• 제목/요약/키워드: Single crystals

검색결과 975건 처리시간 0.024초

Electromagnetic Wave Absorption Characteristics of Y-type Barium Ferrite Prepared by the Glass-ceramic Method

  • Miki, Hiroki;Hori, Chinatsu;Nagae, Masahiro;Yoshio, Tetsuo
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.1179-1180
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    • 2006
  • Y-type barium ferrite ($Ba_2Me_2Fe_{12}O_{22};$ Me=Zn, Co, Cu) expected as an electromagnetic wave absorber were prepared by the glass-ceramic method. The glasses with composition of $0.1ZnO{\cdot}0.9(xB_2O_3{\cdot}yBaO{\cdot}(1-x-y)Fe_2O_3)$ were prepared. Single-phase powders of Y type barium ferrite were obtained with the composition $0.1ZnO{\cdot}0.9(0.2B_2O_3{\cdot}0.5BaO{\cdot}0.3Fe_2O_3)$. The shape of Y-type crystals depended strongly on the heating temperature and changed from a plate-like hexagon to a complex polyhedron with increasing heating temperature. Correlation was recognized between saturation magnetization and crystal shape. Electromagnetic wave absorption characteristics was affected by the saturation magnetization and crystal shape.

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ZnO 나노와이어를 이용한 FET 소자 제작 및 특성 평가 (Fabrication and Characterization of FET Device Using ZnO Nanowires)

  • 김경원;오원석;장건익;박동원;이정오;김범수
    • 한국표면공학회지
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    • 제41권1호
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    • pp.12-15
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    • 2008
  • The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage.

소형 슬러시 제조기 증발기에서 슬러시 형성시 전열 특성 (Heat Transfer Characteristics During Slush Formation in the Evaporator of a Small Slush Maker)

  • 최용민;김도영;김내현;이을종;김수환;변호원
    • 설비공학논문집
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    • 제21권11호
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    • pp.643-648
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    • 2009
  • Tests were conducted to obtain heat transfer coefficients during slush formation from 10% sucrose solution. The slush was made by scraping the ice formed on the cylinder. Cold brine was supplied inside of the evaporator cylinder to cool the outer surface. Below a certain brine temperature, which was $-5^{\circ}C$ in this study, the solution was supercooled, and suddenly turned into ice crystals. During slush formation, the heat transfer coefficient oscillated significantly, due to periodic removal of ice chunk form the surface. The average heat transfer coefficient during slush formation was 40~70% higher than that obtained during single phase cooling. The heat transfer coefficient was also affected by the brine temperature with increasing heat transfer coefficient at higher brine temperature.

Lamp ZMR에 의한 SOI에서 비대칭 선형가열의 효과 (Effect of Asymmetric Line Heating in SOI Lamp ZMR)

  • 반효동;이시우;임인곤;주승기
    • 한국결정성장학회지
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    • 제2권2호
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    • pp.53-62
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    • 1992
  • SOI구조 형성을 위항 대용융 재결정(ZMR) 공정에서 타원형의 반사경을 기울여 빔강도분포를 인위적으로 변화시켜 실리콘 박막을 재결정시켰다. 비대칭 선형가열 효과를 해석하기 위하여 전산모사를 행하여 응고계면 근처에서의 온도분포와 열구배 변화를 조사하였다. 상부집속열원의 경사각이 증가할수록 액상의 과냉도와 실리콘 박막내의 결함열 간격은 증가하였다. 주된 결함은 연속적인 아결정립계였고 결함밀도가 낮은 경우는 isolated threading dislocations만이 관찰되었다. 단면 TEM과 박막 XRD 분석결과 실리콘 박막은 (100) 집합조직을 갖는 단결정 박막으로 재결정되었음을 확인할 수 있었다.

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CMP (Chemical Mechanical Polishing) characteristics of langasite single crystals for SAW filter applications

  • Jang, Min-Chul;An, Jin-Ho;Kim, Jong-Cheol;Auh, Keun-Ho
    • 한국결정성장학회지
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    • 제10권4호
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    • pp.309-317
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    • 2000
  • Langasite is a promising new piezoelectric material for SAW filter application. Little was known until recently about the methods needed to mechanically polish and chemically polish/etch this material. In this experiment, polishing, slurry chemistry and chemical wet etching for langasite is described. Conventional quartz and LN ($LiNbO_3$) polishing methods did not produce satisfactory polished surfaces, and polishing with a colloidal silica slurries has shown to be most effective. The optimum condition was investigated by changing the slurry chemistry. As the planarization effect is very important in SAW filter applications, the examination of the effective particle number effect and the particle size effect was carried out. Z-cut langasite surface which had been polished with the colloidal silica slurries was etched in a variety of etchants. Conventional quartz etchants destroyed the polished surface. Other etchants formed a thin film on the surfaces. In this experiment, the reaction between langasite and a few etching solution was analysed. And an appropriate selective etchant solution for analyzing the defects was synthesized.

