• Title/Summary/Keyword: Sintering temperature

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Sintering Behavior of 2xxx Series Al alloys with Variation of Sintering Temperature (2xxx Al 합금계 혼합분말의 소결온도에 따른 소결거동)

  • 민경호;김대건;장시영;임태환;김영도
    • Journal of Powder Materials
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    • v.10 no.1
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    • pp.40-45
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    • 2003
  • Sintering behavior of 2xxx series Al alloy was investigated to obtain full densification and sound microstructure. The commercial 2xxx series Al alloy powder. AMB2712, was used as a starting powder. The mixing powder was characterized by using particle size analyzer, SEM and XRD. The optimum compacting pressure was 200 MPa, which was the starting point of the "homogeneous deformation" stage. The powder compacts were sintered at $550~630^{\circ}C$ after burn-off process at $400^{\circ}C$. Swelling phenomenon caused by transient liquid phase sintering was observed below $590^{\circ}C$ of sintering temperature. At $610^{\circ}C$, sintering density was increased by effect of remained liquid phase. Further densification was not observed above $610^{\circ}C$. Therefore, it was determined that the optimum sintering temperature of AMB2712 powder was $610^{\circ}C$.}C$.

Comparison of Electrical Properties and AFM Images of DSSCs with Various Sintering Temperature of TiO2 Electrodes (TiO2 전극의 소결 온도에 따른 DSSCs의 전기적 특성 및 AFM 형상 비교)

  • Kim, Hyun-Ju;Lee, Dong-Yun;Lee, Won-Jae;Koo, Bo-Kun;Song, Jae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.6
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    • pp.571-575
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    • 2005
  • In order to improve the efficiency of dye-sensitized solar cell (DSSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature$(350\;to\;550^{\circ}C)$. $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSSCs were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). Below sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively lower due to lower open circuit voltage. Oppositely, above sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively higher due to higher open circuit voltage. In both cases, lower fill factor (FF) was observed. However, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSSCs were mutually complementary, enhancing highest fill factor and efficiency. Such results can be explained in comparison of surface morphology with schematic diagram of energy states on the $TiO_2$ electrode surface. Consequently, it was considered that optimum sintering temperature of a-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

PZTN Sintered at the Low Temperature by the Glass Phase Transient Processing (글래스 천이 공정에 의해 저온소결된 PZTN)

  • Kim Chan Young
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.3
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    • pp.97-102
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    • 2005
  • This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the $950^{\circ}C$ and $1050^{\circ}C$. This was confirmed that the sintering temperature of PZTN was reduced by $950^{\circ}C$ and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties.

Effect of Sintering Additives and Sintering Temperature on Mechanical Properties of the $Si_3N_4$ Composites Containing Aligned $\beta-Si_3N_4$ Whisker (배향된 $\beta-Si_3N_4$ Whisker를 함유하는 $Si_3N_4$ 복합체의 기계적 특성에 미치는 소결조제와 소결온도의 영향)

  • Kim, Chang-Won;Choi, Myoung-Jae;Park, Chan;Park, Dong-Soo
    • Journal of the Korean Ceramic Society
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    • v.37 no.1
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    • pp.21-25
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    • 2000
  • Gas pressure sintered silicon nitride based composites with 5 wt% $\beta$-Si3N4 whiskers were prepared, and the variations depending on sintering additives and sintering temperature were studied. Sintering additives were 6 wt% Y2O3-1 wt% MgO(6Y1M), 6 wt%Y2O3-1 wt% Al2O3(6Y1A), 6 wt% Y2O3-1 wt% SiO2(6Y1S), and whiskers were unidirectionally oriented by a modified tape casting technique. Samples were fully densified by gas pressure sintering at 2148 K and 2273 K. As the sintering temperature increased, the size of large elongated grains was increased. Three point flexural strength of 6Y1M and 6Y1M samples was higher than that of 6Y1S sample, and the strength decreased as the sintering temperature increased. The indentation crack length became shorter for the sample sintered at higher temperature, and the difference between the cracks length parallel to and normal to the direction of whisker alignment was decreased. In case of cracks 45$^{\circ}$off the whisker alignment direction, the crack length anisotropy disappeared.

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Influence of Sintering Additives and Temperature on Fabrication of LPS-SiC (액상소결법에 의한 탄화규소 제조시 소결조제와 온도의 영향)

  • JUNG HUN-CHAE;YOON HAN-KI
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2004.11a
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    • pp.266-270
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    • 2004
  • SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine because it has excellent high temperature strength, low coefficient of thermal expansion, good resistance to oxidation and good thermal and chemical stability etc. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, SiC/SiC composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing jiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of SiC/SiC composites by hot pressing method. In the present work, monolithic Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method in Ar atmosphere at $1800^{\circ}C$ under 20MPa using $Al_2O_3,\;Y_2O_3\;and\;SiO_2$ as sintering additives in order to low sintering temperature and sintering pressure. The starting powder was high purity $\beta-SiC$ nano-powder with all average particle size of 30mm. The characterization of LPS-SiC was investigated by means of SEM and three point bending test. Base on the composition of sintering additives-, microstructure- and mechanical property correlation, tire compositions of sintering additives are discussed.

