• International Journal of Internet, Broadcasting and Communication
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• v.12 no.2
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• pp.30-36
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• 2020

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

• Wind and Structures
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• v.38 no.3
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• pp.203-214
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• 2024

Large-span cantilevered roof represents a unique type of structure that is vulnerable to wind loads. Inspired by the need to maximumly reducing the rooftop wind loads, this study examined the feasibility of positioning vented slots on the leading edge, and the effectiveness of such aerodynamic mitigation measures are assessed via both physical and numerical simulations. The reliability of numerical simulation was evaluated via comparisons with the wind tunnel tests. The results indicated that, the variation of venting hole arrangement can cause significant change in the rooftop wind load characteristics. For the cases involved in this study, the maximum reduction of mean and peak wind suction coefficients are found to be 9% and 8% as compared to the original circular slot without venting holes. In addition, the effect of slot shape is also evident. It was shown that the triangular shaped slot tends to increase the wind suction near the leading edge, whereas the hexagonal and octagonal shaped slots are found to decrease the wind suction. In particular, with the installation of octagonal shaped slot, the maximum reduction of wind suction coefficients near the leading edge reaches up to 31% as compared to the circular shaped slot, while the maximum reduction of mean wind suction coefficients is about 30%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.514-522
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• 2000

In this thesis, a two-dimensional active phased array antenna without phase shifter is studied for two-dimensional beam scanning. A designed two-dimensional oscillator-type active array antenna, radiation elements and the oscillator circuits were combined with via-hole and coupled by slot on the opposite ground plane. The operating characteristics are analyzed and experimentally demonstrated , The two-dimensional $4\times4$ elements were designed for the proper coupling strengths and coupling phases by adjusting the width, length and offset position of slot-lines. The fabricated active phased array antenna shows the beam shift characteristics capable of scanning from $-17^{\circ}$ to $18^{\circ}$ with respect to broadside in one dimension, from $-5^{\circ}$ to $10^{\circ}$ in two dimension. The experimental results show that it is possible to use the oscillator-type active phased array antenna as a two-dimensional planar array antenna.