• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.661-665
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence $(<200^{\circ}C)$ on electrical properties. The feasible application in $1{\sim}2GHz$ frequency from measured data $BV_{CEO}{\sim}10V,\;f_T{\sim}14GHz,\;{\beta}{\simeq}110,\;NF{\sim}1dB$ using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• Geomechanics and Engineering
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• 제15권2호
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• pp.783-791
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• 2018

In consideration of the mesoscopic structure of soil-rock mixtures in which the rock aggregates are wrapped by soil at normal temperatures, a two-layer embedded model of single-inclusion composite material was built to calculate the shear modulus of soil-rock mixtures. At a freezing temperature, an interface ice interlayer was placed between the soil and rock interface in the mesoscopic structure of the soil-rock mixtures. Considering that, a three-layer embedded model of double-inclusion composite materials and a multi-step multiphase micromechanics model were then built to calculate the shear modulus of the frozen soil-rock mixtures. Given the effect of pore structure of soil-rock mixtures at normal temperatures, its shear modulus was also calculated by using of the three-layer embedded model. Experimental comparison showed that compared with the two-layer embedded model, the effect predicted by the three-layer embedded model of the soil-rock mixtures was better. The shear modulus of the soil-rock mixtures gradually increased with the increase in rock regardless of temperature, and the increment rate of the shear modulus increased rapidly particularly when the rock content ranged from 50% to 70%. The shear modulus of the frozen soil-rock mixtures was nearly 3.7 times higher than that of the soil-rock mixtures at a normal temperature.

• 한국표면공학회지
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• 제41권1호
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• pp.1-5
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• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

• Journal of Magnetics
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• 제2권3호
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• 한국정보전자통신기술학회논문지
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• 제13권5호
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• pp.353-358
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• 2020

일반적인 나선형 인덕터의 경우에 비대칭 구조를 가짐에 따라 포트의 방향에 영향을 받게 된다. 본 논문에서는 단층이면서 대칭 구조를 가질 수 있는 나선형 인덕터를 제안하고 시뮬레이션 및 주파수 특성을 분석하였다. 일반적인 나선형 인덕터는 포트의 기준에 따라 주파수-인덕턴스 특성, 주파수-품질계수 특성, 자기공진주파수가 큰 차이를 보이는 반면에, 제안된 대칭 나선형 인덕터는 포트에 변함없이 2.7nH의 인덕턴스, 약 7.86의 품질계수, 약 14.1GHz의 자기공진주파수를 가진다. 이는 기존 일반적인 나선형 인덕터가 포트에 따라 큰 차이를 갖는 것과 비교하여 포트의 방향에 대한 영향이 적은 것을 확인할 수 있었다. 다만, 코일의 점유 면적에 비하여 상호 인덕턴스가 줄어들어 낮은 인덕턴스를 가지며, 인덕턴스 증가보다 코일의 저항이 더 증가하여 품질계수 또한 낮아짐을 확인할 수 있었다. 향후에는 2층 대칭 나선형 구조를 통하여 인덕턴스와 품질계수를 향상시킬 수 있을 것으로 기대된다.

• 대한환경공학회지
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• 제36권9호
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• pp.597-603
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• 2014

본 연구에서는 PC, PMMA, HDPE, PP를 소재로 한 방음패널의 두께와 구조적 특성, 소재가 차음성능에 미치는 영향을 알아보았다. 각 소재로 구성된 단일 패널의 음향투과손실을 비교한 결과, PC, PMMA, HDPE, PP 순으로 음향투과손실이 높게 나타났으며, 질량법칙에 따르는 결과임을 확인하였다. 단일패널의 두께에 따른 투과손실을 비교해보면, 4 mm 단일패널에 비해 8 mm 두께의 투과손실이 약 5~6 dB(A) 크게 측정되었다. 또한 두께가 2배가 됨에 따라 일치효과 주파수가 낮아져 4,000~5,000 Hz에서 투과손실이 감소하는 영역이 발생하였으며, 4 mm 단일패널보다 투과손실이 작았다. 두 개의 4 mm 패널 사이에 공기층을 두어 이중으로 구성한 실험체를 대상으로 한 투과손실 실험 결과, 300 Hz 이하의 주파수에서는 동일한 두께인 8 mm의 단일패널과 효과가 비슷하였으며, 2,000 Hz 이상의 고주파수 대역에서 8 mm 단일패널에 비해 효과가 매우 뛰어났다. 반면 공명(resonance) 주파수와 인접한 500~630 Hz 대역에서 투과손실이 낮아지는 것을 알 수 있었다.

• 열처리공학회지
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• 제13권5호
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• pp.324-329
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• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• Nuclear Engineering and Technology
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• 제38권6호
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• pp.561-574
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• 2006

This study presents the results of an economic analysis for a comparison of the single layer and double layer alternatives with respect to a HLW-repository. According to a cost analysis undertaken in the Korean case, the single layer option was the most economical alternative. The disposal unit cost was estimated to be 222 EUR/kgU. In order to estimate such a disposal cost, an estimation process was sought after the cost objects, cost drivers and economic indicators were taken into consideration. The disposal cost of spent fuel differs greatly from general product costs in the cost structure. Product costs consist of direct material costs and direct labor and manufacturing overhead costs, whereas the disposal cost is comprised of construction costs, operating costs and closure costs. In addition, the closure cost is required after a certain period of time elapses following the building of a repository.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.