• Title/Summary/Keyword: Sintered density

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Growth and photocurrent properties for ZnO Thin Film by Pulsed Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.74-75
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    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

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Sintering and Microwave Dielectric Properties of Bi18(Ca0.725Zn0.275)8Nb12O65 [BCZN] Dielectrics with V2O5 Addition (소결조제 V2O5 첨가에 따른 Bi18(Ca0.725Zn0.275)8Nb12O65 [BCZN] 유전체의 소결 및 마이크로파 유전특성)

  • Lee, Young-Jong;Kim, Sung-Soo
    • Journal of Powder Materials
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    • v.17 no.4
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    • pp.289-294
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    • 2010
  • For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

Effect of the SiC Size on the Thermal and Mechanical Properties of Reaction-bonded Silicon Carbide Ceramics (반응소결 탄화규소 세라믹스의 열물성과 기계적 특성에 미치는 SiC 크기의 영향)

  • Kwon, Chang-Sup;Oh, Yoon-Suk;Lee, Sung-Min;Han, Yoonsoo;Shin, Hyun-Ick;Kim, Youngseok;Kim, Seongwon
    • Journal of Powder Materials
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    • v.21 no.6
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    • pp.467-472
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    • 2014
  • RBSC (reaction-bonded silicon carbide) represents a family of composite ceramics processed by infiltrating with molten silicon into a skeleton of SiC particles and carbon in order to fabricate a fully dense body of silicon carbide. RBSC has been commercially used and widely studied for many years, because of its advantages, such as relatively low temperature for fabrication and easier to form components with near-net-shape and high relative density, compared with other sintering methods. In this study, RBSC was fabricated with different size of SiC in the raw material. Microstructure, thermal and mechanical properties were characterized with the reaction-sintered samples in order to examine the effect of SiC size on the thermal and mechanical properties of RBSC ceramics. Especially, phase volume fraction of each component phase, such as Si, SiC, and C, was evaluated by using an image analyzer. The relationship between microstructures and physical properties was also discussed.

Structural and Dielectric Properties of PLT Thin Plates (PLT 박편의 구조 및 유전특성)

  • Lee, Jae-Man;Park, Ki-Cheol
    • Journal of Sensor Science and Technology
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    • v.7 no.1
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    • pp.51-60
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    • 1998
  • La-modified $PbTiO_{3}$(PLT) thin plates were prepared for the fabrication of PLT pyroelectric IR sensors. The effects of the preparation parameters such as tile sintering temperature, the La content, and the ambient powder quantity, on the microstructural and dielectric properties of PLT thin plates were investigated by X-ray diffraction, scanning electron microscope, and measurements of relative density and dielectric properties. With an increased La content, the tetragonality c/a was decreased but the densification and the grain size were increased, which is considered to be due to the increased Pb vacancy concentration to maintain charge neutrality at the increased of La content. When the quantity of the ambient powder wvas increased, the tetragonality was slightly increased, which is believed io be due to the reduced evaporation of PbO. But the e(fect is insignificant compared to that of La content. The dielectric constant at room temperature was increased and the Curie temperature was decreased in accordance with the decreased tetragonality ratio c/a with the increase of La content. The dielectric constant and tan ${\delta}$ of $500{\mu}m$ thick PLT thin plate with 10 wt% excess PbO and 10 mol% La contant sintered at $1250^{\circ}C$ for 2 hours in ambient powder of $0.02\;g/cm^{3}$ were 360 and 0.02, respectively.

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Tribological Properties of Ceramic Composite Friction Materials Reinforced by Carbon Fibers (탄소섬유가 혼합된 세라믹 복합재 제동마찰재의 마찰·마모 특성)

  • Goo, Byeong-Choon;Kim, Min-Soo
    • Tribology and Lubricants
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    • v.33 no.1
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    • pp.15-22
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    • 2017
  • Because the running speed of vehicles is increasing and a shorter braking distance is required, high heat-resistant brake pads are needed to satisfy the requirements of customers and car makers. In the near future, hazardous materials such as Cu, Cr, Zn, and Sb will be restricted from use in friction materials. Ceramic composites reinforced by carbon fibers are good candidates for eco-friendly friction materials. In this study, we develop ceramic composite friction materials. The friction materials are composed of carbon fibers, Si, SiC, graphite, and phenol resin and are prepared by hot forming and heat treatment at high temperatures. The density, void ratio, and compressive strength are $1.59-1.66g/cm^3$, 16.6-20, and 70-90 MPa, respectively. Friction and wear tests are performed using a pin-on-plate-type reciprocating friction tester at 25, 100, and $200^{\circ}C$. The counterpart material is a CrMoV steel extracted from a KTX brake disc. Friction coefficient, wear amount, and wear mechanism are measured and examined. We determine that the friction coefficients depend on the temperature and the fluctuation of the friction coefficients is larger at higher temperatures. The amount of wear increases with the surface temperatures of the specimens. The tribological properties of the developed composites are similar to those of a Cu-based sintered friction material. Through this study, it is confirmed that ceramic composite materials can be used as friction materials.

