• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.380-387
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• 1998

In this paper, a sensor material with Fe/Zr multilayer thin film, in which the change in the magnetization and strain with hydrogenation is maximized, were developed. Compositionally modulated (CM) Fe/Zr multilayers with a $Fe_{80}Zr_{20}$ composition and modulation wavelengths ($\lambda$) $3~50{\AA}$ were deposited by sequentially sputtering (RF diode) elemental Fe and Zr targets. The films were electrolytically hydrogenated to select the optimum Fe/Zr multilayers that show the maximum increases in the magnetization and strain with hydrogenation. The changes in the magnetic properties of the thin films after hydrogenation, were measured using a hysteresis graph and a vibrating sample magnetometer (VSM), and the strains induced in the films by hydrogenation were also measured using a laser heterodyne interferometer (LHI). The optimum sensor material selected was incorporated in a fiber-optic hydrogen sensor (that can sense indirectly amount of hydrogen injected) by depositing it directly on the sensing arm of a single-mode fiber Michelson interferometer. The developed sensor holds significant promise for non-destructive test evaluation (NDE) applications because it is expected to be useful for detecting easily and accurately the subsurface corrosion in structural systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.115-121
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• 2012

Sapphire single crystals have been highlighted for epitaxial gallium nitride films in high-power laser and light emitting diode (LED) industries. Among the many crystal growth methods, the Kyropoulos process is an excellent commercial method for growing larger, high-optical-quality sapphire crystals with fewer defects. Because the properties and growth behavior of sapphire crystals are influenced largely by the temperature distribution and convection of molten sapphire during the manufacturing process, accurate predictions of the thermal fields and melt flow behavior are essential to design and optimize the Kyropoulos crystal growth process. In this study, computational fluid dynamic simulations were performed to examine the effects of the crucible geometry aspect ratio on melt convection during Kyropoulos sapphire crystal growth. The results through the evolution of various growth parameters on the temperature and velocity fields and convexity of the crystallization interface based on finite volume element simulations show that lower aspect ratio of the crucible geometry can be helpful for the quality of sapphire single crystal.

• Korean Journal of Optics and Photonics
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• v.16 no.1
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• pp.13-20
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• 2005

Fiber-Bragg-grating external cavity laser(FGL) modules were fabricated and experimentally analyzed. Proposed as a cost-effective solution for optical sources in the WDM-PON access network, FGL modules were packaged to TO-CAN type. We obtained a low threshold current of 13 mA, and an optical output power of 3.6 mW with a bias current of 60 mA at $25^{\circ}C$. The lasing wavelength dependencies on current and temperature were as small as 5.2 pm/mA and 30 pm/$^{\circ}C$, respectively. These change rates of the wavelength with the temperature and current are smaller than those of the DFB laser. Single-mode oscillations with the side-mode suppression ratio(SMSR) over 30 dB are maintained above the threshold current level. The FGL modules can be directly modulated at 155 Mbps, PRBS(2$^{23}$ -1) NRZ signal. Through the BER plots, we did not see the significant degradations before and after the transmission over 20km of the SMF at 155 Mb/s.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.231-238
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• 2015

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.9
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• pp.103-109
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• 2006

This research is contents about output characteristic of optic current sensor that use faraday effect. optic current sensor used in an experiment is consisted of three parts.(1) Source of light used laser diode of 1310[nm].(2) Sensor section manufactured circularly according to gas insulated switchgear. And $9/125[{\mu}m]$ standard single mode optical fiber for communication was installed winding 20 [turn] on sensor section core surroundings of diameter 31 [cm].(3) Electrical signal of PD(Photo detector) is collected using NI company's 16bit DAQ board via terminal block. Collected data analyzed by different three signal processing methods. NI company's $Labview^{TM}$ was used to signal processing software. As a result, In signal processing of optic current sensor, we could know that noise greatly more influences the error generation than fluctuation of light intensity. also, 1 class CT(current transformer) manufacture that have error rate less than 1[%] was available by removing these

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.53-56
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• 2012

We have developed a slab-type Nd:YAG gain module based on the techniques of conduction cooling and end pumping. The Nd:YAG slab is end-capped on both ends by undoped pure YAG and is pumped through the end-caps by stacked arrays of laser diode bars. The slab's surfaces of total internal reflection are in contact on both sides with microchannel cooling blocks which are cooled by water circulation. The power oscillator based on the gain module generates more than 400 W at 1-kW pumping with a slope efficiency of 55%. The small-signal gain of the gain module is 10 in a single zig-zag pass, and the amplified beam shows a near diffraction-limited beam quality.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.96-97
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• 2000

Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.4-11
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• 2005

In this paper, we propose novel optics design for media inside near-field recording (NFR) using hemispherical solid immersion lens (HMS). To obtain strong advantage of data protection and high data capacity simultaneously, HMS based near field optics using aplanatic position of super hemisphere is designed. In this design, to improve small optical tolerance of this aplanatic position, additional aspheric lens surface is added on top of the HMS and it is combined with zoom optics which composed of two single lenses having low numerical aperture (NA). Also, to compensate chromatic aberration which happens seriously in optics using blue laser diode, diffractive optical element is used. Using zoom optics, additional aspheric lens surface, and diffractive optical element together, wavefront aberration and chromatic aberration are effectively reduced in broad range of cover layer thickness and wavelength variation. In addition, In this paper, effect of gap induced aberration is investigated by analyzing different behavior of each TM and TE wave for designed media inside dual-layer NFR optics.

• Particle and aerosol research
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• v.13 no.4
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• pp.159-164
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• 2017

The detection efficiency and characteristics of an optical particle counter (OPC), with various sample nozzle outlet diameters, were experimentally investigated. The OPC system, which was built with original design, was made up of a diode laser, two photodetectors, and a variety of optics such as a beam splitter and a concave mirror. The cone-shaped sampling nozzle was designed to be changeable to alter the outlet diameter, within the range of 1 to 3 mm. For samples, sets of polystyrene latex (PSL) standard particle with various sizes of 1 to $3{\mu}m$, were used. As a result, detection efficiency of the OPC greatly decreased with larger nozzle outlet diameter. Moreover, increased nozzle outlet diameter means broader sample flow, thus caused light interference and multiple scattering which results in abnormal high peaks in scattered light signal. The ratio of abnormal peaks to regular signal of single particle increased with larger nozzle outlet diameter.