• 제목/요약/키워드: Single photon

검색결과 373건 처리시간 0.021초

광자쌍의 뭉침현상이 단일계수에 미치는 영향 (Effect of two-photon spatial bunching on single photon detection rates)

  • 김헌오;신하림;박구동;김태수
    • 한국광학회지
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    • 제14권6호
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    • pp.573-577
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    • 2003
  • Hong-Ou-Handel 간섭계를 이용한 광자쌍의 4차 간섭실험에서 두 광자의 뭉침이 단일계수에 미치는 영향을 조사하였다. 검출기의 단일광자 시간 분해능보다 짧은 시간간격으로 두 광자가 검출기에 입사할 때 하나의 검출기에서 측정되는 단일계수가 현저하게 줄어드는 변화를 확인하였다.

단일광자 검출기 기술개발 동향 (Single Photon Detectors Technologies Development Trends for Quantum Information)

  • 이욱재;심재식;윤천주
    • 전자통신동향분석
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    • 제35권4호
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    • pp.21-33
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    • 2020
  • Single photon detector technologies have emerged as powerful tools in optical quantum information applications such as quantum communication, quantum information, and integrated quantum photonics. Owing to significant attempts in the previous decade at improving photon-counting detectors, several single photon detectors with high efficiency and low noise have been realized within the optical wavelength regime. In this paper, we provide an overview of current studies on single photon detectors operating at wavelengths from the ultraviolet to the infrared. In addition, we discuss applications of single photon detector technologies in quantum communication and integrated quantum photonics.

Remarks on Single-Frequency Two-Photon Absorption$^\dag$

  • Lee, Duck-Hwan
    • Bulletin of the Korean Chemical Society
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    • 제8권4호
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    • pp.338-340
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    • 1987
  • The single-frequency two-photon absorption tensor is carefully rederived and examined. It is pointed out that the conventionally used tensor, which has been formally deduced from the different-frequency two-photon absorption tensor, can give an incorrect absolute two-photon absorption rate. The identity forbidded selection rule and the polarization ratio expressions are also examined with the new tensor.

Fabrication Tolerance of InGaAsP/InP-Air-Aperture Micropillar Cavities as 1.55-㎛ Quantum Dot Single-Photon Sources

  • Huang, Shuai;Xie, Xiumin;Xu, Qiang;Zhao, Xinhua;Deng, Guangwei;Zhou, Qiang;Wang, You;Song, Hai-Zhi
    • Current Optics and Photonics
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    • 제4권6호
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    • pp.509-515
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    • 2020
  • A practical single photon source for fiber-based quantum information processing is still lacking. As a possible 1.55-㎛ quantum-dot single photon source, an InGaAsP/InP-air-aperture micropillar cavity is investigated in terms of fabrication tolerance. By properly modeling the processing uncertainty in layer thickness, layer diameter, surface roughness and the cavity shape distortion, the fabrication imperfection effects on the cavity quality are simulated using a finite-difference time-domain method. It turns out that, the cavity quality is not significantly changing with the processing precision, indicating the robustness against the imperfection of the fabrication processing. Under thickness error of ±2 nm, diameter uncertainty of ±2%, surface roughness of ±2.5 nm, and sidewall inclination of 0.5°, which are all readily available in current material and device fabrication techniques, the cavity quality remains good enough to form highly efficient and coherent 1.55-㎛ single photon sources. It is thus implied that a quantum dot contained InGaAsP/InP-air-aperture micropillar cavity is prospectively a practical candidate for single photon sources applied in a fiber-based quantum information network.

A brief review on the recent progress of superconducting nanowire single photon detectors

  • Chong, Yonuk
    • 한국초전도ㆍ저온공학회논문지
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    • 제19권4호
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    • pp.22-25
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    • 2017
  • Superconducting nanowire single photon detectors (SNSPD) have become the most competent photon-counting devices in wide range of wavelengths. Especially in the communication wavelength (infrared), SNSPD has shown unbeatable superior performance compared to the state-of-art semiconductor single photon detectors. The technology has matured enough for the last decade so that several commercial systems are now almost ready for routine use in general optics experiments. Here we summarize briefly the recent progress in this research field, and hope to motivate further research on the improvement of the device and the system. We cover the basic key concepts, device and system performances, remaining issues and possible further research directions of SNSPD.

색소 농도에 따른 형광 광자의 계수율 : 광자 검출기의 dead time 효과 (Fluorescence photon counting rate as a function of dye concentration: Effect of dead time of photon detector)

  • 고동섭
    • 한국광학회지
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    • 제8권4호
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    • pp.353-355
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    • 1997
  • 공초점 형광 현미경과 단일 광자 계수기로 구성되어 있는 단일 분자 검출장치를 사용하여, 색소 농도에 따른 광자 계수율의 변화를 관측하였다. 농도가 증가함에 따라 계수율이 포화하는 경향을 보였으며, 광검출기의 죽은 시간을 고려하여 측정 결과를 설명하였다. 계수율과 검출 부피, 광검출기의 양자효율, 입사 광량 사이의 관계를 나타내는 관계식을 제시하였다. 또한 신호대 잡음비에 대해서도 간략하게 논하였다.