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Effect of Screen Printing and Sintering Conditions on Properties of Thick Film Resistor on AlN Substrate (인쇄 및 소결조건이 AlN 기판용 후막저항체의 특성에 미치는 영향)

  • Koo, Bon Keup
    • Journal of the Korean Ceramic Society
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    • v.51 no.4
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    • pp.344-349
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    • 2014
  • $RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

Electrical Properties and Dielectric Characteristics CCT-doped Zn/Pr-based Varistors with Sintering Temperature

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.3
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    • pp.80-84
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    • 2009
  • The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

A Study on the Mechanical Properties Based on Frit Addition in 3Y-TZP Zirconia Composition (3Y-TZP Zirconia 조성에서 Frit의 첨가에 의한 기계적 특성 연구)

  • Kwon, Eun-Ja;Lee, Gyu-Sun;Lee, Chae-Hyun
    • Journal of Technologic Dentistry
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    • v.29 no.1
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    • pp.49-57
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    • 2007
  • This study was to add crushed frit with different grain sizes to 3Y-TZP so that it could determine the mechanical properties depending on sintering temperature. In this study, 3 types specimens were prepared in powder with respective additions of 20wt.% frit, which was sized through 24-, 48- and 72-hour ball milling with zirconia. Then, sintered pellets were tested in experiments under the temperature variations for different compositions. As a result, this study came to the following findings: 1. It was found that the higher sintering temperature and the longer ball milling time of frit led to the higher sintered density. 2. Bending strength tended to increase with higher sintering temperature and longer ball milling time of frit. 3. Hardness tended to increase with higher sintering temperature and longer ball milling time of frit. 4. However, it was found that fracture toughness didn't vary significantly depending on sintering temperature. From these findings, it was concluded that the smaller frit grain size and the narrower particle size distribution of frit lead to the better mechanical properties.

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Low Temperature Processing of Nano-Sized Magnesia Ceramics Using Ultra High Pressure (초고압을 이용한 나노급 마그네시아 분말의 저온 소결 연구)

  • Song, Jeongho;Eom, Junghye;Noh, Yunyoung;Kim, Young-Wook;Song, Ohsung
    • Journal of the Korean Ceramic Society
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    • v.50 no.3
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    • pp.226-230
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    • 2013
  • We performed high pressure high temperature (HPHT) sintering for the 20 nm MgO powders at the temperatures from $600^{\circ}C$ to $1200^{\circ}C$ for only 5 min under 7 GPa pressure condition. To investigate the microstructure evolution and physical property change of the HPHT sintered MgO samples, we employed a scanning electron microscopy (SEM), density and Vickers hardness measurements. The SEM results showed that the grain size of the sintered MgO increased from 200 nm to $1.9{\mu}m$ as the sintering temperature increased. The density results showed that the sintered MgO achieved a more than 95% of the theoretical density in overall sintering temperature range. Based on Vickers hardness test, we confirmed that hardness increased as temperature increased. Our results implied that we might obtain the dense sintered MgO samples with an extremely short time and low temperature HPHT process compared to conventional electrical furnace sintering process.

Dielectric and Piezoelectric Properties of Low Temperature Sintering PSN-PZI Ceramics with BiFe3 Substitution (BiFe3첨가에 따른 저온소결 PSN-PZT세라믹스의 유전 및 압전 특성)

  • 류주현;정광현;정영호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.492-496
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    • 2004
  • In this study, (0.96 -x)(PSN-PZT)-xBF-0.04 PNW+0.3wt%MnO$_2$+0.6wt%CuO ceramics were fabricated with the variations of the amount of BiFeO$_3$substitution and sintering temperature for the development of modified ceramics which can be sintered in the low temperature($\leq$100$0^{\circ}C$ ), and their microstructural, dielectric and piezoelectric characteristics were investigated. As the amount of BiFeO$_3$ substitution was increased, the density, mechanical quality factor(Q$_{m}$) and electromechanical coupling factor(k$_{p}$) showed the maximum value at each of sintering temperature. At sintering temperature of 98$0^{\circ}C$ and BiFeO$_3$substitution of 2 mol%, the density, dielectric constant and electromechanical coupling factor(k$_{p}$) showed the maximum value of 7.84 g/㎤, 1415 and 0.49, respectively. And at sintering temperature of 95$0^{\circ}C$ and BiFeO$_3$substitution of 3mol%, mechanical quality factor showed the maximum value of 1062. 1062.