• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.424.1-424.1
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• 2014

Vanadium dioxide (VO2) is a strongly correlated oxide exhibiting a first-order metal-insulator transition (MIT) that is accompanied by a structural phase transition from a low temperature monoclinic phase to a high-temperature rutile phase. VO2 has attracted significant attention because of a variety of possible applications based on its ultrafast MIT. Interestingly, the transition nature of VO2 is significantly affected by stress due to doping and/or interaction with a substrate and/or surface tension as well as defects. Accordingly, there have been considerable efforts to understand the influences of such factors on the phase transition and the fundamental mechanisms behind the MIT behavior. Here, we present the influences of oxygen deficiency, hydrogen doping, and substrate-induced stress on MIT phenomena in single-crystalline VO2 nanobeams. Specifically, the work function and the electrical resistance of the VO2 nanobeams change with the compositional variation due to the oxygen-deficiency-related defects. In addition, the VO2 nanobeams during exposure to hydrogen gas exhibit the reduction of transition temperature and the complex phase inhomogenieties arising from both substrate-induced stress and the formation of the hydrogen doping-induced metallic rutile phase.

• Elastomers and Composites
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• v.52 no.3
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• pp.173-179
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• 2017

Side-chain liquid crystalline polymers having polysiloxane skeletons were synthesized by a thiol-ene reaction, using two kinds of mesogenic groups: a cholesteryl group for induction into a cholesteric liquid crystal phase and a triazomesogenic group for imparting light-sensitivity. All the synthesized polymers were crystalline, except the one with a single cholesteryl group. Crystallinity, glass transition temperature, and melt transition temperature increased with increasing content of the azomesogenic group. The polymer (P-C10A0) with a single cholesteryl group has a cholesteric phase, the one (P-C0A10) with a single azomesogenic group has a smectic phase, and those with both types of mesogenic groups showed both smectic and cholesteric phases. The temperature ranges of the two liquid crystalline phases in the co-polymers were independent of the contents of the two types of mesogenic groups. The rate of photoisomerization of the light-sensitive azobenzene group in the polymer decreased with increasing azobenzene content due to steric hindrance between the azomesogenic groups.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.112-112
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• 2013

Well-defined surfaces of single-crystalline solid materials are starting points of self-organizationof nanostructures and chemical reactions controlled in nanoscale. Although highly ordered atomicarrangement can be obtained on semiconductor surfaces, they can be maintained only in vacuumand not in air or in aqueous environment. Since single-crystalline metal oxide surfaces arechemically stable and no further oxidation occurs, their atomic structures can be utilized fornanofabrication in liquid processes, nanoelectrochemistry and nanobiotechnology. Sapphire is oneof the most stable metal oxides and its crystalline quality is excellent, as can be applied to electronicdevices that require ultralow defect densities. We recently found that chemical phase separationoccurs on sapphire surfaces by annealing processes and the formed nanodomains exhibit specificproperties in air and in water [1,2]. In our experiments, highly selective and controllable adsorptionof various protein molecules is observed on the phase-separated surfaces though the materials andcrystallographic orientations are identical [3,4]. Planar lipid bilayers supported on thephase-separated sapphire surface also exhibit a specific formation site selectivity [5]. Chemicalnanodomains appear on other metal-oxide surfaces, such as well-ordered titania surfaces. Wedemonstrate that surface chemistry of the nanodomains can be characterized in aqueousenvironment using atomic force microscopy equipped with colloidal tips and then show adsorptionand desorption behaviors of various proteins on the phase-separated surfaces.

• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.202-207
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• 2007

High-Quality 1-Dimensional InN single crystalline have been grown by Halide Vapor-Phase Epitaxy on the Au catalyst coated Si substrate using the vapor-liquid-solid growth mechanism. We have been grown 1-dimension InN nanowires having controlled the growth conditions for substrate temperature and gases flow rate. The grown InN nanowire of characteristics for morphologies, crystal structure, and element analysis were carried out by SEM, HR-TEM, and EDS respectively. And the defects of InN crystalline were analyzed by indexing of selective area diffraction pattern with attached HR-TEM. We have successfully obtained the defect-free 1-dimensional InN single crystalline nanowire at the atmosphere pressure.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3571-3574
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• 2011

Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.394-399
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• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

• Progress in Superconductivity
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• v.4 no.1
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.

• Bulletin of the Korean Chemical Society
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• v.20 no.5
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• pp.517-524
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• 1999

By heating the magnesiumsilicate (Mg2SiO4:forsterite) xerogel in carbon dioxide, carbonaceous component was intentionally introduced into the amorphous solid precursor. Carbon was introduced homogeneously as unidentate carbonate. Upon being heated at 800 。C in carbon dioxide, the xerogel which had homogeneously distributed carbonaceous component in it crystallized into a single phase product of a new crystalline material, which had approximate composition of Mg8Si4Ol8C. The powder X-ray diffraction pattern of the new crystalline material did not match with any known crystalline compound registered in the powder diffraction file. Crystallization from amorphous xeroget to the new crystalline phase occurred in a very narrow range of temperature, from 750 。C to 850 。C in carbon dioxide, or in dty oxygen. Upon being heated above 850 。C, carbonaceous component was expelled from the product, accompanied by irreversible transition from the new crystalline material to forsterite.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.219-219
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• 2010

Silicides have been commonly used in the Si technology due to the compatibility with Si. Recently the silicide has been applied in solar cells [1] and nanoscale interconnects [2]. The modulation of Ni silicide phase is an important issue to satisfy the needs. The excellent electric-conductive nickel monosilicide (NiSi) nanowire has proven the low resistive nanoscale interconnects. Otherwise the Ni disilicide (NiSi2) provides a template to grow a crystalline Si film above it by the little lattice mismatch of 0.4% between Si and NiSi2. We present the formation of Ni silicide phases performed by the single deposition and the co-deposition methods. The co-deposition of Ni and Si provides a stable Ni silicide phase at a reduced processing temperature comparing to the single deposition method. It also discusses the Schottky contact formation between the Ni silicide and the grown crystalline Si film for the solar cell application.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.222.2-222.2
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• 2015

A $Ge_2Sb_2Te_5$ nanowire (GST NW) phase change memory device is investigated with Joule heating electrodes. GST is the most promising phase change materials, thus has been studied for decades but atomic structure transition in the phase-change area of single crystalline phase-change material has not been clearly investigated. We fabricated a phase change memory (PCM) device consisting of GST NWs connected with WN electrodes. The GST NW has switching performance with the reset/set resistance ratio above $10^3$. We directly observed the changes in atomic structure between the ordered hexagonal close packed (HCP) structure and disordered amorphous phase of a reset-stop GST NW with cross-sectional STEM analysis. Amorphous areas are detected at the center of NW and side areas adjacent to heating electrodes. Direct imaging of phase change area verified the atomic structure transition from the migration and disordering of Ge and Sb atoms. Even with the repeated phase transitions, periodic arrangement of Te atoms is not significantly changed, thus acting as a template for recrystallization. This result provides a novel understanding on the phase-change mechanism in single crystalline phase-change materials.