• Title/Summary/Keyword: Sintering mechanisms

Search Result 41, Processing Time 0.028 seconds

Electrical Conduction Mechanisms of $RuO_2$ Based Thick Film Resistor ($RuO_2$계 후막저항체의 전기전도기구)

  • 구본급;김호기
    • Journal of the Korean Ceramic Society
    • /
    • v.31 no.12
    • /
    • pp.1529-1535
    • /
    • 1994
  • Electrical conduction mechanisms of RuO2-based thick film resistors were investigated with frequency depandence on AC conductivity. Electrical conduction mechanisms of lower resistivity system (100{{{{ OMEGA }}/sq) sintered at 600~90$0^{\circ}C$ were all metallic conduction mechanism. In case of higher resistivity (10K{{{{ OMEGA }}/sq) system, the electrical conduction mechanisms were very depenent on sintering temperature. When sintering temperature was $600^{\circ}C$, the electrical conduction mechamism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism was changed from ionic to hopping conduction mechanism.

  • PDF

Isolated Pore Generation Mechanism and Mechanical Properties in MAS System with 3Y-TZP (MAS계에서 3Y-TZP 첨가에 따른 독립 기공 생성기구와 기계적 성질)

  • 최성철;박현철
    • Journal of the Korean Ceramic Society
    • /
    • v.30 no.11
    • /
    • pp.881-890
    • /
    • 1993
  • MAS system has narrow sintering temp. range due to the liquid phae sintering and thereby densify rapidly. And especially, its poor mechanical properties limitedthe industrial application. In this study, the improvement of mechanical properties and densification is suggested by the consideration of the toughening mechanisms and isolated pore generation mechanism which is derived by the liquid phase sintering theory in 3Y-TZP added composites. After Pressureless sintering up to 140$0^{\circ}C$ for 5hr, the dihedral angle and contact angle are analyzed by the observation of microstructure. As a result of microstructure analysis, the sintering stage of the specimen sintered for 5hr is analyzed as solid-skeleton stage. And the isolated pore generation mechanisms are considered as (1) The swelling of the liquid phase is predominent due to the facts that dihedral angle is larger than 60$^{\circ}$, contact angle is large and that liquid volume fraction is smaller than 10%. (2) The porous characteristics of the MAS system is also suggested as: the SiO2-rich liquid film is firstly formed at the srface and therefore this reduces the contiguity of the pore, which induces the isolated pore. The strength and fracture toughness increased with the addition of 3Y-TZP and the main fracture toughness improvement mechanisms are analyzed as the crack deflection.

  • PDF

Computer Simulation of Sintering and Grain Growth

  • Matsubara, Hideaki
    • Journal of Powder Materials
    • /
    • v.5 no.4
    • /
    • pp.324-328
    • /
    • 1998
  • This paper is aimed to study the computer simulation of sintering process for ceramics by Monte Carlo and molecular dynamics methods. Plural mechanisms of mass transfer were designed in the MC simulation of sintering process for micron size particles; the transfer of pore lattices for shrinkage and the transfer of solid lattices for grain growth ran in the calculation arrays. The MD simulation was performed in the case of nano size particles of ionic ceramics and showed the characteristic features in sintering process at atomic levels. The MC and MD simulations for sintering process are useful for microstructural design for ceramics.

  • PDF

Fundamental Aspects of Resistance Sintering under Ultrahigh Pressure Consolidation

  • Zhou, Zhangjian;Kim, Ji-Soon;Yum, Young-Jin
    • Journal of Powder Materials
    • /
    • v.19 no.1
    • /
    • pp.19-24
    • /
    • 2012
  • The consolidation results of fine tungsten powders, W-Cu composite and W/Cu FGM by using a novel method combining resistance sintering with ultra high pressure have been reviewed. The densification effects of the consolidation parameters, including pressure, input power and sintering time, have been investigated. The sintering mechanism of this method was quite different from other sintering methods. Particle rearrangement, sliding, distortion and crushing due to the ultra high pressure are the dominant mehanisms at the initial stage, then the dominant sintering mechanisms are transient arc-fused processes controlled by the input power.

