivalent oxide thickness (EOT)를 줄일 수 있다. 특히, HfOx와 AlOx가 각각 trap layer와 blocking layer로 적용되면 program/erase 동작 속도를 증가시킬 수 있으며 넓은 밴드갭으로 인해 전하손실을 크게 줄일 수 있다. 따라서 본 연구에서는 ALD 방법으로 AlOx와 HfOx를 게이트 절연막으로 적용한 a-IGZO 기반의 thin-film transistor (TFT) 플래시 메모리 소자를 제작하여 메모리 특성을 평가하였다. 제작 방법으로는, p-Si 기판 위에 열성장을 통한 100 nm 두께의 SiO2를 형성한 뒤, 채널 형성을 위해 RF sputter를 이용하여 70 nm 두께의 a-IGZO를 증착하였다. 이후에 소스와 드레인 전극에는 150 nm 두께의 In-Sn-O (ITO)를 RF sputter를 이용하여 증착하였고, ALD 방법을 이용하여 tunnel layer에 AlOx 5 nm, trap layer에 HfOx 20 nm, blocking layer에 AlOx 30 nm를 증착하였다. 최종적으로, 상부 게이트 전극을 형성하기 위해 electron beam evaporator를 이용하여 platinum (Pt) 150 nm를 증착하였고, 계면 결함을 최소화하기 위해 퍼니스에서 질소 가스 분위기, $400^{\circ}C$, 30 분의 조건으로 열처리를 했다. 측정 결과, 103 번의 program/erase를 반복한 endurance와 104 초 동안의 retention 측정으로부터 큰 열화 없이 메모리 특성이 유지되는 것을 확인하였다. 결과적으로, high-k 물질과 산화물 반도체는 고성능과 고집적화가 요구되는 향후 플래시 메모리의 핵심적인 물질이 될 것으로 기대된다.

• 대한핵의학회지
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• 제24권1호
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• pp.49-55
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• 1990

For the development of $^{99m}Tc-labelled$ 3-iodo-2,4,6-trimethyl-iminodiacetic acid $(^{99m}Tc-IOTIDA)$, various experiments such as synthesis of IOTIDA, establishment of labelling conditions, determination of radiochemical purity, examination of stability, and organ distribution of rat were carried out. 1) IOTIDA was synthesized with a total yield of 42% from the starting material of 2,4-6-trimethylaniline via chloroacetylation, iodination, and condensation with iminodiacetic acid (IDA). 2) Freeze-dried instant labelling kits were prepared from aqueous solution $(pH\;5.8\sim6.0)$ so as to contain 40 mg IDA compound and 0.4 mg $SnCl_2$, per vial. Labelling of the contents of kit vials with $Na^{99m}TcO_4$, exhibited formation of two kinds of complex which was identified by ITLC-SA. After labelling, complex ( I ) was gradually converted to complex (II) with time. Labelling yield and radiochemical purity were above 99.5% based on the two complexes over-all. 3) $^{99m}Tc-IOTIDA$ maintained high radiochemical purity of above 99% until 6 hours after preparation at room temperature. Instant labelling kits stored at $4^{\circ}C$ for 6 month period also exhibited high labelling yield of above 99%. 4) Results obtained from animal experiments showed that most of the $^{99m}Tc-IOTIDA$ was rapidly excreted through hepatobiliary track into the intestines but with negligible renal excretion.

• 센서학회지
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• 제32권3호
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• pp.169-173
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• 2023

With the increasing concern of global warming caused by greenhouse gases owing to the recent industrial development, there is a growing need for advanced technology to control these emissions. Among the various greenhouse gases, nitrogen dioxide (NO₂) is a major contributor to global warming and is mainly released from sources, such as automobile exhaust and factories. Although semiconductor-type NO₂ gas sensors, such as SnO₂, have been extensively studied, they often require high operating temperatures and complicated manufacturing processes, while lacking selectivity, resulting in inaccurate measurements of NO₂ gas levels. To address these limitations, a novel sensor using PbS quantum dots (QDs) was developed, which operates at low temperatures and exhibits high selectivity toward NO₂ gas owing to its strong oxidation reaction. Furthermore, the use of P3HT conductive polymer improved the thin film quality, reactivity, and reaction rate of the sensor. The sensor demonstrated the ability to accurately measure NO₂ gas concentrations ranging from 500 to 100 ppm, with a 5.1 times higher sensitivity, 1.5 times higher response rate, and 1.15 times higher recovery rate compared with sensors without P3HT.

• 센서학회지
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• 제20권5호
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• pp.317-321
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• 2011

A Micro platform for micro gas sensor consisted of micro heater, insulator, and sensing electrode on 2 ${\mu}m$ thick $SiN_x$ membrane. Three types of micro platforms were designed and fabricated with membrane sizes. Total size of micro platform was 2.6 mm by 2.6 mm. Measured power consumptions were 28 mW, 28 mW, and 32.5 mW for Type 1, Type 2, and Type 3. At this moment, temperatures of membranes on the platforms were $295^{\circ}C$, $297^{\circ}C$, and $296^{\circ}C$, respectively. Fabricated micro platform considered appropriate to apply for low power consumption micro gas sensor. Micro gas sensors were prepared by the sequence that $SnO_2$ nanopowder pastes were dropped on membrane of Type 1 platforms, dried in oven, heat-treated with micro heaters in platforms. One of the micro gas sensors was tested for gas response to 1157 ppm, 578 ppm, and 231 ppm of methane and 1.68 ppm, 0.84 ppm, and 0.42 ppm of $NO_2$.

• 한국표면공학회지
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• 제47권5호
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• pp.239-243
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• 2014

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.