• Title/Summary/Keyword: Single-to-Differential

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Differential Quadrature Analysis for Vibration of Wide-Flange Curved Beams (D.Q.M.을 이용한 I-단면 곡선보의 진동해석)

  • Ji-Won Han;Ki-Jun Kang
    • Journal of the Korean Society of Safety
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    • v.13 no.3
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    • pp.163-170
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    • 1998
  • The differential quadrature method (D.Q.M.) is applied to computation of eigenvalues of small-amplitude free vibration for horizontally curved beams including a warping contribution. Fundamental frequencies are calculated for a single-span, curved, wide-flange beam with both ends simply supported or clamped, or simply supported-clamped end conditions. The results are compared with existing exact solutions and numerical solutions by other methods for cases in which they are available. The differential quadrature method gives good accuracy even when only a limited number of grid points is used.

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Differential type Single-stage Isolated AC-DC Converter with AC Power Decoupling for EV Battery Charger

  • ;Kim, Hyeong-Jin;Kim, Jae-Hun;;Choe, Se-Wan
    • Proceedings of the KIPE Conference
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    • 2018.07a
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    • pp.198-200
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    • 2018
  • In this paper a single-stage single-phase differential type isolated AC-DC converter is proposed. This converter eliminates the requirement to use bulky electrolytic capacitor from the system and at the same time provides DC charging by employing the AC Power Decoupling waveform control method. All the switches of the converter achieve ZVS turn on during half line cycle and all diodes achieve ZCS turn off during entire line cycle. A conventional controller is implemented for PFC control and output regulation, whereas a power decoupling controller is added to compensate $2^{nd}$ harmonic ripple power. In addition, an interleaving technique is applied to increase the power range of the converter and reduce the input inductor size. In the end simulation verification is performed and results are obtained for 6.6KW.

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Characterization of eutectic reaction of Cr and Cr/CrN coated zircaloy accident tolerant fuel cladding

  • Dongju Kim;Martin Sevecek;Youho Lee
    • Nuclear Engineering and Technology
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    • v.55 no.10
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    • pp.3535-3542
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    • 2023
  • Eutectic reactions of five kinds of Cr-coated Zr alloy cladding with different base materials (Zr-Nb-Sn alloy or Zr-Nb alloy), different coating thicknesses (6~22.5 mm), and different coating materials (Cr single layer or Cr/CrN bilayer) were studied using Differential Scanning Calorimetry (DSC). The DSC experiments demonstrated that the onset temperatures of the Cr single layer coated specimens were almost identical to ~1308 ℃, regardless of base materials or coating thicknesses. This study demonstrated that the Cr/CrN bilayer coated Zr-Nb-Sn alloy has a slightly (~10 ℃) higher eutectic onset temperature compared to the single Cr-coated specimen. The eutectic region characterized by post-eutectic microstructure proportionally increases with coating thickness. The post-eutectic characterization with different holding times at high temperature (1310-1330 ℃) reveals that progression of Zr-Cr eutectic requires time, and it dramatically changed with exposure time and temperature. The practical value of the time gain in non-instantaneous eutectic formation in terms of safety margin, however, seems to be limited.

Transmission Performance Comparison of Direction Detection-Based 100-Gb/s Modulation Formats for Metro Area Optical Networks

  • Chung, Hwan Seok;Chang, Sun Hyok;Lee, Jonghyun;Kim, Kwangjoon
    • ETRI Journal
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    • v.34 no.6
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    • pp.800-806
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    • 2012
  • Transmission performances of direct detection-based 100-Gb/s modulation formats are investigated and compared for metro area optical networks. The effects of optical signal-to-noise ratio sensitivity, chromatic dispersion, cross-channel nonlinearity, and transmission distance on the performance of differential 8-ary phase-shift keying (D8PSK), differential phase-shift keying plus three-level amplitude-shift keying (DPSK+3ASK), and dual-carrier differential quaternary phase-shift keying (DC-DQPSK) are evaluated. The performance of coherent dual-polarization quadrature phase-shift keying (DP-QPSK) with block phase estimation and coherent DP-QPSK with digital differential detection are also presented for reference. According to our analysis, all three direct detection modulation formats could transmit a 100-Gb/s signal over several hundred kilometers of a single-mode fiber link. The results also show that DC-DQPSK outperforms D8PSK and DPSK+3ASK, and the performance of DC-DQPSK is comparable to that of coherent DP-QPSK with digital differential detection. The maximum transmission distance of DC-DQPSK is over 1,000 km, which is enough distance for metro applications.

