• Korean Journal of Metals and Materials
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• v.47 no.12
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• pp.842-851
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• 2009

The long-term reliability of Sn-0.3wt%Ag-0.7wt%Cu solder joints was evaluated and compared with Sn-3.0wt%Ag-0.5wt%Cu under thermal shock conditions. Test vehicles were prepared to use Sn-0.3Ag-0.7Cu and Sn-3.0Ag-0.5Cu solder alloys. To compare the shear strength of the solder joints, 0603, 1005, 1608, 2012, 3216 and 4232 multi-layer ceramic chip capacitors were used. A reflow soldering process was utilized in the preparation of the test vehicles involving a FR-4 material-based printed circuit board (PCB). To compare the shear strength degradation following the thermal shock cycles, a thermal shock test was conducted up to 2,000 cycles at temperatures ranging from $-40^{\circ}C$ to $85^{\circ}C$, with a dwell time of 30 min at each temperature. The shear strength of the solder joints of the chip capacitors was measured at every 500 cycles in each case. The intermetallic compounds (IMCs) of the solder joint interfaces werealso analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results showed that the reliability of Sn-0.3Ag-0.7Cu solder joints was very close to that of Sn-3.0Ag-0.5Cu. Consequently, it was confirmed that Sn-0.3Ag-0.7Cu solder alloy with a low silver content can be replaced with Sn-3.0Ag-0.5Cu.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1119-1121
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• 1993

The PSN-PT-PZ ceramics doped with the Mn-oxide(0.5wt%) were fabricated by the mixed oxide method at 1250($^{\circ}C$) for 2(hr) and then the dielectric and pyroelectric properties were investigated with the compositions. In the 0.05PSN-0.4PT-0.55PZ specimen with 0.5(wt%) $MnO_2$, the pyroelectric coefficient was $6.6{\times}10^{-8}(C/Cm^2^{\circ}C)$, and the figure of merits for pyroelectric current and voltage were $27{\times}10^{-9},\;45{\times}10^{-12}$(C.Cm/J), respectibly.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.72-72
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• 2005

• Journal of Advanced Marine Engineering and Technology
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• v.19 no.2
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• pp.27-35
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• 1995

액체 상태인 Pb-Sn 합금에 의한 이중확산유동에 대해 체비세프 콜로케이션 기법을 이용하여 수치해석하였다. 온도차에 의한 부력과 농도차에 의한 부력이 작을때에는 유동형태가 서서히 준정상상태에 이르러 아무런 진동현상을 볼 수 없다. 부력이 증가함에 따라 유동은 수직 농도 경계층을 파괴하여 플륨(Plume)형태의 유동을 생성시키고, 이는 시스템 내부로 성장한 후 소멸된다. 이러한 현상이 반복되면서 높은 주파수의 진동현상을 관찰할 수 있다.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.545-551
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• 2012

In semiconductor manufacturing, the circuit integrity of packaged BGA devices is tested by measuring electrical resistance using test sockets. Test sockets have been reported to often fail earlier than the expected life-time due to high contact resistance. This has been attributed to the formation of Sn oxide films on the Au coating layer of the probe pins loaded on the socket. Similar to contact failure, and known as "fretting", this process widely occurs between two conductive surfaces due to the continual rupture and accumulation of oxide films. However, the failure mechanism at the probe pin differs from fretting. In this study, the microstructural processes and formation mechanisms of Sn oxide films developed on the probe pin surface were investigated. Failure analysis was conducted mainly by FIB-FESEM observations, along with EDX, AES, and XRD analyses. Soft and fresh Sn was found to be transferred repeatedly from the solder bump to the Au surface of the probe pins; it was then instantly oxidized to SnO. The $SnO_2$ phase is a more stable natural oxide, but SnO has been proved to grow on Sn thin film at low temperature (< $150^{\circ}C$). Further oxidation to $SnO_2$ is thought to be limited to 30%. The SnO film grew layer by layer up to 571 nm after testing of 50,500 cycles (1 nm/100 cycle). This resulted in the increase of contact resistance and thus of signal delay between the probe pin and the solder bump.

