• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.744-749
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• 2011

Recently, annual usage of energy is dramatically increasing because industrialization is going faster and more electricity is needed due to various electronic devices. This study focused on the performance characteristics of solar cell using the impedance technique. The experiment measured an impedance according to frequency's from 2 mHz until 1 MHz. It could know that the impedance was decreased according to the frequency increases in solar cell. The imaginary part was changed from capacitance component to inductance component.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.118-121
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• 1998

Diisopropylselenide (DIPSe) is employed for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe in order to eliminate premature gas phase reaction while maintaining negligible carbon incorporation and preserving relatively low growth temperature. In combination with dimethylzinc, single crystalline ZnSe layers were grown on GaAs at temperature around 450$^{\circ}C$. Secondary ion mass spectrometry showed a negligible carbon incorporation in ZnSe films grown from DIPSe even at high [Ⅵ]/[II] ratios, in contrast of a carbon concentration of 1021 cm-3 in ZnSe films grown from diallyselenide (DASe). Crystalline and interface quality are demonstrated by secondary electron microscopy, secondary ion mass spectroscopy and double crystal X-ray diffraction.

• Bulletin of the Korean Chemical Society
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• 제21권3호
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• pp.310-316
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• 2000

Molecular dynamics simulation studies for thermotropic liquid crystalline systems conposed of rodlike molecules with 6 Lennard-Jones interaction sites wre performed in NPT ensemble. Within the range of temperature studied, the system exhibited isotropic and smectic phase. For the characterization of the smectic phase, we examined the structure of the liquid crystalline phase via the radial distribution function, its longitudinal and transverse components to the director, and other orientational correlation function, its longitudinal and transverse components to the director, and other orientational correlation functions. In the smectic A phase, our results showed a large anisotropy in translational motion (i.e.,$D_⊥ >> D_∥$), and the decay of the collective orientational correlation function of rank two became slower than that of the single particle orientational correlation function of rank one. Comments on the spontaneous growth of orientational order directly from the isotropic phase are given.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Current Photovoltaic Research
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• 제4권3호
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• pp.124-129
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• 2016

Recently industry has voiced a need for optimally designing the production process of low-cost, high-quality ingots by improving productivity and reducing production costs with the Czochralski process. Crystalline defect control is important for the production of high-quality ingots. Also oxygen is one of the most important impurities that influence crystalline defects in single crystals. Oxygen is dissolved into the silicon melt from the silica crucible and incorporated into the crystalline a far larger amount than other additives or impurities. Then it is eluted during the cooling process, there by causing various defect. Excessive quantities of oxygen degrade the quality of silicone. However an appropriate amount of oxygen can be beneficial. because it eliminates metallic impurities within the silicone. Therefore, when growing crystals, an attempt should be made not to eliminate oxygen, but to uniformly maintain its concentration. Thus, the control of oxygen concentration is essential for crystalline growth. At present, the control of oxygen concentration is actively being studied based on the interdependence of various factors such as crystal rotation, crucible rotation, argon flow, pressure, magnet position and magnetic strength. However for methods using a magnetic field, the initial investment and operating costs of the equipment affect the wafer pricing. Hence in this study simulations were performed with the purpose of producing low-cost, high-quality ingots through the development of a process to optimize oxygen concentration without the use of magnets and through the following. a process appropriate to the defect-free range was determined by regulating the pulling rate of the crystals.

• 신재생에너지
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• 제9권2호
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• pp.30-39
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• 2013

Multi-crystalline silicon solar cells is not exist a specific crystal direction different from single crystalline silicon solar cells. In functional materials, therefore, isotropic wet etching of mc-Si solar cell is easy the acid solution rather than the alkaline solution. The reflectance of wet texturing process is about 25% and the reflectance of RIE texturing process is achieved less than 10%. In addition, wet texturing has many disadvantages as well as reflectance. So wet texturing process has been replaced by a RIE texturing process. In order to apply BIPV, RIE and wet textured multi-crystalline silicon solar cell modules was manufactured by different kind of EVA sheet. Moreover, in case of BIPV, the short circuit current characteristics according to the angle of incidence is more important, because the installation of BIPV is fixed location. In this study, we has measured SEM image and I-V curve of RIE and wet textured silicon solar cell and PV module. Also we has analyzed quantum efficiency characteristics of RIE and wet textured silicon solar cell for PV modules depending on incidence angle.

• 한국진공학회지
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• 제19권4호
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• pp.314-318
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• 2010

다결정 실리콘 웨이퍼 표면에 대면적 reactive ion etching (RIE) 장비로 표면 텍스쳐를 형성한 뒤 태양전지를 제작하였다. 웨이퍼 표면에 텍스쳐를 형성하는 것은 광학적 손실을 줄이기 위해 일반적으로 사용되는 방법으로 alkaline etching이 사용된다. 그러나 다결정 실리콘 태양전지의 경우 재료의 결정 방향에 따라 식각되는 alkaline etching은 텍스쳐링의 모양을 제어할 수 없어 효과적이지 못하다. 이와 달리 플라즈마 식각방법을 사용하면 표면 텍스쳐의 모양을 효과적으로 제어하여 조금 더 낮은 반사율을 얻을 수 있다. 하지만 텍스쳐 모양 조절로 얻은 낮은 반사율이 항상 높은 변환효율을 얻을 수 있는 것은 아니다. 본 연구에서는 대면적 RIE 공정 조건별로 얻은 태양전지 표면 텍스쳐의 모양에 따라 각각의 반사율과 양자효율 및 변환효율이 미치는 영향을 살펴보았다.

