• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.3-26
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• 1999

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.711-714
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• 2002

The Ce, Mn: $LiTaO_3$ crystals were grown by Czochralski method in congruent ${\varphi}$3＂ $LiTaO_3$ single crystal growing conditions. Concentrations of Ce and Mn in melt were respectively 0.1 mole%. As-grown crystals were red, transparent and the grown crystals were tested with oxidation/reduction treatment for clor and other properties. Influence of Ce and Mn dopants on $LiTaO_3$ crystal properties was discussed. And the nonlinear optical properties of the Ce, Mn: $LiTaO_3$ crystal are being studied.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.470-474
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• 1999

We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.179-181
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• 1997

When grown the oxide single crystal including Li-ion, optimum oxygen condition is needed. Color and crack are caused in single crystal according too the change in the condition of the oxygen. LiTaO₃ crystals grown from off-composition of congruent melt composition under oxygen deficieny condition didn't generate any crack. LiNbO₃. LiTaO₃ crystals grown from congruent melt composition under optimum oxygen condition caused pale yellow color or colorless with no crack. Color gradually became colorless and generated cracks according to Oxygen excess.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.623-628
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• 2014

Orthorhombic $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.83, piezoelectric charge constant ($d_{33}$) of about 400 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 50 [${\times}10^{-3}Vm/N$]. The transition temperature ($T_{OT}$) of the (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals between orthorhombic and tetragonal phases is also observed to be about $61^{\circ}C$. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($g_{33}$) are higher than those of soft PZT ceramics, it is expected that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.152-158
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• 1996

Optical absorption and photoconductivity spectra of undoped and Co-doped Cd$_{4}$GeSe$_{6}$ single crystals, grown by the chemical transport reaction using iodine as a transporting agent, were investigated. At 20K, the optical energy gaps of the single crystals are 1.934eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$. The photoconductivity spectra of these single crystals were closely investigated over the temperature range 20-290K. At 20K, the photoconductivity peaks were located at 1.797eV, 1.347eV for Cd$_{4}$GeSe$_{6}$ and 1.815eV, I,.57eV, 1.46eV and 1.38eV for Cd$_{4}$GeSe$_{6}$ :Co$^{2+}$, respectively.ely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.693-699
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• 1998

In this work $Cd_4GeS_6:Co^{2+}$(0.5mole%) single crystals were grown by the chemical transporting reactiov(CTR) method using high purity(6N) elements. The grown single crystals crystallized in a monoclinic structure(space group Cc). The direct optical energy gap of this single crystals was found to be 2.445eV at 300K and the temperature dependence of optical energy gap was fitted well to Varshni equation. But at temperatures lower than 70K an anomalous temperature dependence of the optical energy gap was obtained. This anomalous temperature dependence accored well with the anomalous temperature dependence of the unit cell volume. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gaps.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.784-788
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• 2000

The Vickers microhardness was measured on the basal (0001) plane of sapphire single crystals in the temperature range from 25$^{\circ}C$to 1000$^{\circ}C$. The substructure surrounding the indents was investigated using selective chemical polishing and etching, optical microscopy, and trasmission electron microscopy (TEM). At room temperature, cracks were predominant, and at intermediate temperatures (400$^{\circ}C$and 600$^{\circ}C$), extensive rhombohedral twinning was observed. On the other hand, at higher temperatures, prism plane slip bands on prism plane {1120}(원문참조) were dominant in the microstructure. TEM observations revealed that the dislocation substructure at the vicinity of the indents consisted of fairly straight dislocations lying in basal and/or prism planes and aligned along the <1100> and <1120> directions. The details of the glide dissociation of perfect <110> screw dislocations into three collinear 1/3<1100> partials on the prism plane and the Peierls potential for sapphire single crystals were discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.519-521
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• 1996

Emerald (3BeO.Al2O3.6SiO2 : Cr3+) single crystals were crystals were grown by reflux method of temperature gradient in the flux solution of Li2O-MoO3-V2O5 system. The composition of flux materials were 3 mole ratio of MoO3-V2O5/Li2O, subtituted 0.2 mole% of K2O, Na2O, Nb2O5 etc to Li2O content, solved 10-15% of beryl to flux quantity and doped 1% of Cr2O3 to emerald amount. Those of mixing were melted at 110$0^{\circ}C$ in Pt containers of the 3 zone furnace of melt-growth-return to circulate continniously, specially it has been grown large emerald single crystal when thermal fluctuation was treated for 2hrs of once time a day at 1050-95$0^{\circ}C$ in growth zone, substitutional solid solution effect of Cr+3 ion for Al+3 to the growth of emerald single crystal was good. Emerald single crystals were c(0001) hexagonal crystal face of preferencial growth direction and m(1010) post side. When it had been durated for 5 months emerald single crystals of the firet size of 0.6mm thickness of seed crystal were grown 32$\times$65mm(c x m) of maximum size and 6.2mm thickness.