• Title/Summary/Keyword: Sintering additions

Search Result 76, Processing Time 0.028 seconds

Microwave Dielectric Properties of CaTi0.5Fe0.25Nb0.25O3 Ceramics with CuO Addition

  • Kang, Kui-Won;Kim, Hyo-Tae;Hwang, Joon-Cheol;Nam, Joong-Hee;Yeo, Dong-Hun
    • Journal of the Korean Ceramic Society
    • /
    • v.41 no.8
    • /
    • pp.633-636
    • /
    • 2004
  • The sintering behavior, microstructure and microwave dielectric properties of Ca $Ti_{0.5}$F $e_{0.25}$N $b_{0.25}$ $O_3$ with CuO have been investigated. Among the range of additions, 3 wt% CuO was observed to perform most satisfactory for acting as a sintering aid. The dielectric properties were found to strongly depend on the sintered densities. The dielectric constant increased with sintering temperatures, while the Q${\times}$ $f_{0}$ value affected by second phase. For Ca $Ti_{0.5}$F $e_{0.25}$N $b_{0.25}$ $O_3$ with 3 wt% CuO sintered at 100$0^{\circ}C$ for 2 h, the dielectric properties with an $\varepsilon$$_{r}$ value of 56, a Q${\times}$ $f_{0}$ value of 3,500 GHz and a $\tau$$_{f}$ value of 10 ppm/$^{\circ}C$ were obtained and suggested for practical applications.cations.ons.ons.ons.

A Study on Microwave Dielectric Properties of Low-Temperature Sintered (Zn0.8Mg0.2)TiO3 Ceramics (저온소결 (Zn0.8Mg0.2)TiO3 세라믹의 마이크로파 유전특성에 관한 연구)

  • 방재철;심우성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.16 no.7
    • /
    • pp.604-610
    • /
    • 2003
  • The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

Effects of Fluoride Additions on Sintering and Microwave Dielectric Properties of $ZnWO_4$ (Fluoride 첨가가 $ZnWO_4$ 소결 및 고주파 유전특성에 미치는 영향)

  • Lee, Kyoung-Ho;Kim, Yong-Chul;Kim, Hong-Rae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.07b
    • /
    • pp.541-544
    • /
    • 2002
  • In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

  • PDF

Fabrication and Machinability of Mullite-ZrO2-Al2TiO5 Ceramics

  • Shin, Young Been;Lee, Won Jae;Kim, Il Soo
    • Journal of the Korean Ceramic Society
    • /
    • v.52 no.6
    • /
    • pp.423-428
    • /
    • 2015
  • The machinability of materials is an important factor in engineering applications. Many ceramic components that have complex shapes require machining, typically using diamond tools, which leads to high production cost. Machinable ceramics containing h-BN have recently been developed, but these materials are very expensive because of high cost of raw materials and machining. Therefore the development of low-cost machinable ceramics is desirable. In this study, mullite-$ZrO_2$ ceramics were prepared additions of $Al_2TiO_5$. $ZrSiO_4$, $Al_2O_3$, and $Al_2TiO_5$ powders mixed at various molar ratios with sintering at 1400, 1500, and $1600^{\circ}C$ for 1 hr. Phase formation and microstructure of the sintered ceramics were observed by XRD and SEM, respectively. The machinability of each specimen was tested using the micro-hole machining method. The machinability results show that the ceramics sintered at temperatures over $1500^{\circ}C$ can be used as good low-cost machinable mullite-$ZrO_2-Al_2TiO_5$ ceramics.

The effects of additions on the PTC characteristics of semiducting $BaTiO_3$ ceramics. ($BaTiO_3$계 Ceramic 반도체의 PTC 특성의 첨가물영향)

  • Han, Sung-Jin;Kim, Sang-Young;Kang, Hee-Bok;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
    • /
    • 1989.07a
    • /
    • pp.310-313
    • /
    • 1989
  • The semiconducting bodies were prepared by doping the bariume titanate with $Sb_2O_3,Nb_2O_5$and by subsequent sintering in air. The sintered bodies were annealed between $1100^{\circ}C$ and $1250^{\circ}C$ for 30 minutes to 2 hours in air. The resistivity was measured as a function of temperature from $20^{\circ}C$ to $240^{\circ}C$. The anomalous effect in resistivity occurred all of the $Nb_2O_5$ and $Sb_2O_3$doped barium titanate specimens, which were sintered in air atmosphere, and the most effective PTC effect occurred through 1 hour of sintering time at $1350^{\circ}C$ and 30 minute of annealing time at $1200^{\circ}C$. The resistivity - temperature characteristics seem to be intimately related to oxygen adsorption at grain boundaries and also to the thickness of insulating layers formed at grain boundaries during heat treatment.

