• Korean Journal of Optics and Photonics
• /
• v.14 no.6
• /
• pp.573-577
• /
• 2003

We report an effect of photon pairs on single-photon detection rates, while Hong-Ou-Handel's two-photon interference experiment is performed with photons produced in noncollinear type-I parametric down-conversion. Photon pairing behavior or spatial bunching is measured and shown to cause a decrease in the single photon counting rate. Such a dip is found to result from the fact that the single-photon timing resolution of photodetectors is much longer compared to the time interval between the two photons incident on the single-photon detector.

• Electronics and Telecommunications Trends
• /
• v.35 no.4
• /
• pp.21-33
• /
• 2020

Single photon detector technologies have emerged as powerful tools in optical quantum information applications such as quantum communication, quantum information, and integrated quantum photonics. Owing to significant attempts in the previous decade at improving photon-counting detectors, several single photon detectors with high efficiency and low noise have been realized within the optical wavelength regime. In this paper, we provide an overview of current studies on single photon detectors operating at wavelengths from the ultraviolet to the infrared. In addition, we discuss applications of single photon detector technologies in quantum communication and integrated quantum photonics.

• Bulletin of the Korean Chemical Society
• /
• v.8 no.4
• /
• pp.338-340
• /
• 1987

The single-frequency two-photon absorption tensor is carefully rederived and examined. It is pointed out that the conventionally used tensor, which has been formally deduced from the different-frequency two-photon absorption tensor, can give an incorrect absolute two-photon absorption rate. The identity forbidded selection rule and the polarization ratio expressions are also examined with the new tensor.

• Current Optics and Photonics
• /
• v.4 no.6
• /
• pp.509-515
• /
• 2020

A practical single photon source for fiber-based quantum information processing is still lacking. As a possible 1.55-㎛ quantum-dot single photon source, an InGaAsP/InP-air-aperture micropillar cavity is investigated in terms of fabrication tolerance. By properly modeling the processing uncertainty in layer thickness, layer diameter, surface roughness and the cavity shape distortion, the fabrication imperfection effects on the cavity quality are simulated using a finite-difference time-domain method. It turns out that, the cavity quality is not significantly changing with the processing precision, indicating the robustness against the imperfection of the fabrication processing. Under thickness error of ±2 nm, diameter uncertainty of ±2%, surface roughness of ±2.5 nm, and sidewall inclination of 0.5°, which are all readily available in current material and device fabrication techniques, the cavity quality remains good enough to form highly efficient and coherent 1.55-㎛ single photon sources. It is thus implied that a quantum dot contained InGaAsP/InP-air-aperture micropillar cavity is prospectively a practical candidate for single photon sources applied in a fiber-based quantum information network.

• Progress in Superconductivity and Cryogenics
• /
• v.19 no.4
• /
• pp.22-25
• /
• 2017

Superconducting nanowire single photon detectors (SNSPD) have become the most competent photon-counting devices in wide range of wavelengths. Especially in the communication wavelength (infrared), SNSPD has shown unbeatable superior performance compared to the state-of-art semiconductor single photon detectors. The technology has matured enough for the last decade so that several commercial systems are now almost ready for routine use in general optics experiments. Here we summarize briefly the recent progress in this research field, and hope to motivate further research on the improvement of the device and the system. We cover the basic key concepts, device and system performances, remaining issues and possible further research directions of SNSPD.

• Korean Journal of Optics and Photonics
• /
• v.8 no.4
• /
• pp.353-355
• /
• 1997

A single molecule detection system, which consists of confocal fluorescence microscope and single photon counter, has been used to observe the dye concentration dependence of photon counting rate. With increasing concentration, a saturation effect of counting is observed and demonstrated on the basis of the dead time of photon detector. The equations presented here show the relations between the counting rate and some parameters such as probe volume, quantum efficiency of detector, and fluorescence photon number entered onto detector. The signal-to-noise ratio is also discussed briefly.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.257-261
• /
• 2001

InAs/GaAs quantum dots between InGaAs/GaAs superlattices were grown by MBE. The quantum dots size is shown to be very uniform by measuring photoluminescence spectra of quantum dots. Single photon structures based on self-consistent calculation were grown and single photon devices were fabricated by e-beam lithography. The electrical hystereses of I-V curves for single Photon devices would result from single electron-hole recombination, where the resonant-tunneling voltages of electron and hole are different.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.06a
• /
• pp.7-10
• /
• 1998

L-Histidine tetrafluoroborate single crystals have been grown from the aqueous solution. The profitable pH value to grow large crystals, the relative flow rate to get clear crystals, crystals habit and the orientation of the obtained crystal have been clarified. We have also demonstrated that the LHBF crystal has very high damage threshold which is potentially good for generation of the phase conjugated waves.

• ETRI Journal
• /
• v.24 no.3
• /
• pp.221-225
• /
• 2002

We performed nonlinear transmission measurements and quantum-chemical calculations on dithienothiophene(DTT)-based molecules to gain insight into the effect of acceptor and donor groups on two-photon absorption(TPA) properties. The TPA intensity showed dispersion characteristics of the single-photon absorption spectrum. When the molecules included an asymmetric donor-acceptor pair, the single- and two-photon absorption maximum wavelengths were red-shifted more than when the molecules had a symmetric donor-donor structure. We interpreted this result as indicating that the $S_2$ state plays the dominating role in the absorption process of molecules with a symmetric structure. The experimental TPA ${\delta}$ values at the absorption peak wavelength showed a dependence on the structural variations. We found the self-consistent force-field theory and Hartree-Fock Hamiltonian with single configuration interaction formalism to be valid for evaluating TPA ${\delta}$. Although the quantum-chemical calculations slightly underestimated the experimental ${\delta}$ values obtained from nonlinear trans -mission measurements, they reasonably predicted the dependence of the ${\delta}$ value on the structural variations. We confirmed the role of molecular symmetry by observing that donor-donor substituted structure gave the highest experimental and theoretical TPA ${\delta}$ values and that the donor-acceptor substituted structure showed a greater red-shift in the TPA absorption maximum wavelength. Overall, the theoretical ${\delta}$ values of DTT-based molecules were in the order of $10^{-46}\;cm^4{\cdot}s{\cdot}photon^{-1}$ and are higher than that of AF-50 by nearly two orders of magnitude.

• Nuclear Engineering and Technology
• /
• v.56 no.8
• /
• pp.3076-3083
• /
• 2024

In this work, single photon avalanche diodes (SPADs) were fabricated using the standard 180 nm complementary metal-oxide semiconductor process. Their small size of 15-16 µ m and low operating voltage made it possible to easily integrate them with readout circuits for compact on-chip sensors, particularly those used in the radiation sensor network of a nuclear plant. Four architectures were proposed for the SPADs, with a shallow trench isolation (STI) guard ring and different depletion regions designed to demonstrate the main performance parameters in each experimental configuration. The wide absorption region structure with PSD and a deep N-well could achieve a uniform electric field, resulting in a stable dark count rate (DCR). Additionally, the STI guard ring was implanted to mitigate the premature edge breakdown. A breakdown voltage was achieved for a low operating voltage of 10.75 V. The DCR results showed 286.3 Hz per ㎛² at an excess voltage of 0.04 V. A photon detection probability of 21.48% was obtained at 405 nm.