• 한국세라믹학회지
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• 제39권1호
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• pp.45-50
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• 2002

평균입경 25$\mu m$의 Si조대분말에 소결조제의 조성과 양을 변화시켜 질화반응 질화규소 (RBSN)세라믹스를 제조할 때 나타나는 치밀화 거동, 미세구조의 발달 및 기계적 특성에 대하여 고찰하였다. 6wt% $Y_2O_3$ + 1wt% $Al_2O_3$(6YlA)의 소결조제를 첨가한 경우에는 치밀화를 이루지 못하였으나, 6wt% $Y_2O_3+3\;wt%\;Al_2O_3+2\;wt%\;SiO_2(6Y3A2S)$와 9wt% $Y_2O_3$+1.5wt% $A1_2O_3$+ 3w% $SiO_2$(9Yl.5A3S)의 소결조제를 첨가하여 이론밀도에 가까운 치밀화를 이루었다. $1900^{\circ}C$에서 소결한 6Y3A2S시편의 경우, 960MPa의 높은 파괴강도값과 $6.5MPa.m^{1/2}$의 파괴인성값을 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.74-75
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 센서학회지
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• 제14권3호
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• 한국세라믹학회지
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• 제41권5호
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• pp.395-400
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• 2004

세라믹 사출성형시 결합체의 조성에 따른 혼합물의 유동학적 특성과 제조조건에 따른 시편의 결함 생성 및 탈지공정에 대하여 조사하였다. 2wt%의 stearic acid를 코팅한 세라믹 분말(65wt% $Al_{2}O_{3}$ㆍ35 wt% 장석)에 결합체로 15,20 및 25wt%의 Paraffin Wax (PW)와 High Density Polyethylene(HDPE)을 첨가하여 $160^{\circ}C$에서 2시간 혼합하였다. Capillary rheometer로 측정한 혼합물의 겉보기 점도는 shear rate가 $1000s_{-1}$일 때 80~300Pa.s로 사출성형에 적합한 유동성을 나타내었으며, 결합제의 조성에 의존하였다. 결합제의 조성이 15H5P5(총 15wt%의 결합체중, HDPE/PW 비=5:5)인 사출성형 시편은 사출압력과 관계없이 short shot가 생성되었으나, 사출압력이 45kgf/$cm^{2}$인 10H5P5 사출성형 시편은 결함이 관찰되지 않았다. 사출성형 시편 중의 pw를 $70^{\circ}C$의 n-heptane 용매에서 5시간동안 침지하여 제거한 후, $450^{\circ}C$에서 5시간 열처리하여 HDPE를 제거하였다. PW의 추출에 의해 형성된 연속기공을 통하여 HDPE의 효과적인 제거와 기계적 강도의 손상없이 사출성형이 가능한 결합체 조성은 20H5P5이었다. $1300^{\circ}C$에서 5시간 소결한 20H5P5 시편의 부피비중은 2.8, 기공률은 3% 이하 및 3점곡강도는 약 2,400kgf/$cm^{2}$으로 구조용 재료로서 사용이 가능하였다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 제3회 최신 분말제품 응용기술 Workshop
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• pp.25-37
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• 2002

The most important industrial application of gamma radiation in characterizing green compacts is the determination of the density. Examples are given where this method is applied in manufacturing technical components in powder metallurgy. The requirements imposed by modern quality management systems and operation by the workforce in industrial production are described. The accuracy of measurement achieved with this method is demonstrated and a comparison is given with other test methods to measure the density. The advantages and limitations of gamma ray densitometry are outlined. The gamma ray densitometer measures the attenuation of gamma radiation penetrating the test parts (Fig. 1). As the capability of compacts to absorb this type of radiation depends on their density, the attenuation of gamma radiation can serve as a measure of the density. The volume of the part being tested is defined by the size of the aperture screeniing out the radiation. It is a channel with the cross section of the aperture whose length is the height of the test part. The intensity of the radiation identified by the detector is the quantity used to determine the material density. Gamma ray densitometry can equally be performed on green compacts as well as on sintered components. Neither special preparation of test parts nor skilled personnel is required to perform the measurement; neither liquids nor other harmful substances are involved. When parts are exhibiting local density variations, which is normally the case in powder compaction, sectional densities can be determined in different parts of the sample without cutting it into pieces. The test is non-destructive, i.e. the parts can still be used after the measurement and do not have to be scrapped. The measurement is controlled by a special PC based software. All results are available for further processing by in-house quality documentation and supervision of measurements. Tool setting for multi-level components can be much improved by using this test method. When a densitometer is installed on the press shop floor, it can be operated by the tool setter himself. Then he can return to the press and immediately implement the corrections. Transfer of sample parts to the lab for density testing can be eliminated and results for the correction of tool settings are more readily available. This helps to reduce the time required for tool setting and clearly improves the productivity of powder presses. The range of materials where this method can be successfully applied covers almost the entire periodic system of the elements. It reaches from the light elements such as graphite via light metals (AI, Mg, Li, Ti) and their alloys, ceramics ($AI_20_3$, SiC, Si_3N_4, $Zr0_2$, ...), magnetic materials (hard and soft ferrites, AlNiCo, Nd-Fe-B, ...), metals including iron and alloy steels, Cu, Ni and Co based alloys to refractory and heavy metals (W, Mo, ...) as well as hardmetals. The gamma radiation required for the measurement is generated by radioactive sources which are produced by nuclear technology. These nuclear materials are safely encapsulated in stainless steel capsules so that no radioactive material can escape from the protective shielding container. The gamma ray densitometer is subject to the strict regulations for the use of radioactive materials. The radiation shield is so effective that there is no elevation of the natural radiation level outside the instrument. Personal dosimetry by the operating personnel is not required. Even in case of malfunction, loss of power and incorrect operation, the escape of gamma radiation from the instrument is positively prevented.

• Journal of Electrical Engineering and Technology
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• 제13권4호
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• 공업화학
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• 제3권3호
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• pp.527-534
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• 1992

Raney nickel 촉매를 이용하여 알칼리형 연료전지의 수소극을 제작하였다. $700^{\circ}C$에서 소결한 Raney nickel로 제작한 수소극의 경우 가장 좋은 전극성능을 갖는 $450mA/cm^2$의 전류밀도를 나타냈으며 이때의 평균촉매입자 크기는 $90{\AA}$이었다. CO-chemisorption 측정 및 분극곡선과 Tafel slope를 통하여 PTFE의 첨가량에 대한 전극의 전기화학적 성능을 고찰하였다. CO-chemisorption 측정 결과 5wt%의 PTFE가 첨가되었을 때 최고값을 갖는 것이 확인되었으나 전극에서의 전류밀도와 Tafel slope를 비교한 결과 10wt%의 PTFE를 첨가하는 경우가 가장 적당함을 알았다. Raney nickel제조시 nicke과 aluminum의 함량비는 60:40의 경우에 가장 좋은 전극 특성을 나타내었으며 담지량은 $0.25g/cm^2$의 경우가 적당하였다. 전극제조시 촉매층의 press압 및 촉매층과 기체확산층과의 접합시의 Press압에 대한 영향도 검토하였다. 또한 촉매의 표면 구조를 SEM으로 관찰하였으며 활성화시간 및 열처리 온도 등 여러가지 조건에 대한 전극의 영향도 고찰하였다.