• Journal of Welding and Joining
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• v.30 no.2
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• pp.65-69
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• 2012

Environmental and health concerns over the lead have led to investigation of the alternative Pb-free solders to replace commonly used Pb-Sn solders in microelectronic packaging application. The leading candidates for lead-free solder alloys are presently the near eutectic Sn-Ag-Cu alloys. Therefore, extensive studies on reliability related with the composition have been reported. However, the insufficient drop property of the near eutectic Sn-Ag-Cu alloys has demanded solder compositions of low Ag content. In addition, the solder interconnections in automobile applications like a smart box require significantly improved vibration resistance. Therefore, this study investigated the effect of alloying elements (Ag, Bi, In) on the vibration fatigue strength. The vibration fatigue was conducted in 10~1000Hz frequency and 20Grms. The interface of the as-soldered cross section close to the Cu pad indicated the intermetallic compound ($Cu_6Sn_5$) regardless of solder composition. The type and thickness of IMC was not significantly changed after the vibration test. It indicates that no thermal activities occurred significantly during vibration. Furthermore, as a function of alloying composition, the vibration crack path was investigated with a focus on the IMCs. Vibration crack was initiated from the fillet surface of the heel for QFP parts and from the plating layer of chip parts. Regardless of the solder composition, the crack during a vibration test was propagated as same as that during a thermal fatigue test.

• Corrosion Science and Technology
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• v.6 no.2
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• pp.50-55
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• 2007

The smaller size and higher integration of advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, electronic components respond to applied voltages by electrochemical ionization of metal and the formation of a filament, which leads to short-circuit failure of an electronic component, which is termed electrochemical migration. This work aims to evaluate electrochemical migration susceptibility of the pure Sn, Sn-3.5Ag, Sn-3.0Ag-0.5Cu solder alloys in $Na_{2}SO_{4}$. The water drop test was performed to understand the failure mechanism in a pad patterned solder alloy. The polarization test and anodic dissolution test were performed, and ionic species and concentration were analyzed. Ag and Cu additions increased the time to failure of Pb-free solder in 0.001 wt% $Na_{2}SO_{4}$ solution at room temperature and the dendrite was mainly composed of Sn regardless of the solders. In the case of SnAg solders, when Ag and Cu added to the solders, Ag and Cu improved the passivation behavior and pitting corrosion resistance and formed inert intermetallic compounds and thus the dissolution of Ag and Cu was suppressed; only Sn was dissolved. If ionic species is mainly Sn ion, dissolution content than cathodic deposition efficiency will affect the composition of the dendrite. Therefore, Ag and Cu additions improve the electrochemical migration resistance of SnAg and SnAgCu solders.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.34-40
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• 2000

The $Pb_{0.94}Y_{0.04}[(Zr_{0.6}Sn_{0.4})_{0.915}Ti_{0.085}]O_3$ ceramics which corresponded to the antiferroelectric-ferroelectric phase boundary composition were prepared for digital-type-piezoelectric/electrostrictive device application. Their dielectric, field-induced polarization (P) and strain (X) behaviors were studied with variations in sintering condition and excess PbO content. The orthorhombic structure of specimens was hardly affected either by excess PbO addition or sintering temperature. With increasing excess PbO content, grains tended to be smaller and rounded ones, and the optimum sintering temperature was lowered. Excess PbO addition stabilized the antiferroelectric phase of the specimen effectively, which was confirmed by P-E and X-E analyses. Also the digital-type-strain character was found to be enhanced despite of slight increase in phase transition (AFE-FE) field and electrical resistivity, and decrease in maximum strain. These results were explained in terms of possible lattice defects and domain wall motion.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.35-40
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• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.