• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.37.1-37.1
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• 2000

• 한국전기화학회:학술대회논문집
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• 2001.04a
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• pp.42-42
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.128-129
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• 1999

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.11a
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• pp.10-12
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• 1998

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.476-482
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• 1997

A portable electronic nose system has been fabricated and characterized using an oxide semiconductor gas sensor array and pattern recognition techniques such as principal component analysis and back-propagation artificial neural network. The sensor array consists of six thick-film gas sensors whose sensing layers are Pd-doped $WO_{3}$, Pt-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$ + Pd coated layer, $Al_{2}O_{3}$-doped ZnO and $PdCl_{2}$-doped $SnO_{2}$. The portable electronic nose system consists of an 16bit Intel 80c196kc as CPU, an EPROM for storing system main program, an EEPROM for containing optimized connection weights of artificial neural network, an LCD for displaying gas concentrations. As an application the system has been used to identify 26 carbon monoxide/hydrocarbon (CO/HC) car exhausting gases in the concentration range of CO 0%/HC 0 ppm to CO 7.6%/HC 400 ppm and the identification has been successfully demonstrated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1120-1127
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• 2013

In this paper, novel chip-on-chip(CoC) flip-chip bump structures using chip-on-wafer(CoW) process technology are proposed, designed and fabricated, and their microwave frequency responses are analyzed. With conventional bumps of Cu pillar/SnAg and Cu pillar/Ni/SnAg and novel Polybenzoxazole(PBO)-passivated bumps of Cu pillar/SnAg, Cu pillar/Ni/SnAg and SnAg with the deposition option of $2^{nd}$ Polyimide(PI2) layer on the wafer, 10 kinds of CoC samples are designed and their frequency responses up to 20 GHz are investigated. The measurement results show that the bumps on the wafers with PI2 layers are better for the batch flip-chip process and have average insertion loss of 0.14 dB at 18 GHz. The developed bump structures for chips with fine-pitch pads show similar or slightly better insertion loss of 0.11~0.14 dB up to 18 GHz, compared with that of 0.13~0.17 dB of conventional bump structures in this study, and we find that they could be utilized in various microwave packages for high integration density.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.27-36
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• 2007

In this study, we investigated the interfacial reactions between various Sn-Ag-Cu(SAC) solder alloys and ENIG(Electroless Ni Immersion Gold) and Cu-OSP(Organic Solderability Preservative) pad finish. In the case of the interfacial reaction between Sb added SAC solder and ENlf thinner P-rich Ni layer was formed at the interface. In the case of the interfacial reaction between Ni added SAC solder and Cu-OSP, the uniform $Cu_6Sn_5$, intermetallic compounds(IMCs) were formed and $Cu_6Sn_5$ grain did not grow after multiple reflows. Thinner $Cu_3Sn$ IMCs were farmed at the interface between $Cu_6Sn_5$ and Cu-OSP after $150^{\circ}C$ thermal aging.

• Korean Journal of Materials Research
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• v.7 no.4
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• pp.287-294
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• 1997

(NdㆍDy)-(FeㆍCoㆍAIㆍM)-B 합금에 Sn,Mo등을 첨가하여 그에 따른 미세구조와 열적안정성 및 자기적 특성 변화를 조사하였다. Sn과 Mo의 첨가는 (NdㆍDy)-(FeㆍCoㆍAIㆍM)-B 합금리본의 큐리온도를 크게 향상시켰으며 자기특성, 특히 보자력을 1KOe이상 증가시켰다. 그리고 이러한 현저한 보자력 증가는 입계형 defect인 disturbed grain boundary defect에 기인하는 것이라 판단되었다. 또한 Sn과 Mo 첨가원소는 irreversible loss를 각각 4%와 6% 감소시켜 리본자석의 열적안정성을 향상시켰다. 이는 Sn과 Mo의 첨가가 보자력을 크게 증가시켰기 때문이다. 한편 (NdㆍDy)-(FeㆍCoㆍAIㆍM)-B 리본자석들의 열저항온도(heat resistance temperature)는 irreversible loss와 직선관계를 이루었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.766-772
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• 1986

SnO2/Pt CO gas sensors operating at relatively low temperature were fabricated, and their performance characteristics were measured. When the mixing weight ratio of SnO2/Pt was 99.5/0.5, a good sensitivity to CO gas was obtained. And the experimental results were in consistent with the gas sensing model. The optimum operating, temperature range of the fabricated devices was 50-80\ulcorner and the response time was 15 sec. at 80\ulcorner in 1000 ppm CO ambient. The humidity dependence of sensitibity to CO gas could be reduced by adding hydrophokbic silica to the mixture of SnO2 and Pt. For the practical application of the fabricated devices, a CO gas alarming system has been developed.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.305-309
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• 2012

In this study, ZnO nanorods and $SnO_2$-CuO heterogeneous oxide were grown on membrane-type gas sensor platforms and the sensing characteristics for carbon monoxide (CO) were studied. Diaphragm-type gas sensor platforms with built-in Pt micro-heaters were made using a conventional bulk micromachining method. ZnO nanorods were grown from ZnO seed layers using the hydrothermal method, and the average diameter and length of the nanorods were adjusted by changing the concentration of the precursor. Thereafter, $SnO_2$-CuO heterogeneous oxide thin films were grown from evaporated Sn and Cu thin films. The average diameters of the ZnO nanorods obtained by changing the concentration of the precursor were between 30 and 200 nm and the ZnO nanorods showed a sensitivity value of 21% at a working temperature of $350^{\circ}C$ and a carbon monoxide concentration of 100 ppm. The $SnO_2$-CuO heterogeneous oxide thin films showed a sensitivity value of 18% at a working temperature of $200^{\circ}C$ and a carbon monoxide concentration of 100 ppm.