• 한국표면공학회지
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• 제29권6호
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• pp.876-879
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• 1996

The effect of oxygen vacancy and Sn donor on carrier density for Indium Tin oxide (ITO) and Indium oxide (InO) films has been investigated. Hot-cathode Penning discharge sputtering (HC-PDS) in the mixed gasses of argon and oxygen was applied to fabricate the ITO and InO films. Density of oxygen vacancy was estimated using a high-energy ion beam technique. The electrical properties of the films such as resistivity, carrier density and mobility were estimated by Van der Pauw method. The doping efficiency of oxygen vacancy could be obtained from the relationship between oxygen vacancy and carrier density. The doping efficiency of oxygen vacancy for ITO films resulted in a quite small value. Comparing the doping efficiencies of ITO and InO films, the effect of Sn donor on carrier density was also discussed.

• 한국재료학회지
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• 제28권10호
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• pp.564-569
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• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

• 한국세라믹학회지
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• 제30권9호
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• pp.701-708
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• 1993

Pd-doped SnO2 thin films for hydrogen gas sensing were fabricated by reactive fo magnetron sputtering and were studied on effects of film thickness and Pd doping content. Pd doping caused the optimum sensor operation temperature to reduce down to ~25$0^{\circ}C$ and also enhanced gas sensitivity, compared with undoped SnO2 film. Gas sensitivity depended on the film thickness. The sensitivity increased with decreasing the film thickness, showing maximum sensitivities at the thickness of 730$\AA$ and 300~400$\AA$ for the undoped SnO2 and the Pd-doped SnO2 film, respectively. Further decrease of the film thickness beyond these thickness ranges, however, resulted in the reduction of sensitivity again.

• 한국초전도ㆍ저온공학회논문지
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• 제16권2호
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• pp.33-35
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• 2014

We report here results of a study of superconductivity in the ($Ta_{1-x} Sn_x)Sr_2EuCu_2O_z$ system. We observe resistive superconducting transitions for the samples with x = 0.15-0.3, and the highest superconducting transition has been achieved for the sample with x = 0.2 which reveals onset $T_c$ of 43 K and zero-resistivity of 25 K. Thermoelectric power measurements indicate that Sn doping introduces holes into the system and thereby superconductivity can be achieved in the ($Ta_{1-x} Sn_x)Sr_2EuCu_2O_z$ system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.262-263
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• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.304-308
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• 2000

WO$_3$/SnO$_2$ceramics has been suggested as an effective sensing material for monitoring offensive odor or pollutant gases. This work was focussed on improving long-term stability, which has been a principal problem generally taking place in SnO$_2$semiconductor gas sensor. Miniaturized thick film gas sensors were fabricated by screen printing technique. Two types of sensor materials, W doped SnO$_2$and WO$_3$mixed SnO$_2$, were comparatively investigated on those long-term stability and sensitivites to several gases. Small amount of W doping(0.1 mol%) into SnO$_2$largely improved the long-term stability. The W(0.1 mol%) doped SnO$_2$gas sensor had higher sensitivities to both acetone and alcohol compared with WO$_3$(5 wt%) mixed SnO$_2$gas sensor. On the contrary, WO$_3$(5 wt%) mixed SnO$_2$gas sensor showed more superior sensitivity to cigarette smoke due to larger W content.

• Journal of Electrochemical Science and Technology
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• 제6권4호
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• pp.116-120
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• 2015

Lithium diffusivity of fluorine-free and -doped tin-nickel (Sn-Ni) film model electrodes with improved interfacial (solid electrolyte interphase (SEI)) stability has been determined, utilizing variable rate cyclic voltammetry (CV). The method for interfacial stabilization comprises fluorine-doping on the electrode together with the use of electrolyte including fluorinated ethylene carbonate (FEC) solvent and trimethyl phosphite additive. It is found that lithium diffusivity of Sn is largely dependent on the fluorine-doping on the Sn-Ni electrode and interfacial stability. Lithium diffusivity of fluorine-doped electrode is one order higher than that of fluorine-free electrode, which is ascribed to the enhanced electrical conductivity and interfacial stabilization effect.

• 한국세라믹학회지
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• 제29권4호
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• pp.319-327
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• 1992

Sb-doped SnO2 films were formed on Corning glass 7059 substrate by chemical vapor deposition using simulataneous hydrolysis of SnCl4 and SbCl5. Fairly good transparent conducting film with a low resistivity of ~6$\times$10-4{{{{ OMEGA }}cm and high average optical transparency above ~85% in the range of visible light was obtained at the deposition condition of 50$0^{\circ}C$ and input-gas ratio, [Psbcl5/Psncl4] of 0.05. Film conductivity was improved without loosing optical transparency at light doping of Sb and found to be due to the increase of electron concentration. However, high doping of Sb into SnO2 film largely deteriorated conductivity, optical transparency and crystallinity of the film.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.74.2-74.2
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• 2000

• Advances in nano research
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• 제7권1호
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• pp.13-24
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• 2019

Well-crystalline $SnO_2$ nanoparticles of 4-5 nm size with different In contents were synthesized by hydrothermal process at relatively low temperature and characterized by transmission electron microscopy (TEM), microRaman spectroscopy and photoluminescence (PL) spectroscopy. Indium incorporation in $SnO_2$ lattice is seen to cause a lattice expansion, increasing the average size of the nanoparticles. The fundamental phonon vibration modes of $SnO_2$ lattice suffer a broadening, and surface modes associated to particle size shift gradually with the increase of In content. Incorporation of In drastically enhances the PL emission of $SnO_2$ nanoparticles associated to deep electronic defect levels. Although In incorporation reduces the band gap energy of $SnO_2$ crystallites only marginally, it affects drastically their dye degradation behaviors under UV illumination. While the UV degradation of methylene blue (MB) by undoped $SnO_2$ nanoparticles occurs through the production of intermediate byproducts such as azure A, azure B, and azure C, direct mineralization of MB takes place for In-doped $SnO_2$ nanoparticles.