• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.661-665
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence $(<200^{\circ}C)$ on electrical properties. The feasible application in $1{\sim}2GHz$ frequency from measured data $BV_{CEO}{\sim}10V,\;f_T{\sim}14GHz,\;{\beta}{\simeq}110,\;NF{\sim}1dB$ using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• Geomechanics and Engineering
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• v.15 no.2
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• pp.783-791
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• 2018

In consideration of the mesoscopic structure of soil-rock mixtures in which the rock aggregates are wrapped by soil at normal temperatures, a two-layer embedded model of single-inclusion composite material was built to calculate the shear modulus of soil-rock mixtures. At a freezing temperature, an interface ice interlayer was placed between the soil and rock interface in the mesoscopic structure of the soil-rock mixtures. Considering that, a three-layer embedded model of double-inclusion composite materials and a multi-step multiphase micromechanics model were then built to calculate the shear modulus of the frozen soil-rock mixtures. Given the effect of pore structure of soil-rock mixtures at normal temperatures, its shear modulus was also calculated by using of the three-layer embedded model. Experimental comparison showed that compared with the two-layer embedded model, the effect predicted by the three-layer embedded model of the soil-rock mixtures was better. The shear modulus of the soil-rock mixtures gradually increased with the increase in rock regardless of temperature, and the increment rate of the shear modulus increased rapidly particularly when the rock content ranged from 50% to 70%. The shear modulus of the frozen soil-rock mixtures was nearly 3.7 times higher than that of the soil-rock mixtures at a normal temperature.

• Journal of the Korean institute of surface engineering
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• v.41 no.1
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• pp.1-5
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• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.

• Journal of Magnetics
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• v.2 no.3
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.5
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• pp.353-358
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• 2020

In the case of a general spiral inductor, the orientation of the port is affected as it has an asymmetric structure. In this paper, a single-layered spiral inductor that can have a symmetrical structure is proposed, and the simulation and frequency characteristics are analyzed. The general spiral inductor shows a large difference in frequency-inductance characteristics, frequency-quality factor characteristics, and self-resonant frequency according to the standard of the port, while the proposed symmetric spiral inductor has an inductance of 2.7nH, a quality factor of about 7.86, and a self-resonant frequency of about 14.1GHz without changing the port. Compared to the general spiral inductor having a large difference depending on the port, it was confirmed that the influence on the port direction was small. However, it was confirmed that the mutual inductance decreased compared to the occupied area of the coil, resulting in a low inductance, and the resistance of the coil increased more than the increase in the inductance, and the quality factor was also lowered. In the future, it is expected that inductance and quality factor can be improved through a 2-layer symmetrical spiral structure.

• Journal of Korean Society of Environmental Engineers
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• v.36 no.9
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• pp.597-603
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• 2014

The aim of the present study is to compare sound performance depending on thickness, materials, and structure of polymer soundproof panels consisting of PC, PMMA, HDPE, and PP, respectively. As a result of comparing sound transmission loss (STL) of single layer panel made of four types of polymer, the better sound transmission loss was obtained in order of PC, PMMA, HDPE, and PP, which was obviously followed mass law. 8 mm of single panel showed 5~6 dB(A) greater STL than that of 4 mm panels and lower frequency for coincidence effect so that STL of 8 mm panels decreased around 4,000~5,000 Hz, indicating less STL of 4 mm panels than those of 8 mm. When it comes to structure, 4 mm panels with air layer appeared similar value of STL with 8 mm single panels under 300 Hz. In range of high frequency above 2,000 Hz, 4 mm panels with air layer performed better than 8 mm of single layer panel while resonance effects were observed at 500~630 Hz. It was found that these results could be practically utilized as fundamental data for noise barriers design considering the change to each condition.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.324-329
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• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.224-229
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• 1996

Performance characteristics of single cell in phosphoric acid fuel cell were studied for various electrode fabrication parameters such as teflon content, electrode structure, thickness of electrocatalyst layer, platinum content and electrode area. The performance of single cell was decided from the measured voltage-current through a load change. The electrode of 40wt.% teflon exhibited high initial performance of single cell, but in the long term operation, the cell performance of 45 wt.% teflon was better. Also the single cell appeared good performance in case of electrodes with duplicate structure, thin electrocatalyst in thickness, more platinum content, and small area. These results of cell performance were discussed as related to the electrolyte flooding, formation of 3 phase boundary area, internal resistance of electrode, and microstructure of electrode.

• Nuclear Engineering and Technology
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• v.38 no.6
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• pp.561-574
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• 2006

This study presents the results of an economic analysis for a comparison of the single layer and double layer alternatives with respect to a HLW-repository. According to a cost analysis undertaken in the Korean case, the single layer option was the most economical alternative. The disposal unit cost was estimated to be 222 EUR/kgU. In order to estimate such a disposal cost, an estimation process was sought after the cost objects, cost drivers and economic indicators were taken into consideration. The disposal cost of spent fuel differs greatly from general product costs in the cost structure. Product costs consist of direct material costs and direct labor and manufacturing overhead costs, whereas the disposal cost is comprised of construction costs, operating costs and closure costs. In addition, the closure cost is required after a certain period of time elapses following the building of a repository.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.