• Title/Summary/Keyword: Single crystals

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Mössbauer Studies of the Magnetic Properties in Ba-ferrite Single Crystal (Ba-Ferrite 단결정의 자기적 특성에 관한 뫼스바우어 분광학적 연구)

  • Sur, J.C.;Gee, S.H.;Hong, Y.K.
    • Journal of the Korean Magnetics Society
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    • v.17 no.2
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    • pp.60-64
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    • 2007
  • Ba-Ferrite single crystals were prepared and characterized by X-ray, SEM and Mossbauer spectroscopy. The single crystal layers was cut in the c-axis and radiated to the surface by ${\gamma}-rays$ for Mossbauer spectroscopy. We found out that the spin states in Fe atoms were parallel to the ${\gamma}-rays$ direction. The temperature dependence of the hyperfine field is almost similar to that of powder samples. The crystal structure is a Magnetoplumbite without any other phases and the lattice parameters are found out with $a_0=5.892{\AA},\;b_0=5.892{\AA},\;c_0=23.198{\AA}$. $M\"{o}ssbauer$ spectrum in single crystal have 5 sets off absorption lines in each Fe site when the ${\gamma}-rays$ have the same radiation direction with the c-axis in the crystal, which mean that the whole crystal bulk formed only one crystal and same spin direction. The hysteresis curve shows the saturation moment and coercive force of 70.71 emu/g and 320 Oe respectively.

The crystal growth and physical properties of the single crystal $K_2CoCl_4$ ($K_2CoCl_4$ 단결정의 성장과 물리적 성질)

  • 김용근;안호영;정희태;정세영
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.3
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    • pp.359-365
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    • 1997
  • $K_2CoCl_4$, single crystals were grown by the Czochralski method in Ar atmosphere. The thermal hysteresis of the dielectric constant at $T_c$ was investigated. $K_2CoCl_4$ crystal shows ionic hopping mechanism due to $K^+$ ion and the activation energy is nearly 0.62 eV. Thermal expansions along a-, b-, and c-axis of $K_2CoCl_4$, were measured on heating and the thermal expansion coefficients in each phase were calculated. From the result of the optical absorption measurement, we interpreted the absorption peak as transition energy between the splitted energy levels of the Co ion in the crystal field and it showed the possibility of the application to the optical band filter between 800 nm and 1200 nm.

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Magnetic Anisotropy in High $T_c\;Y_1Ba_2Cu_3O_{7-y}$ Superconductor (고온초전도체 $Y_1Ba_2Cu_3O_{7-y}$의 자기이방성)

  • Kim, Mun-Seok;Yu, Seong-Cho;Im, U-Yeong;Baek, Jong-Seong
    • Journal of the Korean Magnetics Society
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    • v.2 no.3
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    • pp.228-232
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    • 1992
  • Magnetic properties of grain aligned high $T_c\;Y_1Ba_2Cu_3O_{7-y}$ superconductor are inverstigated. Grain-aligned superconductors have magnetic anisotropy in the Cu-O layer like single crystals. The lower critical field $H_{c1},$ measured at the temperature range of 2 K up to 77 K, is found to be decreasing linearly as temperature goes up. Moreover, it decreaes more rapidly when the Cu-O layer is perpendicular to the external magnetic field. The temperature dependence of the magnetic susceptibility shows that the value of magnetic susceptibility, $4{\pi}\;X,$ is close to -1 at low temperature. The intra grain critical current density $J_c,$ obtained from the Bean's critical state model, is found to be comparable to that of single crystal superconductors.

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Astudy of internal defects and their effects in $CaF_2$ single crystals (형석단결정의 내부결함 및 그 영향에 관한 연구)

  • Seo, Soo-Hyung;Joo, Kyoung;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.419-423
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    • 1998
  • The internal defects in $(CaF_2)$ single crystal were characterized by the observation of optical microscopy, the element analysis and the transmittance analysis. In bubble and negative crystal which are composed to crystal plane of (100) and (111), the spread negative crystal in $(CaF_2)$ crystal gave an effect of low transmittance. The precipitates formed in bubble as internal cavities were analyzed by using WDX. Violet colored-crystal had higher a dislocation density than non-colored crystal, and the atomic ratio between Ca and F changed by poor F ion. In this result, we could determine indirectly that violet color was occurred by poor F ion.