• 한국산업보건학회지
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• 제31권4호
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• pp.295-303
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• 2021

Objective: Paint manufacturing industry workers are exposed to various lung cancer carcinogenic substances including hexavalent chromium and crystalline silica. Studies have been conducted on lung cancer in Paint manufacturing industry workers and the concentration of hexavalent chromium in paint industry; however, the concentration of crystalline silica and hexavalent chromium and cases of lung cancer in a single Paint factory has never been reported in Korea. Methods: To determine whether the cancer was related to his work environment, we assessed the level of exposure to carcinogens during pouring and mixing talc and pigment. In addition, a mask fit test was performed for the worker. Results: Analysis of talc and silica bulk powder materials showed that crystalline silica (quartz) was 5% in talc and 100% in silica. The green and yellow pigments contained 87% and 92% of lead chromate, respectively. Our quantitative analysis of pigment powder samples showed that the hexavalent chromium contents quantified in the green and yellow pigment samples were 87% and 92%, respectively. In order to estimate his exposure level of hexavalent chromium, we measured a personal exposure level of hexavalent chromium for a worker in accordance with the National Institute for Occupational Safety and Health #7605 method. The results showed that the worker was exposed to the high level of hexavalent chromium (0.033 mg m-3). In addition, the talc powder also contained 5% quartz, and the worker's exposure level to respirable quartz exceeded OEL. As a result of the respiratory protection fit test for workers, the overall Fit Factor was '15' when wearing a second-grade mask and '25' when wearing a first-grade mask, significantly lower than the US Occupational Safety and Health Agency (OSHA) pass value of "100". Conclusion: Workers who pouring and mixing powder materials such as talc or colored pigments in paint manufacturing company may be exposed to high concentrations of carcinogenic substances. These findings indicate that it is necessary to local ventilation system inspection, safety and health education for employers and workers, and periodically monitoring and manage the working environment.

• 한국산학기술학회논문지
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• 제8권2호
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• pp.207-211
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• 2007

본 논문에서는 단결정$(Al_2O_3)$ 성장을 DC-Motor로 제어하여 양질의 결정을 얻도록 하는 자동 가스 조절용 DC-Motor의 운영 시스템과 실시간 모니터링 시스템을 연구 개발하였다. 인조 보석류나 예물시계의 유리와 고열 내화용 투명유리 등에 사용되는 단결정(單結晶:$Al_2O_3$) 제품은 대부분의 가열 소성제품처럼 결정 성장 중에 로(爐)내의 열 흐름에 의해 제품의 품질과 특성에 결정적인 영향을 받게 된다. 따라서 수소와 산소를 적절히 혼합하여 로(爐) 내에서 연소시킴으로 공정시간 동안 로(爐)의 온도를 최적의 상태로 유지시키는 것이 양질의 단결정$(Al_2O_3)$을 제조하는 핵심 요소가 된다. 본 연구에서 수행한 가스 조정용 전동 밸브는 기존의 수작업으로 수행하던 압력 밸브의 제어를 기기 작동 밸브의 압력을 샘플링 하여 변위 값들을 일련의 명령어로 변환한 후 컴퓨터의 제어 신호로 바꾸어 밸브를 조정하도록 함으로서 직경이 확대된 단결정의 제조를 가능하게 하였다.

• 한국재료학회지
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• 제8권7호
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• pp.591-595
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• 1998

이 연구에서는 HVPE법으로 두께가 350$\mu\textrm{m}$, 면적이 100$\textrm{mm}^2$인 크랙이 없는 freestanding GaN 단결정 기판을 제작하고, 그 특성을 조사하였다. 제작된 GaN 기판의 격자상수는 $c_{o}$ =5.18486$\AA$이었고, 이중 X-선 회절피크의 반치폭은 650 arcsec 이었다. 10K의 온도에서 측정한 PL 스펙트럼은 에너지 밴드 갭 부근에서 중성 도너와 중성 억셉터에 구속된 여기자 및 자유여기자의 소멸에 의한 발광과 결정 결함고 관계하는 깊은 준위에 의한 1.8eV 부근 발광으로 구성되었다. 또한 라만 E2(high)모드 주파수는 567cm-1로서 벌크 GaN 단결정의 값과 같았다. 한편, GaN 기판의 전기저항도형은 n형이었고, 전기 비저항은 0.02$\Omega$.cm이었으며, 캐리어 이동도와 농도는 각각 283$\textrm{cm}^2$/V.s와 1.1$\times$$10^{18}$$cm^{-3}$이었다.