Design of CMOS Dual-Modulus Prescaler and Differential Voltage-Controlled Oscillator for PLL Frequency Synthesizer (PLL 주파수 합성기를 위한 dual-modulus 프리스케일러와 차동 전압제어발진기 설계)

  • Kang Hyung-Won;Kim Do-Kyun;Choi Young-Wan
    • 한국정보통신설비학회:학술대회논문집
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    • 2006.08a
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    • pp.179-182
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    • 2006
  • This paper introduce a different-type voltage-controlled oscillator (VCO) for PLL frequency synthesizer, And also the architecture of a high speed low-power-consumption CMOS dual-modulus frequency divider is presented. It provides a new approach to high speed operation and low power consumption. The proposed circuits simulate in 0.35 um CMOS standard technology.

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MAXIMAL DOMAINS OF SOLUTIONS FOR ANALYTIC QUASILINEAR DIFFERENTIAL EQUATIONS OF FIRST ORDER

  • Han, Chong-Kyu;Kim, Taejung
    • Journal of the Korean Mathematical Society
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    • v.59 no.6
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    • pp.1171-1184
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    • 2022
  • We study the real-analytic continuation of local real-analytic solutions to the Cauchy problems of quasi-linear partial differential equations of first order for a scalar function. By making use of the first integrals of the characteristic vector field and the implicit function theorem we determine the maximal domain of the analytic extension of a local solution as a single-valued function. We present some examples including the scalar conservation laws that admit global first integrals so that our method is applicable.

Design of High Gain Differential Amplifier Using GaAs MESFET's (갈륨비소 MESFET를 이용한 고이득 차동 증폭기 설계)

  • 최병하;김학선;김은로;이형재
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.8
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    • pp.867-880
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    • 1992
  • In this paper, a circuit design techniques for Improving the voltage gain of the GaAs MESFET single amplifier is presented. Also, various types of existing current mirror and proposed current mirror of new configuration are compared. To obtain the high differential mode gain and low common mode gain, bootstrap gain enhancement technique Is used and common mode feedback Is employed In the design of differential amplifier. The simulation results show that designed differential amplifier has differential gain of 57.66dB, unity gain frequency of 23.25GHz. Also, differential amplifier using common mode feedback with alternative negative current mirror has CMRR of 83.S8dB, stew rate of 3500 V /\ulcorners.

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Elimination of Clock Jump Effects in Low-Quality Differential GPS Measurements

  • Kim, Hee-Sung;Lee, Hyung-Keun
    • Journal of Electrical Engineering and Technology
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    • v.7 no.4
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    • pp.626-635
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    • 2012
  • Most of single frequency GPS receivers utilize low-quality crystal oscillators. If a lowquality crystal oscillator is utilized as the time reference of a GPS receiver, the receiver's clock bias grows very fast due to its inherent low precision and poor stability. To prevent the clock bias becoming too large, large clock jumps are intentionally injected to the clock bias and the time offset for clock steering purpose. The abrupt changes in the clock bias and the time offset, if not properly considered, induce serious accuracy degradation in relative differential positioning. To prevent the accuracy degradation, this paper proposes an efficient and systematic method to eliminate the undesirable clock jump effects. Experiment results based on real measurements verify the effectiveness of the propose method.

On the Performance of Incremental Opportunistic Relaying with Differential Modulation over Rayleigh Fading Channels

  • Bao, Vo Nguyen Quoc;Kong, Hyung-Yun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.7A
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    • pp.731-742
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    • 2010
  • We propose an incremental relaying protocol in conjunction with opportunistic communication for differential modulation with an aim to make efficient use of the degrees of freedom of the channels by exploiting a imited feedback signal from the destination. In particular, whenever the direct link from the source to the destination is not favorable to decoding, the destination will request the help from the opportunistic relay (if any). The performance of the proposed system is derived in terms of average bit error probability and achievable spectral efficiency. The analytic results show that the system assisted by the opportunistic relaying can achieve full diversity at low SNR regime and exhibits a 30㏈ gain relative to direct transmission, assuming single-antenna terminals. We also determine the effect of power allocation on the bit error probability BEP) performance of our relaying scheme. We conclude with a discussion on the relationship between the given thresholds and channel resource savings. Monte-Carlo simulations are performed to verify the analysis.

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

  • Shin, Sunhae;Kang, In Man;Kim, Kyung Rok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.546-550
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    • 2013
  • We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.