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InAs/GaAs 양자점의 단전자-정공 재결합 연구 (Studies on single electron-hole recombination in InAs/GaAs Quantum dots)

  • 이주인;임재영;서정철
    • 한국진공학회지
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    • 제10권2호
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    • pp.257-261
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    • 2001
  • InGaAs/GaAs 초격자 구조들 사이에 InAs/GaAs 양자점을 MBE로 성장하고 광특성을 측정한 결과 매우 균일한 양자점을 얻을 수 있었다. Self-consistent한 이론 계산으로부터 얻은 p-i-n 구조의 최적 조건으로 단일광자구조를 성장하고 단일광자소자를 e-beam lithography를 이용하여 제작하였다. 전기적 특성인 I-V곡선에서 나타난 전기 이력현상으로부터 단일 전자와 단일 정공이 다른 전압에서 투과하여 단일 전자-정공 재결합 현상이 나타나고 있음을 확인하였다.

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Growth and Characterization of L-Histidine Tetrafluoroborate Single Crystals as a New Laser Damage Resistant Material

  • YOKOTANI, Atsushi;TAKEZOE, Noritaka;KUMURA, Satoshi;KONAGAYISHI, Susumu;KUROSAWA, Kou
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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    • pp.7-10
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    • 1998
  • L-Histidine tetrafluoroborate single crystals have been grown from the aqueous solution. The profitable pH value to grow large crystals, the relative flow rate to get clear crystals, crystals habit and the orientation of the obtained crystal have been clarified. We have also demonstrated that the LHBF crystal has very high damage threshold which is potentially good for generation of the phase conjugated waves.

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Two-Photon Absorption Cross Sections of Dithienothiophene-Based Molecules

  • Chung, Myung-Ae;Lee, Kwang-Sup;Jung, Sang-Don
    • ETRI Journal
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    • 제24권3호
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    • pp.221-225
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    • 2002
  • We performed nonlinear transmission measurements and quantum-chemical calculations on dithienothiophene(DTT)-based molecules to gain insight into the effect of acceptor and donor groups on two-photon absorption(TPA) properties. The TPA intensity showed dispersion characteristics of the single-photon absorption spectrum. When the molecules included an asymmetric donor-acceptor pair, the single- and two-photon absorption maximum wavelengths were red-shifted more than when the molecules had a symmetric donor-donor structure. We interpreted this result as indicating that the $S_2$ state plays the dominating role in the absorption process of molecules with a symmetric structure. The experimental TPA ${\delta}$ values at the absorption peak wavelength showed a dependence on the structural variations. We found the self-consistent force-field theory and Hartree-Fock Hamiltonian with single configuration interaction formalism to be valid for evaluating TPA ${\delta}$. Although the quantum-chemical calculations slightly underestimated the experimental ${\delta}$ values obtained from nonlinear trans -mission measurements, they reasonably predicted the dependence of the ${\delta}$ value on the structural variations. We confirmed the role of molecular symmetry by observing that donor-donor substituted structure gave the highest experimental and theoretical TPA ${\delta}$ values and that the donor-acceptor substituted structure showed a greater red-shift in the TPA absorption maximum wavelength. Overall, the theoretical ${\delta}$ values of DTT-based molecules were in the order of $10^{-46}\;cm^4{\cdot}s{\cdot}photon^{-1}$ and are higher than that of AF-50 by nearly two orders of magnitude.

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Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

  • Jinseok Oh;Hakcheon Jeong;Min Sun Lee;Inyong Kwon
    • Nuclear Engineering and Technology
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    • 제56권8호
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    • pp.3076-3083
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    • 2024
  • In this work, single photon avalanche diodes (SPADs) were fabricated using the standard 180 nm complementary metal-oxide semiconductor process. Their small size of 15-16 µ m and low operating voltage made it possible to easily integrate them with readout circuits for compact on-chip sensors, particularly those used in the radiation sensor network of a nuclear plant. Four architectures were proposed for the SPADs, with a shallow trench isolation (STI) guard ring and different depletion regions designed to demonstrate the main performance parameters in each experimental configuration. The wide absorption region structure with PSD and a deep N-well could achieve a uniform electric field, resulting in a stable dark count rate (DCR). Additionally, the STI guard ring was implanted to mitigate the premature edge breakdown. A breakdown voltage was achieved for a low operating voltage of 10.75 V. The DCR results showed 286.3 Hz per ㎛2 at an excess voltage of 0.04 V. A photon detection probability of 21.48% was obtained at 405 nm.