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TSSG법에 의해 육성한 KLN 단결정의 광학적 성질 (Optical properties of potassium lithium niobate single crystal grown by TSSG method)

  • ;윤대호
    • 한국결정성장학회지
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    • 제5권1호
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    • pp.19-24
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    • 1995
  • 대형 단결정 육성을 위해 TSSG 법에 의해 결정성장을 시도, $8{\times}6{\times}2 mm^3$ 크기의 KLN 결정을 육성하였다. 육성된 결정으로 부터 제2고주파 발생영역에서의 이상광 굴절률 $n_e$는 조성에 따라 변화하며, 조성중의 Li량이 많을수록 감소함을 알았다. 또한 광투과 특성평가에 의해 자외영역으로 부터 적외영역에 걸쳐 광이 투과함을 관측하였으며, 자의영역에서의 투과 한도는 350nm, cut-off파장은 380nm임이 확인되었다.

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Synthesis and Structure of Sr6Ge5N2 and Ba6Ge5N2

  • Park, Dong-Gon;Gal, Zoltan A.;DiSalvo, Francis J.
    • Bulletin of the Korean Chemical Society
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    • 제26권10호
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    • pp.1543-1548
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    • 2005
  • Two isostructural new alkaline earth germanium nitrides, $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, were obtained as single crystals from constituent elements in molten Na. They both crystallize in space group $P_{mmn}$ (No. 59) with a = 4.0007(8), b = 17.954(3), c = 9.089(2) $\AA$, Z = 2, and a = 4.1620(2), b = 18.841(1), c = 9.6116(5) $\AA$, Z = 2, for $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, respectively. Their crystal structure contains features for both Zintl and nitride phases: zigzag anionic chain of $_{\infty}Ge^{2-}$, and dumbbell-shaped bent anion of ${GeN_2}^{4-}$. Counter cations of Sr or Ba wrap these anionic units in a channel-like arrangement. Unlike in other germanium nitrides, bond lengths of both Ge-N arms of the ${GeN_2}^{4-}$, are same in $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$.

Research of reducing thermal stress generated in MGC turbine nozzles

  • Fujimoto, Syuu
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.385-390
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    • 2004
  • An unique ceramic material produced through unidirectional solidification with eutectic composition of two-phase oxides was introduced recently. This composite material has the microstructure of coupled networks of two single crystals interpenetrate each other without grain boundaries. Depending on this microstructure this material, called Melt Growth Composite (MGC), can sustain its room temperature strength up to 1$700^{\circ}C$ (near its melting point) and offer strong oxidization-resistant ability, making its characteristics quite ideal for the gas turbine application. The research project on MGC started in 2001 with the objective of establishing component technologies for MGC application to the high temperature components of the gas turbine engine. MGC turbine nozzles are expected to improve efficiency of gas turbine. However, reduction of the thermal stress is required since high thermal stress is easily generated in MGC turbine nozzles due to temperature distribution. Firstly, the hollow nozzle shape was optimized to reduce thermal stress using numerical analysis. From the results of the first hot gas flow tests, the thermal stress due to span-wise temperature distribution was required to be reduced, and separated nozzle to three pieces was designed. This was tested in hot gas flow at 140$0^{\circ}C$ level, and temperature distributions on the nozzle surface were obtained and stress field was evaluated.

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단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성 (High-Density Quantum Nanostructure for Single Mode Distributed Feedback Semiconductor Lasers by One-Step Growth)

  • 손창식;백종협;김성일;박용주;김용태;최훈상;최인훈
    • 한국재료학회지
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    • 제13권8호
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    • pp.485-490
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    • 2003
  • We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

Electrically Controllable Fiber Bragg Gratings with Liquid Crystal Cladding

  • Baek Seungin;Roh Sookyoung;Na Jun-Hee;Kwon Jaejoong;Yoon Ilyong;Chung Seunghwan;Jeong Cherlhyun;Lee Sin-Doo;Lee Byoungho;Jeong Yoonchan
    • Journal of the Optical Society of Korea
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    • 제9권3호
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    • pp.123-128
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    • 2005
  • An electrically controllable fiber Bragg grating inscribed in a hydrogen-loaded standard single-mode fiber with liquid-crystal cladding is presented. Control of the optic axis of liquid crystals by means of external electric fields results in the change of reflectivity and Bragg wavelength of the grating. The increase of surrounding refractive index of a fiber makes effective refractive index of a propagation mode higher, which results in high field confinement and longer Bragg wavelength. The reduction of the fiber diameter by chemical etching process improves the long-range ordering of liquid-crystal molecules and reduces controlling voltage. The tunable ranges of reflectivity and Bragg wavelength of the liquid crystal-cladding fiber Bragg grating were $\~4.6dB\;and\;\~0.3nm$, respectively.