Effect of Al Alloy Content on Processing of Reaction-Bonded Al2O3 Ceramics Using Al Alloy Powder

  • Lee, Hyun-Kwuon
    • Korean Journal of Materials Research
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    • v.25 no.5
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    • pp.215-220
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    • 2015
  • The effect of Al content on the processing of reaction-bonded $Al_2O_3$ (RBAO) ceramics using 40v/o ~ 80v/o Al-Zn-Mg alloy powder was studied in order to improve traditional RBAO ceramic processes that use ~ 40v/o pure Al powder. The influence of high Al content in starting $Al_2O_3$-Al alloy powder mixtures on its particulate characteristics, reaction-bonding, microstructure, physical and mechanical properties was revealed. Starting $Al_2O_3$-Al alloy powder mixtures with 40v/o ~ 80v/o Al alloy powder were milled, reaction-bonded, post-sintered, and characterized. With an increasing Al alloy content, the milling efficiency of Al alloy powder was lowered, resulting in a larger particle size after milling. However, in spite of the larger particle size of Al alloy powder, the oxidation, i.e., reaction-bonding, of the Al alloy was successfully completed via solid and liquid state oxidation, in which the activation energy of the oxidation was nearly the same regardless of Al alloy content. After reaction-bonding and post-sintering at $1600^{\circ}C$, RBAO ceramics from 80v/o Al alloy content showed a relative density of ~97% and a flexural strength of 251 MPa compared to ~ 96% and 353 MPa for RBAO ceramics from 40v/o Al alloy content, respectively. The lower flexural strength at 80v/o Al alloy content was due to the weak spinel phase that formed from Zn, Mg alloying elements in Al.

Preparation of Sintered ATZ by Sol-Gel Process and Properties (졸-겔법에 의한 알루미나 강화 지르코니아 소결체의 제조 및 특성)

  • Han, Kyoung Ran;Park, Sun Jin;Hong, Kug-Sun;Jun, Hyung Woo
    • Analytical Science and Technology
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    • v.6 no.2
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    • pp.225-229
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    • 1993
  • ATZ was prepared by adding an alumina sol equivalent to 2wt% as $Al_2O_3$ to an aqueous slurry of alumina (AKP-30) and zirconia (TZ-2Y or TZ-0Y) in the range of 10-30ATZ, followed by gelation, calcination, and sintereing between $1450^{\circ}C{\sim}1550^{\circ}C$ for 2h. They showed excellent microstructure with alumina grains of <$0.5{\mu}m$ and>99% of the theoretical density. Fracture toughness of ${\sim}8MPa{\cdot}m^{1/2}$ was observed around 20ATZ which was higher than $6MPa{\cdot}m^{1/2}$ obtainable by ball-milling.

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Growth of ZnO thin film by pulsed laser deposition and photocurrent study on the splitting of valance band (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.14 no.3
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    • pp.160-168
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    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

Effect of CuO-V2O5 Addition on Microwave Dielectric Properties of (Pb0.45Ca0.55(Fe0.5Nb0.5)0.9Sn0.1]O3 Ceramics

  • Ha, Jong-Yoon;Choi, Ji-Won;Yoon, Ki-Hyun;Choi, Doo-Jin;Yoon, Seok-Jin;Kim, Hyun-Jai
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.9-12
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    • 2004
  • The effect of x wt% CuO-y wt% $V_2O_5$ content on the microwave properties of $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ (PCFNS) ceramics was investigated. In order to decrease the sintering temperature and use as a Low Temperature co-firing Ceramics (LTCC), CuO-$V_2O_5$ are added in the PCFNS. The bulk density, dielectric constant (${\varepsilon}_r$) and quality factor(Q${\cdot}f_0$) increased with increase in CuO content within a limited value. The microwave properties were degraded with increases in $V_2O_5$ content. The temperature coefficient of the resonant frequency (${\tau}_f$) of PCFNS was shifted to positive value abruptly with increasing the $V_2O_5$ content, while the ${\tau}_f$ was slightly shifted to positive value with increasing the CuO content. The optimized microwave properties, ${\varepsilon}_r$ = 88, Q${\cdot}f_0$ = 6100 (GHz), and ${\tau}_f$ = 18 ppm/$^{\circ}C$, were obtained in $(Pb_{0.45}Ca_{0.55})[(Fe_{0.5}Nb_{0.5})_{0.9}Sn_{0.1}]O_3$ with 0.2wt% CuO 0.05 wt% $V_2O_5$ and sintered at $1000^{\circ}C$ for 3 h. The relationship between the microstructure and microwave dielectric properties of ceramics was studied by X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM)

Characterization of PMW-PZT Thick Films Prepared by Screen Printing Method (스크린 인쇄법에 의해 제조한 PMW-PZT 후막의 특성)

  • Son, Jin-Ho;Kim, Yong-Bum;Cheon, Chae-Il;Yoo, Kwang-Soo;Kim, Tae-Song
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.30-35
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    • 2004
  • PMW-PZT thick films of about $30{\mu}m$ thickness were fabricated on Pt/$TiO_2$/$SiN_x$Si substrate by the hybrid method of screen printing and PZT sol application. With the increase of the number of the sol application times, the sintered density and electrical properties of PMW-PZT thick films were evidently increased. For the PMW-PZT thick film with PZT sol application of 10-times, the dielectric constant ($\varepsilon_r$) was 745 at the frequency of 100 KHz and thepiezoelectric coefficient ($d_33$) was 155 pC/N at the applied pressure of 1 atm.