• Progress in Superconductivity
• /
• 제1권1호
• /
• pp.14-19
• /
• 1999

Measurements across single grain boundaries in YBCO thin films and bulk bicrystals have been used to demonstrate the influence of grain boundary structure on the critical current carried across the grain boundary. In particular, we show that one role of grain boundary structure is to change the degree of pinning along the boundary, thereby influencing the critical current. This effect can be used to explain the large difference in critical current density across grain boundaries in thin films compared to that for bulk bicrystal. These differences illustrate the distinction between the intrinsic mechanism of coupling across the grain boundary that determines the maximum possible critical current across a boundary and the measured critical current which is limited by dissipation due to the motion of vortices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.784-789
• /
• 2004

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 2004년도 학술대회지
• /
• pp.215-220
• /
• 2004

Molecular Dynamics(MD) method was used to investigate the change of friction force due to interaction between dislocations and a grain boundary when a Ni tip was scratched on a Cu bicrystal. The substrate comprised a Cu bicrystal containing a vertical$\Sigma=5(210)$ grain boundary. The moving tip for scratching simulation was consisted of fixed Ni atoms emulating a rigid tip. The indentation depth was $3.6\AA$ and the scratching was performed along <110>direction in the first grain. As the scratching was continued, nucleation and propagation of dislocations were observed. In the early stage, the grain boundary played as a barrier to moving dislocations and interrupting further dislocation movement with no dislocation resulting in no propagation across the grain boundary. As the Ni tip approached the grain boundary, dislocations were nucleated at the grain boundary and propagated to the second grain. However, stick-slip phenomena that were observed on a single crystal scratching were not observed in the bicrystal. And, instead, irregular oscillation of friction force was observed during the scratching due to the presence of a grain boundary.

• 한국전산구조공학회:학술대회논문집
• /
• 한국전산구조공학회 2009년도 정기 학술대회
• /
• pp.38-41
• /
• 2009

Debonding behavior of symmetric tilt bicrystal interfaces with <100> misorientation axis is investigated through molecular dynamics simulations. FCC single crystal copper is considered in each grain and the model is idealized as a grain boundary under mechanical loading. Embedded-Atom Method potential is chosen to calculate the interatomic forces between atoms. Constrained tensile deformations are applied to a variety of misorientation angles in order to estimate the effect of grain boundary angle on local peak stress. A new parameter of symmetric grain-boundary structure is introduced and refines the correlation between grain boundary angle and local peak stress.

• Journal of Welding and Joining
• /
• 제19권3호
• /
• pp.325-333
• /
• 2001

The effect of base metal grain size on isothermal solidification behavior of Ni-base superalloy, CMSX-2 during transient liquid phase (TLP) bonding was investigated employing MBF-80 insert metal. TLP-bonding of single crystal. coarse-grained and fine-grained CMSX-2 was carried out at 1373∼1548k for various holding time in vacuum. The eutectic width diminished linearly with the square root of holding time during isothermal solidification process for single crystal, coarse-grained and fine-grained base metals. The completion time for isothermal solidification decreased in the order ; single crystal, coarse-grained and fine-grained base metals. The difference of isothermal solidification rates produced when bonding the different base metals could be explained quantitatively by the effect of base metal grain boundaries on the apparent average diffusion coefficient of boron in CMSX-2.

• 한국세라믹학회지
• /
• 제54권5호
• /
• pp.413-421
• /
• 2017

In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

• 한국세라믹학회지
• /
• 제36권12호
• /
• pp.1316-1321
• /
• 1999

• 대한화학회지
• /
• 제21권5호
• /
• pp.339-352
• /
• 1977

소성변형에 대한 저자들의 이론(제1보)을 요업재료, 금속, 합금 및 단결정들에 적용하였다. 그 결과 다중 결정에서는 dislocation 운동과 grain boundary 운동이 실험조건에 따라 함께 또는 분리되어 나타나는 반면 단결정에서는 dislocation 운동만 나타났다. 유동식에 나타나는 파라미터$({\alpha}_{d1},\;1/{\beta}_{d1})와\;({\alpha}_{gj}/X_{gj},\;1/{\beta}_{gj})$ (j = 1 or 2) 및 활성화엔탈피 ${\Delta}H_{k1}^{\neq}$ (k = d 혹은 g)를 구하여 예측한 소성변형은 실험과 잘 일치함을 보았다. 여기서 첨자 d1는 첫번째의 dislocation 유동단위, gj는 j번째 grain boundary 유동단위를 나타낸다. 활성화엔탈피에 대하여 ${\Delta}H_{d1}^{\neq}$는 bulk의 자체확산에 대한 활성화엔탈피와 일치하고 ${\Delta}H_{g1}^{\neq}$는 grain boundary 자체확산에 대한 활성화엔탈피와 일치하였다. 이 사실은 저자들의 이론의 정당성을 보이고 있다.

• 한국초전도ㆍ저온공학회논문지
• /
• 제20권3호
• /
• pp.5-10
• /
• 2018

This study presents that various grain boundary junctions are prepared by controlling the seed orientation combined with an artificial hole in a melt process REBCO bulk superconductor. Large grain YBCO superconductors have been fabricated with various grain boundary junctions that the angle between the grain boundary and the <001> axis of Y123 crystal is $0^{\circ}$, $30^{\circ}$ and $45^{\circ}$, respectively. The presence of the artificial hole is beneficial for the formation of clean grain boundary junction and single peak trapped magnetic field profiles have been obtained. Artificial hole makes two growth fronts meet at a point on a periphery of the artificial hole. The presence of artificial hole is not likely to affect on the distribution of Y211 particles. The newly formed <110> facet lines are explained by the formation of new Y123/liquid interface with (010) crystallographic plane.

• 한국전자통신학회논문지
• /
• 제9권3호
• /
• pp.273-278
• /
• 2014

다결정 및 단결정 Cu 시편에 CVD를 이용하여 그래핀을 합성 하였으며, 광학현미경 조직사진을 이미지 조절 및 분석 가능한 소프트웨어를 활용하여 광학현미경 조직사진 상에서는 구분이 어려운 그래핀 합성에 따른 미세한 특성들을 이미지 분석을 통하여 구현하였다. 그래핀이 Cu 시편의 결정입계에서 핵 생성하여 Cu 입내로 성장하는 거동을 보이고, 그래핀 성장 시 그래핀 입계의 이동이 Cu 입계 및 기공과 상호작용하는 현상들에 대하여 설명하고, 결과적으로 야기되는 문제들의 원인과 결과를 논하였다.