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$CaF_2$ single crystals growth for UV grade by vacuum-Bridgman method (Vacuum-Bridgman법에 의한 UV grade 형석$(CaF_2)$단결정 성장)

  • Seo, Soo-Hyung;Joo, Kyoung;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.383-387
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    • 1998
  • The vacuum-Bridgman equipment for large size diameter (4 inch more over) crystal growth was organized simply and the $CaF_2$ single crystal which was grown in the conditions of growth rate of 2mm/hr, freezing temperature gradient of $12^{\circ}C$/cm, have analyzed to keep excellent properties. Using Mo thermal reflector of umbrella shape, it could be eliminated the formation of polycrystalline. The preferential growth direction was (111) and the calculated lattice parameter was $5.460 \AA$ by XRD peaks. The secondary phases, also, was not formed by means of powder-XRD analysis. The value of EPD is $1.4{\times}10^4 \textrm{cm}^{-2}$ and the optical quality, which is the transmittance is 91% up in UV region, is suitable for optical components of UV applications.

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The $PbWO_{4}:Nb$ single crystal growth and its optical properties ($PbWO_{4}:Nb$ 단결정의 성장과 그 광학적 특성)

  • 장경동;김도형;양희선;이상걸;박효열;이진호;이동욱;이상윤
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.141-148
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    • 1999
  • High quality pure and Nb-doped $PbWO_{4}$ Single Crystal were grown from a 50 %~50 % mixture of Lead oxide (PbO) and Tungsten oxide $(WO_{3})$ by Czochralski method in Iridium crucible. The stoichiometric deviation correspond to the selective loss of the crystal constituents is found to be responsible for the yellowish coloration of $PbWO_{4}$. Through the X-ray powder diffraction experiment, we have investigated the lattice constant variations of each $PbWO_{4}$ crystals. We also present information on their photoluminescence (PL), optical absoption properties and Raman spectra. The temperature dependence of PL intensity and FWHM (Full Width Half Maximum) were measured in the temperature range 10 K~300 K. One observes a slight temperature dependence in the low temperature region and PL intensity decreases over 200 K by thermal quenching. The activation energy, Huang-Rhys coupling constant and inhomogenious brodenning acquired from their temperature dependence.

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A study on the lattice defects in $LiNbO_3$ single crystal by crystal by $OH^-$ absorption band ($OH^-$ 흡수밴드에 의한 $LiNbO_3$ 단결정의 격자결함에 관한 연구)

  • 조용석;강길영;윤종규
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.401-406
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    • 1998
  • For the applications in optical waveguides and devices, LiNbO_3$ single crystals need to overcome the weakness of optical damage due to the inhomogeneities of laser-induced refractive index. This problem can be solved by doping of Mg in LiNbO_3$ and proton exchange of LiNbO_3$. In this study, to understand the mechanism of optical damage resistance in LiNbO_3$, the changes of lattice defects in LiNbO_3$ caused by MgO doping and acid treatment were observed indirectly by $OH^-$ absorption bands using a FT-IR spectrophotometer. The effect of lattice defects on temperature, heat-treatment and polishing were also investigated. It is shown that MgO doping increases optical damage resistance by generating the defects of $Mg_{Nb}^{2+}$ in the lattice of LiNbO_3$, and that proton exchange by implantation of $H^+$ ion in the hexagonally closest packed oxygen layers on the surface of LiNbO_3$, makes lattice defects, which diffuse into the crystal after heat-treatment above $400^{\circ}C$.

