• 한국초전도학회:학술대회논문집
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• v.9
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• pp.206-209
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• 1999

Magnetic and superconducting properties in a series of intermetallic compounds Y$_{1-x}Tb_xNi_2B_2C$ were investigated by measuring the temperature dependent magnetization, M (T), and resitivity, ${\rho}$ (T). As Tb concentration, x, is increased, the superconducting transition temperature, T$_c$, decreases and eventually disappears in the vicinity of x = 0.5 while Neel temperature, T$_N$, appears abruptly near x = 0.4 and increases linearly. Of particular interest is the collision of superconductivity and antiferromagnetism around x = 0.4. The linear decrease of T$_c$ for dilute Tb concentration seems to follow the Abrikosov-Gor'kov behavior, while the decay of T$_c$ below T$_c$ is expected to originate from the effective magnetic field on the conduction electrons. The Ginzburg-Landau theory was phenomenologically constructed to explain this competition of superconducting order parameter and antiferromagnetic order parameter with the multi-band model.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.349-352
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• 2006

The plastic deformation of polycrystalline materials is induced by changes of the microstructure when the loading is beyond the critical state of stress. Constitutive models for the crystal plasticity have the common objective which relates microscopic single crystals in the crystallographic texture to the macroscopic continuum point. In this paper, a new consistent tangent stiffness for the anisotropic elasto-viscoplastic analysis of polycrystalline deformation is developed, which can be used in the finite element analysis for the slip-dominated large deformation of polycrystalline materials. In order to calculate the consistent tangent stiffness, the state function is defined based on the consistency condition between the elastic and plastic stress. The rate of shearing increment($\Delta{\gamma}^{\alpha}$) is calculated with satisfying the consistency condition. The consistency condition becomes zero when the trial resolved shear stress($\tau^{{\alpha}^*}$) becomes resolved shear stress($\tau^{\alpha}$) at every step. Iterative method is utilized to calculate the rate of shearing increment based on the implicit backward Euler method. The consistent tangent stiffness can be formulated by differentiating the rate of shearing increment with total strain increment after the instant rate of shearing increment converges. The proposed tangent stiffness is applied to the ABAQUS/Standard by implementing in the ABAQUS/UMAT.

• Journal of Information Display
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• v.11 no.4
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• pp.135-139
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• 2010

A series of Sr-Si-S compounds was synthesized using an advanced chemical method in which the use of one solution-based process uniformly dispersed the $Eu^{2+}$ activators in the host crystals, to find new compositions that would suit phosphor applications. Particular focus was given to the Si-rich region. This led to the synthesis of a single-phase compound that showed an unknown X-ray diffraction pattern. This compound had a composition close to that of $SrSi_2S_5$. When this compound is activated with $Eu^{2+}$ ($SrSi_2S_5:Eu^{2+}$), it shows a cyan-blue emission with a main luminescence peak at 495 nm. This emission is excited by wavelengths of 250-440 nm and has a maximum excitation at 350 nm.

• Ceramist
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• v.23 no.1
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• pp.101-109
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• 2020

In this study, the phase transition behaviors of lead-free (Na_1/2Bi_1/2TiO₃)_(1-x)-(BaTiO₃)_x (NBT-BT) are investigated by using Brillouin spectroscopy. The elastic properties, sound velocity and absorption coefficient of NBT-BT are characterized as a function of temperature along different crystallographic axes. The temperature dependences of the elastic constants of NBT-BT near the morphotropic phase boundary are determined for the first time. The unpoled NBT-BT single crystals exhibits the typical relaxor behaviors, presenting broad acoustic and dielectric anomalies. The application of electric field induced discontinuous changes in the elastic properties at ~110℃, which indicates field-induced phase transition occurred. The electric field also changes the dielectric constant from more relaxor-like to ferroelectric-like dielectric behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• Progress in Medical Physics
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• v.4 no.1
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• pp.41-53
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• 1993

The electron spin resonanec of sigle crystals of L-alanine have been observed at T=300K, 100K and analyzed for different orieantations of the crystal in the magnetic field and at microwave frequency X-band. The stable free radical profuced by the irradiation is proved to be of the form CH$_3$CHR, where R is a group which has no nuclei with detectable coupling A notable dependence on temperature of the absorption was observed in the range from 1100K to 2l0K. It was concluded that the reorietation of the methy group of the radical H$_3$CCHR is quenched at low temperature.

• ETRI Journal
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• v.11 no.4
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• pp.84-97
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• 1989

The influence of Zn, Si and Te diffusion on the interdiffusion in $GaAs-Ga_1_-xIN_xAs_1__yP_y$and InP$Ga_1__xIn_xAs_1__yP_y$ heterostructures was studied. The heterostructures were grown by liquid phase epitaxy, and the impurity diffusion into the heterostructures was carried out using metal compound or element sources. The extent of interdiffusion for both group III and V atoms was observed by depth profiling of matrix elements with secondary ion mass spectrometry and Auger electron spectroscopy. Selective enhancement of cation interdiffusion was observed by the concurrent Zn diffusion in both the GaAs based-and InP based-crystals. In contrast to the Zn diffusion, the Si diffusion in the GaAs based-crystal and the Te diffusion in the InP based-crystal enhanced both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion due to Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si and Te.

• Archives of Pharmacal Research
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• v.15 no.1
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• pp.52-57
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• 1992

The molecular structure of a natural compound was determined by single crystal X-ray diffraction analysis. The compound was isolated by methanol extraction and repeated chromatography from the stem of Paulownia tomentosa. Yellow prismatic crystals of the compound, which were recrystallized from tetrahydrofuran, are triclinic, with a = 7.310 (6), b = 10.753(6), c = 11.586(5) ${\AA}.\;\alpha= 93.30(6),\;\beta=105.62(10),\;\gamma=109.49(7)^\circ,\;D_x=1.514,\;D_m=1.51 g/cm^3$, space group P1 and Z = 2. The structure was solved by direct method, and refined by least-squares procedure to the final R-value of 0.032 for 1271 independent reflections $(F\le3\sigma{(F))}$. The compound is one of new furanquinone analogue. The molecule has a nearly planar conformation with an intramolecular hydrogen bond. In the crystal, the planar molecules are arranged as a prallel sheet-like pattern, and these stackings are stabilized by the O-H...O type intermolecular hydrogen bonds. The other intermolecular contacts appear to be the normal van der Waals interactions.

• Transactions of Materials Processing
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• v.23 no.4
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• pp.231-237
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• 2014

In the current study, a rate-dependent crystal plasticity finite element method (CPFEM) was used to simulate flow stress behavior and texture evolution of a body-centered cubic (BCC) crystalline material during plastic deformation at room temperature. To account for crystallographic slip and rotation, a rate-dependent crystal constitutive law with a hardening model was incorporated into an in-house finite element program, CAMPform3D. Microstructural heterogeneity and anisotropy were handled by assigning a crystallographic orientation to each integration point of the element and determining the stiffness matrix of the individual crystal. Uniaxial tensile tests of single crystals with different crystallographic orientations were simulated to determine the material parameters in the hardening model. The texture evolution during four different deformation modes - uniaxial tension, uniaxial compression, channel die compression, and simple shear deformation - was investigated based on the comparison with experimental data available in the literature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.215-222
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• 2009

Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.