• 한국정밀공학회지
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• 제13권3호
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• pp.70-79
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• 1996

In off-line process optimization, process parameters are controlled such that the process is robust against changes in equipment conditions and incoming materials. The off-line methods, however, are not effective when the changes are so large that process parameters need to be adjusted. On-line control can respond to such large changes, but process uniformity has not been controlled on-line due to the difficulties in modeling. This paper is aimed at developing a new on-line control methodology where the uniformity is controlled effectively. The process variability is categorized based on the physical considerations, and the process parameters are classi- fied considering their effects on the categorized process variabilities. On-line control is performed with the properly selected process parameters so that robustness may not be degraded. The developed methodology is applied to the single wafer plasma etching processes, which resulted in both higher within-a-wafer uniformity and compens- ation of the incoming material non-uniformity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.532-536
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• 2007

Carbon nanotube (CNT) properties, produced using a magnetic null discharge (MND) plasma production technology, were investigated. We firstly deposited the Fe layer 200 nm in thickness on Si substrate by the magnetic null discharge sputter method at the substrate temperature of $300도C$, and then prepared CNTs on the catalyst layer by using the magnetic null discharge (MND) based CVD method. CNTs were deposited in a gas mixture of CH4 and N2 at a total pressure of 1 Torr by the MND-CVD method. The substrate temperature and the RF power were $650^{\circ}C$ and 600W, respectively. The characterization data indicated that the proposed source could synthesize CNTs even under relatively severe conditions for the magnetic null discharge formation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• 한국결정성장학회지
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• 제6권2호
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• pp.229-237
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• 1996

액상의 미립자를 이용하여 저온 플라즈마 반응로 안에서 $YBa_{2}Cu_{3}O_{x}$ 초전도체상을 MgO 단결정 위에 in-situ 증착하였다. 금속화합물의 용해도, 분해온도와 용매의 증기압이 이공정 방법에서 중용한 인자로 나타났으며, 초전도체상의 증착실험 조건은 산소분압이 0.3에서 2.7 kPa, 증착온도가 $800^{\circ}C$에서 $940^{\circ}C$까지이었다. 초전도체상을 위한 최적의 증착조건은 CuO 상전이선에 근접하게 나타났다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.243-247
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• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.