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Control of carrier concentrations by addition of $B_{2}O_{3}$ in Si-doped vertical gradient freeze (VGF) GaAs single crystal growth (수직경사응고(VGF)법에 의한 Si 도핑 GaAs 단결정 성장시 $B_{2}O_{3}$ 첨가에 따른 캐리어 농도 변화)

  • Bae, So-Ik;Han, Chang-Woon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.2
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    • pp.75-78
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    • 2009
  • Si-doped GaAs single crystals were grown by vertical gradient freeze using PBN crucibles. The amount of oxide layer $B_{2}O_{3}$ in PBN crucible was changed($0{\sim}0.2wt%$) and measured the concentration of carriers. The segregation coefficients of Si in GaAs melt decreased rapidly from initial 0.1 to 0.01 as the amount of $B_{2}O_{3}$ increases. At the same time, concentration of carriers was shown to decrease. It is likely that the reaction between dopant Si and $B_{2}O_{3}$ in GaAs melt results in the reduction of Si dopants(donor) while increase in the amount of boron(acceptor). The thin layer of $B_{2}O_{3}$ glass in PBN crucible was proved to be a better way to reduce defect formation rather than the total amount of $B_{2}O_{3}$.

Importance of convection during physical vapor transport of Hg2Cl2 in the presence of Kr under environments of high gravitational accelerations

  • Kim, Geug-Tae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.29-35
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    • 2012
  • Special attention in the role of convection in vapor crystal growth has been paid since some single crystals under high gravity acceleration of $10g_0$ appear considerably larger than those under normal gravity acceleration ($1g_0$). With increasing the gravity acceleration from $1g_0$ up to $10g_0$, the total molar flux for ${\Delta}T$ = 30 K increases by a factor of 4, while for ${\Delta}T$ = 90, by a factor of 3. The maximum molar fluxes for three different gravity levels of $1g_0$, $4g_0$ and $10g_0$, appear approximately in the neighborhood of y = 0.5 cm, and the molar fluxes show asymmetrical patterns, which indicate the occurrence of either one single or more than one convective cell. As the gravitational level is enhanced form $1g_0$ up to $10g_0$, the intensity of convection is increased significantly through the maximum molar fluxes for ${\Delta}T$ = 30 K and 90 K. At $10g_0$, the maximum total molar flux is nearly invariant for for ${\Delta}T$ = 30 K and 90 K. The total molar flux increases with increasing the gravity acceleration, for $1g_0{\leq}g_y{\leq}10g_0$, and decreases with increasing the partial pressure of component B, a noble gas called as Kr (Krypton), $P_B$. The ${{\mid}U{\mid}}_{max}$ is directly proportional to the gravity acceleration for 20 Torr $P_B{\leq}300$ Torr. As the partial pressure of $P_B$ (Torr) decreases from 300 Torr to 20 Torr, the slopes of the ${{\mid}U{\mid}}_{max}s$ versus the gravity accelerations increase from 0.29 sec to 0.54 sec, i.e. by a factor of 2. The total molar flux of $Hg_2Cl_2$ is first order exponentially decayed with increasing the partial pressure of component B, $P_B$ (Torr) from 20 Torr up to 300 Torr.

A Transflective Liquid Crystal Display Driven by the Fringe Field Using a Liquid Crystal with a Negative Dielectric Anisotropy

  • Kim, Jin-Ho;Her, Jung-Hwa;Lim, Young-Jin;Kumar, Pankaj;Lee, Seung-Hee;Park, Kyoung-Ho;Lee, Joun-Ho;Kim, Byeong-Koo
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.3
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    • pp.134-137
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    • 2010
  • We have proposed a transflective liquid crystal display (LCD) driven by the fringe field using a liquid crystal (LC) with a negative dielectric anisotropy. The device used different twist angles of the liquid crystals (LC) in the transmissive (T) and the reflective (R) regions when voltage is applied. With the optimization of the pixel electrode width and the distance between them, the LC directors in the R- and T-regions can be rotated by about $22.5^{\circ}$ and $45^{\circ}$ on an average, respectively. As a result, a high image quality transflective LCD with a single gap, a single gamma, and a wide viewing angle characteristics in both the R- and T- regions can be realized.