Behaviors and Process Analyses of Spark Sintering for Powders Having a Low Sinterability

  • Matsugi, K.
    • Journal of Powder Materials
    • /
    • v.19 no.2
    • /
    • pp.127-133
    • /
    • 2012
  • The sintering behaviors and process parameters of some compounds (carbides, oxides, sulfides, borides) were investigated experimentally. These compounds were successfully consolidated and showed high densities. Some unique phenomena such as retardation of grain growth, suppression of thermal decomposition and maintenance of initial non-equilibrium phases, were observed by the proper control of process in spark sintering.

A Study on the Sintering and Mechanism of Crystallization Prevention of Alumina Filled Borosilicate Glass (알루미나를 충전재로 첨가한 붕규산염 유리의 소결 및 결정화 방지기구에 대한 연구)

  • 박정현;이상진;성재석
    • Journal of the Korean Ceramic Society
    • /
    • v.29 no.12
    • /
    • pp.956-962
    • /
    • 1992
  • The predominant sintering mechanisms of low firing temperature ceramic substrate which consists of borosilicate glass containing alumina as a filler are the rearrangement of alumina particles and the viscous flow of glass powders. In this system, sintering condition depends on the volume ratio of alumina to glass and on the particle size. When the substrate contains about 35 vol% alumina filler and the average alumina particle size is 4 $\mu\textrm{m}$, the best firing condition is obtained at the temperature range of 900∼1000$^{\circ}C$. The extensive rearrangement behavior occurs at these conditions, and the optimum sintering condition is attained by smaller size of glass particles, too. The formation of cristobalite during sintering causes the difference of thermal expansion coefficient between the substrate and Si chip. This phenomenon degradates the capacity of Si chip. Therefore, the crystallization should be prevented. In the alumina filled borosilicate glass system, the crystallization does not occur. This effect may have some relation with aluminum ions in alumina. For aluminum ions diffuse into glass matrix during sintering, functiong as network former.

  • PDF

Atomistic Simulation of Sintering Mechanism for Copper Nano-Powders

  • Seong, Yujin;Hwang, Sungwon;Kim, See Jo;Kim, Sungho;Kim, Seong-Gon;Kim, Hak Jun;Park, Seong Jin
    • Journal of Powder Materials
    • /
    • v.22 no.4
    • /
    • pp.247-253
    • /
    • 2015
  • The sintering mechanisms of nanoscale copper powders have been investigated. A molecular dynamics (MD) simulation with the embedded-atom method (EAM) was employed for these simulations. The dimensional changes for initial-stage sintering such as characteristic lengths, neck growth, and neck angle were calculated to understand the densification behavior of copper nano-powders. Factors affecting sintering such as the temperature, powder size, and crystalline misalignment between adjacent powders have also been studied. These results could provide information of setting the processing cycles and material designs applicable to nano-powders. In addition, it is expected that MD simulation will be a foundation for the multi-scale modeling in sintering process.

Effect of Sintering Atmosphere on the Densification and Grain Growth of Uranium Dioxide at the Final-Stage Sintering (소결 분위기에 따른 이산화 우라늄의 치밀화 및 입자성장)

  • 이영우
    • Journal of Powder Materials
    • /
    • v.4 no.3
    • /
    • pp.214-221
    • /
    • 1997
  • The densification and grain growth mechanisms of $UO_{2+x}$ in $H_2$ and in $CO_2$ have been investigated. Uranium dioxide powder compacts were sintered at 1$700^{\circ}C$ in $H_2$ or at 110$0^{\circ}C$ in $CO_2$ for various times from 0.5 h to 16 h. The grain size and density of the specimens were measured. From the measured data, the mechanisms of the densification and grain growth were determined by use of available kinetic equations which express the relations between densification and grain growth. In both atmospheres, it has been found that the densification was controlled by the lattice diffusion and the grain growth by the surface diffusion of atoms around pores. It appears that the surface diffusivity as well as the lattice diffusivity increase considerably with the increase in O/U ratio in the specimen.

  • PDF

$\beta$-SiC Formation Mechanisms in Si Melt-C-SiC System (용융 Si-C-SiC계에서 $\beta$-SiC 생성기구)

  • 서기식;박상환;송휴섭
    • Journal of the Korean Ceramic Society
    • /
    • v.36 no.6
    • /
    • pp.655-661
    • /
    • 1999
  • ${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

  • PDF