• 한국결정성장학회지
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• 제11권5호
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• pp.203-206
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• 2001

The applicability of shaped growth of yttrium orthovanadate was approved by successful growth of rod-like single crystals with the rectangular shape. Nd-doped single crystals with content of $Nd^{3+}$ ions of 1,2,3,5 atomic % in the starting melt were grown by the EFG technique with the size up to $10^{*}10mm$ in section and up to 85 mm in length. For the testing of the multiple growth of the orthovanadates, two and three Nd-and Yb-doped $YVO_{4}$ single crystals were grown by the EFG technique simultaneously up to 110 mm in length.

• 한국결정성장학회지
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• 제13권5호
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.

• 전기학회논문지P
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• 제51권3호
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• pp.137-141
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.157-160
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• 2008

Improved properties of second electron emission was evaluated by assemble of 4 inch PDP panel. MgO protection layers were deposited and examined by using both pellets made of extremely pure MgO single crystals and sintered pellets using MgO nano powders. $\gamma$ coefficients higher than 0.11 were obtained from the panel by adopting dopant-controlled MgO single crystals. Especially the MgO layer deposited by sintered pellets made of nano powders showed the higher $\gamma$ coefficients at the operating voltage above 200 volts.

• 한국결정성장학회지
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• 제4권2호
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• pp.111-118
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• 1994

Crystal growth chamber 상부에 있는 reservoir에서 polycrystalline silicon powder를 연속적으로 feeding하면서 도가니 하부에 용융대를 형성시키고 seed를 meed를 dipping하여 회전시키면서 하부로 끌어내려 단결정을 성장시키는 연속성장법의 기본 원리를 확립하였고, 직접 고안 설계 제작한 연속성장 장치로 silicon 단결정을 성장시켰다. 본 연속성장법은 melt에 미치는 중력, 진동, melt의 표면장력, melt와 solid의 계면 장력, seed의 회전에 따른 원심력 등의 힘들이서로 상쇄되고 power, feeding양과 성장속도가 비례하여 적당한 조합을 이룰 때 안정한 연속성장을 할 수있다.

• 한국진공학회지
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• 제6권1호
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• pp.50-60
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• 1997

순수한 $ZnAl_2S_4,;ZnAl_2Se_4,;CdAl_2S_4,;and;CdAl_2Se_4$ 및 cobalt와 erbium을 불순물로 첨가 한 이들 단결정을 화학수송법으로 성장시켰다. 성장된 단결정의 결정구조, 격자상수, 광학적 energy gap, photoluminescence 특성 등을 측정하여 광학적 전이 기구를 규명하였다.

• 한국세라믹학회지
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• 제23권4호
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• pp.69-77
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• 1986

Single crystals of zinc tungstates were grown by the Czochralski method. To obtain the seed crystals various methods were employed including 4 points platinum wirse which dipped the melt and the capillary action from the melt led the 3 differently oriented seeds such as [100], [010] and [001] directions. Optimum growing conditions were observed as neck diameter 2mm rotation speed 50-60 rpm maximum diameter 15mm and pulling rate 0-10 mm/hr. Dendrites covered on the olidified surface in a platinum crucible were turned out to be [001] direction because obviously this crystal has the strong [001] preferential growth habit. The (100) and (010) planes of single crystals showed the slip planes and the (010) plane showed the perfect cleavage surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.126-129
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• 1999

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.251-254
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• 1999

A new multi-seeding process for the growth of YBa$_2$Cu$_3$Oxx single crystals was developed. This process introduces an additional heating step to peritectic temperature and a subsequent slow cooling step to the growth temperature following the point when the crystals contacted. The crystal growth was resumed thereafter. The results obtained with this new process were compared with those of the conventional growth process, in which materials were only kept at the growth temperature. It was observed that the liquid phase between crystals were almost completely eliminated, but that Y2ll grains were grown during this new process. There was no significant improvement in trapped magnetic field over the conventional process, which is believed to be due to the cracks generated during the oxygen heat treatment or to the growth of YBa$_2$Cu$_3$Ox grains.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.272-279
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• 2003

In this work Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystals were grown by the chemical transport reaction method in which the iodine was used as the transporting agent. The Zn$_4$GeSe$_{6}$ :CO$^{2+}$ single crystal was found to have a monoclinic structure. The optical absorption spectra of grown crystals were investigated using a temperature-controlled UV-VIS -NIR spectrophotometer. The temperature dependence of band-edge absorption was in a good agreement with the Varshni equation. The observed impurity absorption peaks could be explained as arising from the electron transition between energy levels of Co$^{2+}$ ion sited at the T$_{d}$ symmetry point.