• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.473-478
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• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......

• Journal of the Korea Convergence Society
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• v.13 no.3
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• pp.197-202
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• 2022

The CZTS solar cell is a thin film solar cell using an absorption layer composed of Cu, Zn, Sn, Se, and S, and is cheaper than a CIGS solar cell using In and Ga and more eco-friendly than a perovskite and CdTe solar cell using Pb and Cd. In this study, we conducted a bending test for flexible CZTS solar cells. Experiments were conducted in the direction of inner benidng with compressive stress and outer bending with tensile stress, and during the number of bending 1,000 times with a radius of curvature of 50 mmR, the efficiency of the solar cell decreased by up to 12.7%, and the biggest cause of efficiency reduction in both directions was a large decrease in parallel resistance.