  • PDF

A Study on Densification Behvior of Austenitic Stainless Steel Powder Compacts Processed by Warm Compaction (온간 성형법으로 제작한 오스테나이트계 스테인레스강의 소결 거동에 관한 연구)

  • 임태환
    • Journal of Powder Materials
    • /
    • v.7 no.1
    • /
    • pp.42-49
    • /
    • 2000
  • Densificationbehavior of conventional austenitic stainless steel powder compacts was studied by comparing the relative density of sintered compact(Ds)with that of green compacts(Dg)prepared with various catbon contents and P/M process. Dg of 304and 316 powders by warm compaction under pressure of 686 MPa at heating temperature of powder(553K) and dies (573K) were 80% and 81%, repectively, whichwere 2 and 3% higher than those of conventional green compacts at the same pressure. Ds of 304 compacts sintered at 1373K in H2 gas has the same value of 84% max. regardless of compacting temperature, and Ds of 316 compacts at the same sintering conditions were 80% by conventional compaction and 83% by warm compaction. Oxygen contents of 304 and 316 sintered compacts were increased 1.43∼2.94% and 0.010∼0.921% higher than those of raw powders and warm green compacts, respectively. In other case, Ds of 316 compacts sintered at 1573K in vacuum had the same value of 86%max. And Ds of 316 compacts at the same sintering conditions were 83% and 86% by conventional and warm compaction, respectively. Oxygen contents of 304 sintered compacts were 0.321% and 0.360%, and in case of 316, they were 0.419% and 0.182% by the respective compating condition. With carbon additions in the range 0.1∼0.6% Ds increased to the extent of 86∼89% in 304 sintered compacts, and to 82∼84% and 85∼87% in 316 according to different two compacting peocesses compared to those of sintered compacts without carbon addition.

  • PDF

Effects of Strontium Gallate Additions on Sintering Behavior and Electrical Conductivity of Ce0.8Gd0.2O2-δ Ceramics (Strontium Gallate의 첨가에 따른 Ce0.8Gd0.2O2-δ 세라믹스의 소결거동과 전기전도도 특성)

  • Park Jin-Hee;Choi Kwang-Hoon;Ryu Bong-Ki;Lee Joo-Sin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.19 no.2
    • /
    • pp.145-152
    • /
    • 2006
  • The densification behavior and electrical conductivity of $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics were investigated with the strontium gallate concentration ranging from 0 to $5\;mol\%$. Both the sintered density and grain size were found to increase rapidly up to $0.5\;mol\%$ $Sr_2Ga_2O_5$, and then to decrease with further addition. Dense $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics with $97\%$ of the theoretical density could be obtained for $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen sintered at $1250^{\circ}C$ for 5 h, whereas pure $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics needed to be sintered at $1550^{\circ}C$ in order to obtain an equivalent theoretical density, Electrical conductivity was measured as a function of dopant content, over the temperature range of $350\;-\;600^{\circ}C$ in air. Total conductivity of $0.5\;mol\%$ $Sr_2Ga_2O_5$-added specimen showed the maximum conductivity of $2.37{\times}10^{-2}{{\Omega}-1}{\cdot}cm^{-1}$ at $500^{\circ}C$, The addition of strontium gallate was found to promote the sintering properties and electrical conductivities of $Gd_2O_3$-doped $CeO_2$.

Sintering Behaviors of ITO Ceramics with Additions of TiO$_2$ (TiO$_2$첨가에 따른 ITO 세라믹스의 소결 거동)

  • 정성경;김봉철;장세홍;김정주
    • Journal of the Korean Ceramic Society
    • /
    • v.35 no.4
    • /
    • pp.347-354
    • /
    • 1998
  • Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.

  • PDF

Effect of silver oxide additions on YBCO thick film properties

  • Soh, Dea-Wha;Li, Ying-Mei;Cho, Yong-Joon;Korobova, N.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11b
    • /
    • pp.81-84
    • /
    • 2001
  • The effect of silver oxide (14 wt.%) addition to YBCO compounds and electrophoretic deposition of composite particles prepared by solid phase reaction have been investigated. The results were compared with those for as-processed samples with YBCO films on Ag wire substrate. Our experiments show that the adhesion, microstructure changes, superconducting properties of these films is sensitive to the silver content and sintering conditions. Adding a small amount of PEG tends to remove cracks in the YBCO and (YBCO + Ag) films, which develop during the heating process. An attempt has been made to explain the experimental observations regarding variation of critical current density with the YBCO and (YBCO + Ag) films.

  • PDF

Effect of silver oxide additions on YBCO thick film properties

  • Soh, Dea-Wha;Li, Ying-Mei;Cho,Yong-Joon;N., Korobova
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11a
    • /
    • pp.81-84
    • /
    • 2001
  • The effect of silver oxide (14 wt.%) addition to YBCO compounds and electrophoretic deposition of composite particles prepared by solid phase reaction have been investigated. The results were compared with those for as-processed samples with YBCO films on Ag wire substrate. Our experiments show that the adhesion, microstructure changes, superconducting properties of these films is sensitive to the silver content and sintering conditions. Adding a small amount of PEG tends to remove cracks in the YBCO and (YBCO + Ag) films, which develop during the heating process. An attempt has been made to explain the experimental observations regarding variation of critical current density with the YBCO and (YBCO + Ag) films.

  • PDF